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TRANSISTOR, SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR MODULE INCLUDING THE SAME

  • US 20130256770A1
  • Filed: 02/27/2013
  • Published: 10/03/2013
  • Est. Priority Date: 03/29/2012
  • Status: Active Grant
First Claim
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1. A semiconductor device comprising:

  • an active region in a substrate;

    a field region defining the active region;

    a first source/drain region and a second source/drain region in the active region;

    a gate trench in the active region and the field region, the gate trench being between the first and second source/drain regions in the active region; and

    a gate structure within the gate trench,wherein the gate structure comprises;

    a gate electrode;

    a gate dielectric between the gate electrode and the active region;

    an insulating gate capping pattern on the gate electrode; and

    an insulating metal-containing material layer between the insulating gate capping pattern and the active region, the insulating metal-containing material layer being at least partially within the gate trench.

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