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Gate Overvoltage Protection for Compound Semiconductor Transistors

  • US 20130256699A1
  • Filed: 03/30/2012
  • Published: 10/03/2013
  • Est. Priority Date: 03/30/2012
  • Status: Active Grant
First Claim
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1. A transistor device, comprising:

  • a compound semiconductor body;

    a drain disposed in the compound semiconductor body;

    a source disposed in the compound semiconductor body and spaced apart from the drain by a channel region;

    a gate operable to control the channel region; and

    a gate overvoltage protection device connected between the source and the gate and comprising p-type and n-type silicon-containing semiconductor material.

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