MAGNETIC MEMORY ELEMENT AND NONVOLATILE MEMORY DEVICE

• US 20130249024A1
• Filed: 08/31/2012
• Published: 09/26/2013
• Est. Priority Date: 03/20/2012
• Status: Active Grant

• Current Assignee: Kabushiki Kaisha Toshiba (Toshiba Corporation)
• Original Assignee: Kabushiki Kaisha Toshiba (Toshiba Corporation)
• Inventors: SAIDA, Daisuke, Amano, Minoru, Ito, Junichi
• Granted Patent: US 8,928,055 B2
• Time in Patent Office: Days
• US Class Current: 257/421
• CPC Class Codes: G11C 11/161 details concerning the memory cell structure, e.g. the layers of the ferromagnetic memory cell
• CPC Class Codes: G11C 11/1659 Cell access
• CPC Class Codes: H10B 61/22 of the field-effect transistor [FET] type
• CPC Class Codes: H10N 50/01 Manufacture or treatment
• CPC Class Codes: H10N 50/10 Magnetoresistive devices

Abstract

According to one embodiment, a magnetic memory element includes a stacked body and a conductive shield. The stacked body includes first and second stacked units. The first stacked unit includes first and second ferromagnetic layers and a first nonmagnetic layer. The first ferromagnetic layer has a fixed magnetization in a first direction. A magnetization direction of the second ferromagnetic layer is variable in a second direction. The first nonmagnetic layer is provided between the first and second ferromagnetic layers. The second stacked unit includes a third ferromagnetic layer stacked with the first stacked unit in a stacking direction of the first stacked unit. A magnetization direction of the third ferromagnetic layer is variable in a third direction. The conductive shield is opposed to at least a part of a side surface of the second stacked unit. An electric potential of the conductive shield is controllable.

Claims

1. A magnetic memory element comprising:

a stacked body including;

a first stacked unit including;

a first ferromagnetic layer, a magnetization of the first ferromagnetic layer being fixed in a first direction;

a second ferromagnetic layer, a direction of a magnetization of the second ferromagnetic layer being variable in a second direction; and

a first nonmagnetic layer provided between the first ferromagnetic layer and the second ferromagnetic layer, the first nonmagnetic layer, the first ferromagnetic layer and the second ferromagnetic layer being stacked in a stacking direction; and

a second stacked unit including a third ferromagnetic layer stacked with the first stacked unit in the stacking direction, a direction of a magnetization of the third ferromagnetic layer being variable in a third direction; and

a conductive shield opposed to at least a part of a side surface of the second stacked unit, an electric potential of the conductive shield being controllable.

2. The element according to claim 1, wherein the second stacked unit further includes a second nonmagnetic layer provided between the first stacked unit and the third ferromagnetic layer.

3. The element according to claim 1, wherein the second stacked unit further includes:

a fourth ferromagnetic layer stacked with the third ferromagnetic layer in the stacking direction, a magnetization of the fourth ferromagnetic layer being fixed in a fourth direction; and

a second nonmagnetic layer provided between the third ferromagnetic layer and the fourth ferromagnetic layer.

4. The element according to claim 3, wherein

the first direction has a first component parallel to the stacking direction,

the fourth direction has a second component parallel to the stacking direction, and

a direction of the first component is opposite to a direction of the second component.

5. The element according to claim 3, wherein

the first ferromagnetic layer, the second ferromagnetic layer, and the fourth ferromagnetic layer are perpendicular magnetization films and

the third ferromagnetic layer is an in-plane magnetization film.

6. The element according to claim 1, wherein the shield includes a magnetic substance.

7. The element according to claim 1, wherein

the stacked body further includes a third nonmagnetic layer provided between the first stacked unit and the second stacked unit and

the third nonmagnetic layer includes one metal selected from the group consisting of ruthenium (Ru), tantalum (Ta), tungsten (W), platinum (Pt), palladium (Pd), molybdenum (Mo), niobium (Nb), zirconium (Zr), titanium (Ti), and vanadium (V) or an alloy including at least two metals selected from the group.

8. The element according to claim 1, wherein

the stacked body further includes a third nonmagnetic layer provided between the first stacked unit and the second stacked unit,

the third nonmagnetic layer includes one metal selected from the group consisting of ruthenium (Ru), osmium (Os), and iridium (Ir) or an alloy including at least two metals selected from the group, and

a thickness of the third nonmagnetic layer is not more than 3 nanometers.

9. The element according to claim 7, wherein a circle-equivalent diameter of a cross-sectional shape of the third ferromagnetic layer obtained by cutting along a plane perpendicular to the stacking direction is not more than 35 nanometers and a thickness of the third ferromagnetic layer is not less than 0.5 nanometers and not more than 3.5 nanometers.

10. The element according to claim 1, further comprising a shield interconnection electrically connected to the shield.

11. The element according to claim 10, wherein the shield interconnection is connected to a terminal at a ground potential or a power supply potential.

12. The element according to claim 1, wherein the shield is further opposed to a side surface of the first stacked unit.

13. The element according to claim 1, wherein the shield includes one selected from the group consisting of gold (Au), copper (Cu), chromium (Cr), zinc (Zn), gallium (Ga), niobium (Nb), molybdenum (Mo), ruthenium (Ru), palladium (Pd), silver (Ag), hafnium (Hf), tantalum (Ta), titanium (Ti), tungsten (W), platinum (Pt), bismuth (Bi), vanadium (V), zirconium (Zr), magnesium (Mg), silicon (Si), and aluminum (Al).

14. The element according to claim 1, wherein the shield includes a metal selected from the group consisting of iron (Fe), cobalt (Co), nickel (Ni), manganese (Mn), and chromium (Cr) or an alloy including two or more metals selected from the group.

15. The element according to claim 1, wherein the shield includes an alloy including

at least one metal selected from the group consisting of iron (Fe), cobalt (Co), nickel (Ni), manganese (Mn), and chromium (Cr) and

at least one metal selected from the group consisting of platinum (Pt), palladium (Pd), iridium (Ir), ruthenium (Ru), and rhodium (Rh).

16. The element according to claim 1, wherein the shield includes at least one of a TbFeCo alloy, a GdFeCo alloy, a Co/Pt stacked film, a Co/Pd stacked film, and a Co/Ni stacked film.

17. The element according to claim 1, further comprising an insulative protection layer provided between the side surface and the shield.

18. The element according to claim 17, wherein the protection layer includes an oxide, a nitride, or a fluoride including at least one element selected from the group consisting of aluminum (Al), titanium (Ti), zinc (Zn), zirconium (Zr), tantalum (Ta), cobalt (Co), nickel (Ni), silicon (Si), magnesium (Mg), and iron (Fe).

19. The element according to claim 17, wherein a thickness of the protection layer is not less than a distance in the stacking direction between a center in the stacking direction of the second ferromagnetic layer and a center in the stacking direction of the third ferromagnetic layer.

20. A nonvolatile memory device comprising a plurality of magnetic memory elements,

each of the magnetic memory elements including:

a stacked body including;

a first stacked unit including;

a first ferromagnetic layer, a magnetization of the first ferromagnetic layer being fixed in a first direction;

a second ferromagnetic layer, a direction of a magnetization of the second ferromagnetic layer being variable in a second direction; and

a first nonmagnetic layer provided between the first ferromagnetic layer and the second ferromagnetic layer, the first nonmagnetic layer, the first ferromagnetic layer and the second ferromagnetic layer being stacked in a stacking direction; and

a second stacked unit including a third magnetic layer stacked with the first stacked unit in the stacking direction, a direction of a magnetization of the third magnetic layer being variable in a third direction; and

a conductive shield opposed to at least a part of side surface of the second stacked unit, an electric potential of the conductive shield being controllable,

the shield being disposed between the magnetic memory elements.