SEMICONDUCTOR DEVICE
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Accused Products
Abstract
The semiconductor device includes a source line, a bit line, a signal line, a word line, memory cells connected in parallel between the source line and the bit line, a first driver circuit electrically connected to the source line and the bit line through switching elements, a second driver circuit electrically connected to the source line through a switching element, a third driver circuit electrically connected to the signal line, and a fourth driver circuit electrically connected to the word line. The memory cell includes a first transistor including a first gate electrode, a first source electrode, and a first drain electrode, a second transistor including a second gate electrode, a second source electrode, and a second drain electrode, and a capacitor. The second transistor includes an oxide semiconductor material.
6 Citations
34 Claims
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1. (canceled)
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2. A semiconductor device comprising:
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a first transistor comprising a gate electrode; a first insulating layer comprising an opening, wherein the gate electrode of the first transistor is positioned in the opening; a second transistor comprising; an oxide semiconductor layer on the first insulating layer; a first conductive layer and a second conductive layer over the oxide semiconductor layer; a second insulating layer over the oxide semiconductor layer, the first conductive layer, and the second conductive layer; and a gate electrode over the second insulating layer and overlapping with the oxide semiconductor layer a switching element electrically connected the second conductive layer; and a driver circuit electrically connected to the second conductive layer through the switching element, wherein the oxide semiconductor layer comprises indium and zinc, wherein the first conductive layer is in contact with the surface of the gate electrode of the first transistor and the first insulating layer. - View Dependent Claims (3, 4, 5, 6, 7, 8, 9, 10, 11, 12)
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13. A semiconductor device comprising:
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a first transistor comprising a gate electrode; a first insulating layer surrounding the gate electrode of the first transistor; a second transistor comprising; an oxide semiconductor layer on the first insulating layer; a first conductive layer and a second conductive layer over the oxide semiconductor layer; a second insulating layer over the oxide semiconductor layer, the first conductive layer, and the second conductive layer; and a gate electrode over the second insulating layer and overlapping with the oxide semiconductor layer; a switching element electrically connected the second conductive layer; and a driver circuit electrically connected to the second conductive layer through the switching element, wherein the oxide semiconductor layer comprise indium and zinc, wherein a surface of the gate electrode of the first transistor and a surface of the first insulating layer are included in a same planarized surface, and wherein the first conductive layer is in contact with the surface of the gate electrode of the first transistor. - View Dependent Claims (14, 15, 16, 17, 18, 19, 20, 21, 22, 23)
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24. A semiconductor device comprising:
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a first transistor comprising a gate electrode; a first insulating layer over the first transistor, wherein the gate electrode of the first transistor is exposed from the first insulating layer; a second transistor comprising; an oxide semiconductor layer on the first insulating layer; a first conductive layer and a second conductive layer over the oxide semiconductor layer; a second insulating layer over the oxide semiconductor layer, the first conductive layer, and the second conductive layer; and a gate electrode over the second insulating layer and overlapping with the oxide semiconductor layer; a switching element electrically connected the second conductive layer; and a driver circuit electrically connected to the second conductive layer through the switching element, wherein the oxide semiconductor layer comprises indium and zinc, wherein the first conductive layer is in contact with the surface of the gate electrode of the first transistor and the first insulating layer. - View Dependent Claims (25, 26, 27, 28, 29, 30, 31, 32, 33, 34)
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Specification