SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME

• US 20130244375A1
• Filed: 05/07/2013
• Published: 09/19/2013
• Est. Priority Date: 08/08/2008
• Status: Active Grant

• Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Original Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Inventors: Yamazaki, Shunpei, Miyairi, Hidekazu, Akimoto, Kengo, Shiraishi, Kojiro
• Granted Patent: US 8,900,917 B2
• Time in Patent Office: Days
• US Class Current: 438/104
• CPC Class Codes: H01L 29/66742 Thin film unipolar transistors
• CPC Class Codes: H01L 29/78621 with LDD structure or an extension or an offset region or characterised by the doping profile
• CPC Class Codes: H01L 29/7869 having a semiconductor body comprising an oxide semiconductor material, e.g. zinc oxide, copper aluminium oxide, cadmium stannate

Abstract

An embodiment is to include a staggered (top gate structure) thin film transistor in which an oxide semiconductor film containing In, Ga, and Zn is used as a semiconductor layer and a buffer layer is provided between the semiconductor layer and a source and drain electrode layers. A metal oxide layer having higher carrier concentration than the semiconductor layer is provided intentionally as the buffer layer between the source and drain electrode layers and the semiconductor layer, whereby an ohmic contact is formed.

Claims

1. A method for manufacturing a semiconductor device, comprising the steps of:

forming a first conductive layer and a second conductive layer over a substrate;

forming a first layer over the first conductive layer and a second layer over the second conductive layer;

forming an oxide semiconductor layer over the first layer and the second layer;

forming an insulating layer over the oxide semiconductor layer; and

forming a third conductive layer over the insulating layer,

wherein a carrier concentration of each of the first layer and the second layer is higher than a carrier concentration of the oxide semiconductor layer,

wherein the oxide semiconductor layer and the first conductive layer are electrically connected to each other with the first layer interposed therebetween, and

wherein the oxide semiconductor layer and the second conductive layer are electrically connected to each other with the second layer interposed therebetween.

2. The method for manufacturing a semiconductor device, according to claim 1, wherein the first conductive layer, the second conductive layer, the first layer, the second layer, the oxide semiconductor layer, the insulating layer, and the third conductive layer are formed by a sputtering method.

3. The method for manufacturing a semiconductor device, according to claim 1, wherein the oxide semiconductor layer and the insulating layer are formed in an oxygen atmosphere.

4. The method for manufacturing a semiconductor device, according to claim 1, wherein each of the first layer and the second layer is formed in a rare gas atmosphere.

5. The method for manufacturing a semiconductor device, according to claim 1, wherein each of the first layer and the second layer comprises titanium oxide.

6. The method for manufacturing a semiconductor device, according to claim 1, wherein the oxide semiconductor layer contains indium, gallium, and zinc.

7. The method for manufacturing a semiconductor device, according to claim 1, wherein each of the first layer and the second layer has n-type conductivity.

8. A method for manufacturing a semiconductor device, comprising the steps of:

forming a source electrode layer and a drain electrode layer over a substrate;

forming a first metal oxide layer having n-type conductivity over the source electrode layer and a second metal oxide layer having n-type conductivity over the drain electrode layer;

forming an oxide semiconductor layer over the first metal oxide layer and the second metal oxide layer;

forming a gate insulating layer over the oxide semiconductor layer; and

forming a gate electrode layer over the gate insulating layer,

wherein a carrier concentration of each of the first metal oxide layer and the second metal oxide layer is higher than a carrier concentration of the oxide semiconductor layer,

wherein the oxide semiconductor layer and the source electrode layer are electrically connected to each other with the first metal oxide layer interposed therebetween, and

wherein the oxide semiconductor layer and the drain electrode layer are electrically connected to each other with the second metal oxide layer interposed therebetween.

9. The method for manufacturing a semiconductor device, according to claim 8, wherein the source electrode layer, the drain electrode layer, the first metal oxide layer, the second metal oxide layer, the oxide semiconductor layer, the gate insulating layer, and the gate electrode layer are formed by a sputtering method.

10. The method for manufacturing a semiconductor device, according to claim 8, wherein the oxide semiconductor layer and the gate insulating layer are formed in an oxygen atmosphere.

11. The method for manufacturing a semiconductor device, according to claim 8, wherein each of the first metal oxide layer and the second metal oxide layer is formed in a rare gas atmosphere.

12. The method for manufacturing a semiconductor device, according to claim 8, wherein each of the first metal oxide layer and the second metal oxide layer comprises titanium oxide.

13. The method for manufacturing a semiconductor device, according to claim 8, wherein the oxide semiconductor layer contains indium, gallium, and zinc.

14. A method for manufacturing a semiconductor device, comprising the steps of:

forming a source electrode layer and a drain electrode layer over a substrate;

forming a first metal oxide layer having n-type conductivity over the source electrode layer and a second metal oxide layer having n-type conductivity over the drain electrode layer;

forming an oxide semiconductor layer over the first metal oxide layer and the second metal oxide layer;

forming a gate insulating layer over the oxide semiconductor layer; and

forming a gate electrode layer over the gate insulating layer,

wherein a carrier concentration of each of the first metal oxide layer and the second metal oxide layer is higher than a carrier concentration of the oxide semiconductor layer,

wherein the oxide semiconductor layer and the source electrode layer are electrically connected to each other with the first metal oxide layer interposed therebetween,

wherein the oxide semiconductor layer and the drain electrode layer are electrically connected to each other with the second metal oxide layer interposed therebetween, and

wherein the oxide semiconductor layer, the gate insulating layer, and the gate electrode layer are successively formed without exposure to air.

15. The method for manufacturing a semiconductor device, according to claim 14, wherein the source electrode layer, the drain electrode layer, the first metal oxide layer, the second metal oxide layer, the oxide semiconductor layer, the gate insulating layer, and the gate electrode layer are formed by a sputtering method.

16. The method for manufacturing a semiconductor device, according to claim 14, wherein the oxide semiconductor layer and the gate insulating layer are formed in an oxygen atmosphere.

17. The method for manufacturing a semiconductor device, according to claim 14, wherein each of the first metal oxide layer and the second metal oxide layer is formed in a rare gas atmosphere.

18. The method for manufacturing a semiconductor device, according to claim 14, wherein each of the first metal oxide layer and the second metal oxide layer comprises titanium oxide.

19. The method for manufacturing a semiconductor device, according to claim 14, wherein the oxide semiconductor layer contains indium, gallium, and zinc.