NITRIDE SEMICONDUCTOR SUBSTRATE, SEMICONDUCTOR DEVICE, AND METHODS FOR MANUFACTURING NITRIDE SEMICONDUCTOR SUBSTRATE AND SEMICONDUCTOR DEVICE

• US 20130252401A1
• Filed: 05/16/2013
• Published: 09/26/2013
• Est. Priority Date: 09/24/2009
• Status: Abandoned Application

• Current Assignee: Sumitomo Electric Industries Limited (Sumitomo Corporation)
• Original Assignee: Sumitomo Electric Industries Limited (Sumitomo Corporation)
• Inventors: MATSUMOTO, Naoki, MIKAMI, Hidenori, YAMAGUCHI, Sayuri
• Application Number:
  US13/895,924
• Publication Number:
  US 20130252401A1
• Time in Patent Office: Days
• US Class Current: 438/460
• CPC Class Codes: C30B 29/406 Gallium nitride
• CPC Class Codes: C30B 33/00 After-treatment of single crystals or homogeneous polycrystalline material with defined structure C30B31/00 takes precedence
• CPC Class Codes: H01L 21/02021 Edge treatment, chamfering
• CPC Class Codes: Y10T 83/04 Processes

Abstract

A nitride semiconductor substrate having a main surface serving as a semipolar plane and provided with a chamfered portion capable of effectively preventing cracking and chipping, a semiconductor device fabricated using the nitride semiconductor substrate, and a method for manufacturing the nitride semiconductor substrate and the semiconductor device are provided. The nitride semiconductor substrate includes a main surface inclined at an angle of 71° or more and 79° or less with respect to the (0001) plane toward the [1-100] direction or inclined at an angle of 71° or more and 79° or less with respect to the (000-1) plane toward the [−1100] direction; and a chamfered portion located at an edge of an outer periphery of the main surface. The chamfered portion is inclined at an angle θ1 or θ2 of 5° or more and 45° or less with respect to adjacent one of the main surface and a backside surface on a side opposite to the main surface. Accordingly, cracking and chipping occurring from the edge of the outer periphery of the nitride semiconductor substrate can be effectively suppressed.

Claims

1-5. -5. (canceled)

6. :

A method for manufacturing a nitride semiconductor substrate, comprising the steps of;

preparing a nitride semiconductor substrate having a main surface inclined at an angle of 71°

or more and 79°

or less with respect to a (0001) plane toward a [1-100] direction or inclined at an angle of 71°

or more and 79°

or less with respect to a (000-1) plane toward a [−

1100] direction; and

chamfering an edge of an outer periphery of said main surface of said nitride semiconductor substrate,

said step of chamfering the edge includes the step of forming a chamfered portion inclined at an angle of 5°

or more and 45°

or less with respect to adjacent one of said main surface and a backside surface on a side opposite to said main surface.

7. :

A method for manufacturing a semiconductor device, comprising the steps of;

preparing a nitride semiconductor substrate using the method for manufacturing a nitride semiconductor substrate according to claim 6; and

forming an epitaxial layer on said main surface of said nitride semiconductor substrate.