Reverse Partial Etching Scheme for Magnetic Device Applications

• US 20130244342A1
• Filed: 03/14/2012
• Published: 09/19/2013
• Est. Priority Date: 03/14/2012
• Status: Active Grant

• Current Assignee: Taiwan Semiconductor Manufacturing Company Limited
• Original Assignee: Headway Technologies Incorporated
• Inventors: WANG, Yu-Jen, CHIN, Yuan-Tung
• Granted Patent: US 8,748,197 B2
• Time in Patent Office: Days
• US Class Current: 438/3
• CPC Class Codes: H10B 61/00 Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices
• CPC Class Codes: H10N 50/01 Manufacture or treatment

Abstract

A magnetic tunnel junction (MTJ) structure is provided over a device wherein the MTJ comprises a tunnel barrier layer between a free layer and a pinned layer; and a top and bottom electrode inside the MTJ structure. A hard mask layer is formed on the top electrode. The hard mask layer, top electrode, free layer, tunnel barrier layer, and pinned layer are patterned to define the magnetic tunnel junction (MTJ) structures. A first dielectric layer is deposited over the MTJ structures and planarized to expose the top electrode. Thereafter, the top electrode and free layer are patterned. A second dielectric layer is deposited over the MTJ structures and planarized to expose the top electrode. A third dielectric layer is deposited over the MTJ structures and a metal line contact is formed through the third dielectric layer to the top electrode to complete fabrication of the magnetic device.

Claims

1. A method of fabricating a magnetic device comprising:

providing a magnetic tunnel junction (MTJ) structure over a device wherein said MTJ comprises a tunnel barrier layer between a free layer and a pinned layer, a top electrode over said free layer, and a bottom electrode under said pinned layer;

forming a hard mask layer on said top electrode;

patterning said hard mask layer, said top electrode, said free layer, said tunnel barrier layer, and said pinned layer to define said magnetic tunnel junction (MTJ) structures;

depositing a first dielectric layer over said MTJ structures and planarizing said first dielectric layer to expose said top electrode;

thereafter patterning said top electrode and said free layer;

thereafter depositing a second dielectric layer over said MTJ structures and planarizing said second dielectric layer to expose said top electrode;

thereafter depositing a third dielectric layer over said MTJ structures; and

forming a metal line contact through said third dielectric layer to said top electrode to complete fabrication of said magnetic device.

2. The method according to claim 1 wherein said magnetic device comprises magnetic random access memory, in-plane or out-of-plane spin-torque-transfer random access memory, spin valve read head or sensor, or other spintronic device.

3. The method according to claim 1, wherein said pinned layer comprises a single layer.

4. The method according to claim 1, wherein said pinned layer comprises multiple synthetic antiferromagnetic layers.

5. The method according to claim 1, wherein said hard mask layer comprises Ta, Ti, TaN, or other hybrid hard mask materials.

6. The method according to claim 1, wherein said tunnel barrier layer comprises MgO or AlO or another tunneling barrier material.

7. The method according to claim 1, wherein said first, second, and third dielectric layer comprise SiO₂, SiN, SiCN, or SiON.

8. The method according to claim 1, wherein said magnetic device has a Hoff of about 500 Oe.

9. A method of fabricating a magnetic device comprising:

providing a bottom electrode in a substrate;

forming a landing pad overlying and contacting said bottom electrode;

sequentially forming on said landing pad a pinned layer, a tunnel barrier layer, and a free layer;

forming a top electrode layer on said free layer;

forming a hard mask layer on said top electrode layer;

patterning said hard mask layer, said top electrode layer, said free layer, said tunnel barrier layer, and said pinned layer to define magnetic tunnel junction (MTJ) structures;

depositing a first dielectric layer over said MTJ structures and planarizing said first dielectric layer to expose said top electrode layer;

thereafter patterning said top electrode layer and said free layer;

thereafter depositing a second dielectric layer over said MTJ structures and planarizing said second dielectric layer to expose said top electrode layer;

depositing a third dielectric layer over said MTJ structures; and

forming a metal line contact through said third dielectric layer to said top electrode to complete fabrication of said magnetic device.

10. The method according to claim 9, wherein said magnetic device comprises magnetic random access memory, in-plane or out-of-plane spin-torque-transfer random access memory, spin value read head or sensor, or other spintronic device.

11. The method according to claim 9, wherein said pinned layer comprises a single layer.

12. The method according to claim 9, wherein said pinned layer comprises multiple synthetic antiferromagnetic layers.

13. The method according to claim 9, wherein said hard mask layer comprises Ta, Ti, TaN, or other hybrid hard mask materials.

14. The method according to claim 9, wherein said tunnel barrier layer comprises MgO or AlO or other tunnel barrier materials.

15. The method according to claim 9, wherein said first, second, and third dielectric layers comprise SiO₂, SiN, SiCN, or SiON.

16. The method according to claim 9, wherein said hard mask layer remains on said top electrode and wherein said metal line contacts said top electrode through said hard mask layer.

17. The method according to claim 9, wherein said magnetic device has a Hoff of about 500 Oe.