Adaptive Programming For Non-Volatile Memory Devices
First Claim
1. An apparatus comprising:
- a memory structure comprising non-volatile memory cells that are arranged on word lines and bit lines; and
a microcontroller that is communicatively coupled with the memory structure, the microcontroller configured to receive data to write to the memory structure, write the data to the memory structure using a selected word line of the word lines, detect a failure to write the data, apply, based on the failure, a negative bias voltage to one or more unselected word lines of the word lines during a negative bias period, and write the data to the portion of the memory cells using the selected word line during the negative bias period.
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Abstract
Systems and techniques for performing write operations on non-volatile memory are described. A described system includes a memory structure including non-volatile memory cells that are arranged on word lines and bit lines and a microcontroller that is communicatively coupled with the memory structure. The memory structure can include non-volatile memory cells that are arranged on word lines and bit lines. The microcontroller can be configured to receive data to write to the memory structure, write the data to the memory structure using a selected word line of the word lines, detect a failure to write the data, apply, based on the failure, a negative bias voltage to one or more unselected word lines of the word lines during a negative bias period, and write the data to the portion of the memory cells using the selected word line during the negative bias period.
2 Citations
20 Claims
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1. An apparatus comprising:
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a memory structure comprising non-volatile memory cells that are arranged on word lines and bit lines; and a microcontroller that is communicatively coupled with the memory structure, the microcontroller configured to receive data to write to the memory structure, write the data to the memory structure using a selected word line of the word lines, detect a failure to write the data, apply, based on the failure, a negative bias voltage to one or more unselected word lines of the word lines during a negative bias period, and write the data to the portion of the memory cells using the selected word line during the negative bias period. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8)
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9. A system comprising:
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a memory module comprising a microcontroller and non-volatile memory cells that are arranged on word lines and bit lines; and a memory controller that is communicatively coupled with the memory structure, the memory controller configured to provide data to the memory module for storage, wherein the microcontroller is configured to write the data to the a portion of the memory cells using a selected word line of the word lines, detect a failure to write the data, apply, based on the failure, a negative bias voltage to one or more unselected word lines of the word lines, and write the data to the memory structure using the selected word line while the negative bias voltage is applied to the one or more unselected word lines. - View Dependent Claims (10, 11, 12, 13, 14, 15)
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16. A method comprising:
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receiving data to write to a memory structure, the memory structure comprising non-volatile memory cells that are arranged on word lines and bit lines; writing the data to the memory structure using a selected word line of the word lines; detecting a failure to write the data; applying, based on the failure, a negative bias voltage to one or more unselected word lines of the word lines during a negative bias period; and writing, during the negative bias period, the data to the memory structure using the selected word line. - View Dependent Claims (17, 18, 19, 20)
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Specification