MULTI-DIE MEMS PACKAGE

• US 20130250532A1
• Filed: 09/16/2011
• Published: 09/26/2013
• Est. Priority Date: 09/18/2010
• Status: Active Grant

• Current Assignee: Semiconductor Components Industries LLC (ON Semiconductor Corporation)
• Original Assignee: Fairchild Semiconductor Corporation (ON Semiconductor Corporation)
• Inventors: Bryzek, Janusz, Bloomsburgh, John Gardner, Acar, Cenk
• Granted Patent: US 9,095,072 B2
• Time in Patent Office: Days
• US Class Current: 361/760
• CPC Class Codes: B81B 2201/0235 Accelerometers
• CPC Class Codes: B81B 2201/0242 Gyroscopes
• CPC Class Codes: B81B 2201/0264 Pressure sensors
• CPC Class Codes: B81B 2207/07 Interconnects
• CPC Class Codes: B81B 7/008 MEMS characterised by an electronic circuit specially adapted for controlling or driving the same B81B7/0087 takes precedence; arrangements for starting, regulating, braking, or otherwise controlling an actuator H02N; control arrangements or circuits for visual indicators G09G3/00
• CPC Class Codes: B81C 1/0023 Packaging together an electronic processing unit die and a micromechanical structure die MEMS packages B81B7/0032; MEMS packaging processes B81C1/00261
• CPC Class Codes: H01L 2224/131 with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
• CPC Class Codes: H01L 23/481 Internal lead connections, e.g. via connections, feedthrough structures
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/014 Solder alloys
• CPC Class Codes: H01L 2924/1461 MEMS
• CPC Class Codes: H05K 1/18 Printed circuits structurally associated with non-printed electric components H05K1/0201, H05K1/023, H05K1/0243, and H05K1/16 take precedence

Abstract

This document refers to multi-die micromechanical system (MEMS) packages. In an example, a multi-die MEMS package can include a controller integrated circuit (IC) configured to couple to a circuit board, a MEMS IC mounted to a first side of the controller IC, a through silicon via extending through the controller IC between the first side and a second side of the controller IC, the second side opposite the first side, and wherein the MEMS IC is coupled to the through silicon via.

Claims

1. An apparatus comprising:

a controller integrated circuit (IC) configured to couple to a circuit board;

a microelectromechanical system (MEMS) IC mounted to a first side of the controller IC;

a through silicon via extending through the controller IC between the first side and a second side of the controller IC, the second side opposite the first side; and

wherein the MEMS IC is coupled to the through silicon via.

2. The apparatus of claim 1, including a plurality of solder interconnects coupled to the circuit board and the control IC.

3. The apparatus of claim 1, wherein the MEMS IC includes an inertial sensor.

4. The apparatus of claim 3, wherein the inertial sensor includes an inertial sensor having six degrees of freedom.

5. The apparatus of claim 1, wherein the MEMS IC includes:

a device layer having multiple moveable portions and a single anchor, the device layer configured to allow in-plane movement and out-of-plane movement of one or more of the moveable portions, and the single anchor configured to support the multiple moveable portions; and

a cap layer couple to the device layer opposite the controller IC.

6. The apparatus of claim 5, wherein the inertial sensor includes a via layer coupled to the device layer at a perimeter of the device layer and at the anchor, the via layer including electrically isolated regions configured to provide out-of-plane electrodes of the inertial sensor.

7. The apparatus of claim 5, wherein the device layer is coupled directly to the controller IC at a perimeter of the device layer and at the single anchor.

8. The apparatus of claim 1, wherein the controller IC includes an application specific IC (ASIC).

9. The apparatus of claim 1, including a high voltage controller IC configured to supply voltage to drive the MEMS IC into resonance.

10. The apparatus of claim 9, wherein the high voltage controller IC is mounted to the controller IC.

11. The apparatus of claim 9, wherein the controller IC includes a first application specific IC (ASIC);

and

wherein the high voltage controller IC includes a second ASIC.

12. An apparatus comprising:

a microelectromechanical system (MEMS) integrated circuit (IC), the MEMS IC including;

a device layer having a plurality of gaps, the plurality of gaps forming multiple moveable portions and a single anchor, the single anchor configured to support the multiple moveable portions; and

a cap layer coupled to the device layer and configured to maintain a vacuum about the multiple moveable portions and to limit out-of-plane movement of the multiple moveable portions; and

a controller IC having a first side coupled to the MEMS IC, the controller IC including a through silicon via extending through the controller IC from the first side to a second side of the controller IC, the through silicon via configured to electrically couple contacts located the first side of the controller IC with contacts located on the second side of the controller IC.

13. The apparatus of claim 12, wherein the MEMS IC includes a via wafer coupled to the device layer opposite the cap layer, the via layer configured to electrically couple the device layer and the controller IC.

14. The apparatus of claim 12, wherein the controller IC is directly coupled to the device layer at a perimeter of the device layer and at the single anchor.

15. The apparatus of claim 12, wherein the MEMS IC includes an inertial sensor.

16. The apparatus of claim 12, wherein the MEMS IC includes a three-axis gyroscope sensor and a three-axis accelerometer.

17. The apparatus of claim 16, wherein the three-axis gyroscope sensor and the three-axis accelerometer are mechanically integrated within the device layer.

18. The apparatus of claim 12, including a MEMS pressure sensor IC coupled to the first side of the controller IC.

19. The apparatus of claim 12, including a high voltage controller IC coupled to the first side of the controller IC proximate the MEMS IC, the high voltage controller IC configured to operate with higher voltages than the controller IC.

20. The apparatus of claim 12, wherein the controller IC includes an application-specific IC (ASIC).