PHOTOVOLTAIC DEVICE

• US 20130247994A1
• Filed: 03/15/2013
• Published: 09/26/2013
• Est. Priority Date: 03/26/2012
• Status: Abandoned Application

• Current Assignee: Kabushiki Kaisha Toyota Chuo Kenkyusho (Toyota Motor Corporation)
• Original Assignee: Kabushiki Kaisha Toyota Chuo Kenkyusho (Toyota Motor Corporation)
• Inventors: IKUNO, Takashi, HASEGAWA, Masaki, TAMURA, Shinichi, FUKANO, Tatsuo, TAJIMA, Shin
• Application Number:
  US13/838,129
• Publication Number:
  US 20130247994A1
• Time in Patent Office: Days
• US Class Current: 136/265
• CPC Class Codes: H01L 21/02472 Oxides
• CPC Class Codes: H01L 21/02474 Sulfides
• CPC Class Codes: H01L 21/02483 Oxide semiconducting materials not being Group 12/16 materials, e.g. ternary compounds
• CPC Class Codes: H01L 21/02485 Other chalcogenide semiconducting materials not being oxides, e.g. ternary compounds
• CPC Class Codes: H01L 21/02554 Oxides
• CPC Class Codes: H01L 21/02565 Oxide semiconducting materials not being Group 12/16 materials, e.g. ternary compounds
• CPC Class Codes: H01L 21/02573 Conductivity type
• CPC Class Codes: H01L 21/02581 Transition metal or rare earth elements
• CPC Class Codes: H01L 21/02614 Transformation of metal, e.g. oxidation, nitridation
• CPC Class Codes: H01L 21/02628 using solutions
• CPC Class Codes: H01L 31/0326 comprising AIBIICIVDVI kesterite compounds, e.g. Cu2ZnSnSe4, Cu2ZnSnS4
• CPC Class Codes: H01L 31/072 the potential barriers being only of the PN heterojunction type
• CPC Class Codes: Y02E 10/542 Dye sensitized solar cells

Abstract

A photovoltaic device includes a light absorbing layer as a p-type semiconductor, a buffer layer, and a window layer. The light absorbing layer, the buffer layer, and the window layer are provided in this order. A film of a sulfide-based compound semiconductor containing Cu, Zn, Sn, and S is used as the light absorbing layer. In addition, the buffer layer includes a material having a composition of Zn_1-xMg_xO (0<x≦0.4), and including a phase having a hexagonal crystal structure as a main component.

Claims

1. A photovoltaic device including a light absorbing layer as a p-type semiconductor, a buffer layer, and a window layer,

wherein the light absorbing layer, the buffer layer, and the window layer are provided in this order,

the light absorbing layer is a film of a sulfide-based compound semiconductor containing Cu, Zn, Sn, and S, and

the buffer layer has a composition of Zn_1-xMg_xO (0<

x≦

0.4), and includes a phase having a hexagonal crystal structure as a main component.

2. The photovoltaic device according to claim 1, wherein x satisfies 0.01≦

x≦

0.20.

3. The photovoltaic device according to claim 1, wherein x satisfies 0.05≦

x≦

0.15.

4. A photovoltaic device including a light absorbing layer as a p-type semiconductor, a buffer layer, and a window layer,

wherein the light absorbing layer, the buffer layer, and the window layer are provided in this order,

the light absorbing layer is a film of a sulfide-based compound semiconductor containing Cu, Zn, Sn, and S, and the buffer layer has a composition of Zn_1-xMg_xO (0<

x<

0.1).