SOLID-STATE IMAGING DEVICE, METHOD OF MANUFACTURING SOLID-STATE IMAGING DEVICE, APPARATUS FOR MANUFACTURING SEMICONDUCTOR DEVICE, METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, AND ELECTRONIC DEVICE

• US 20130256824A1
• Filed: 04/01/2013
• Published: 10/03/2013
• Est. Priority Date: 04/02/2012
• Status: Active Grant

• Current Assignee: Sony Corporation (Sony Group Corp.)
• Original Assignee: Sony Corporation (Sony Group Corp.)
• Inventors: OKA, OSAMU, MIZUTA, KYOHEI, KOIKE, KAORU, FUJII, NOBUTOSHI, KOBAYASHI, HIDEKI, YOSHIOKA, HIROTAKA
• Granted Patent: US 8,946,797 B2
• Time in Patent Office: Days
• US Class Current: 257/459
• CPC Class Codes: H01L 21/76898 formed through a semiconductor substrate
• CPC Class Codes: H01L 2224/80013 Plasma cleaning
• CPC Class Codes: H01L 2224/80895 between electrically conductive surfaces, e.g. copper-copper direct bonding, surface activated bonding
• CPC Class Codes: H01L 2224/80896 between electrically insulating surfaces, e.g. oxide or nitride layers
• CPC Class Codes: H01L 23/481 Internal lead connections, e.g. via connections, feedthrough structures
• CPC Class Codes: H01L 27/14634 Assemblies, i.e. Hybrid structures
• CPC Class Codes: H01L 27/1464 Back illuminated imager structures
• CPC Class Codes: H01L 27/14687 Wafer level processing
• CPC Class Codes: H01L 27/1469 Assemblies, i.e. hybrid integration
• CPC Class Codes: H01L 2924/00014 the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details

Abstract

There is provided a solid-state imaging device including a sensor substrate having a sensor-side semiconductor layer including a pixel region in which a photoelectric conversion section is provided and a sensor-side wiring layer provided on an opposite surface side from a light receiving surface of the sensor-side semiconductor layer, a circuit substrate having a circuit-side semiconductor layer and a circuit-side wiring layer and provided on a side of the sensor-side wiring layer of the sensor substrate, a connection unit region in which a connection section is provided, the connection section having a first through electrode, a second through electrode, and a connection electrode connecting the first through electrode and the second through electrode, and an insulating layer having a step portion which has the connection electrode embedded therein and has a film thickness that gradually decreases from the connection unit region to the pixel region.

Claims

1. A solid-state imaging device comprising:

a sensor substrate having a sensor-side semiconductor layer including a pixel region in which a photoelectric conversion section is provided and a sensor-side wiring layer provided on an opposite surface side from a light receiving surface of the sensor-side semiconductor layer;

a circuit substrate having a circuit-side semiconductor layer and a circuit-side wiring layer and provided on a side of the sensor-side wiring layer of the sensor substrate;

a connection unit region in which a connection section is provided, the connection section having a first through electrode provided to reach from a light receiving surface side of the sensor-side semiconductor layer to the sensor-side wiring layer, a second through electrode provided to reach from the light receiving surface side of the sensor-side semiconductor layer to the circuit-side wiring layer, and a connection electrode provided on a surface of the light receiving surface side of the sensor-side semiconductor layer and connecting the first through electrode and the second through electrode; and

an insulating layer having a step portion which has the connection electrode embedded therein and has a film thickness that gradually decreases from the connection unit region to the pixel region.

2. The solid-state imaging device according to claim 1, wherein the step portion is provided in a manner that the insulating layer is gradually thinned from the connection unit region to a region adjacent to the connection unit region, and the connection unit region is provided with a convex portion.

3. The solid-state imaging device according to claim 2,

wherein a plurality of the connection unit regions are provided, and

wherein each connection unit region is arranged along a predetermined side corresponding to the pixel region of a division.

4. The solid-state imaging device according to claim 3, wherein the step portion is provided at a position that encloses the connection unit region.

5. The solid-state imaging device according to claim 4, wherein a planar shape of the convex portion is a corner-round rectangular shape extending in a direction along a side corresponding to the pixel region.

6. The solid-state imaging device according to claim 5,

wherein the insulating layer has a laminated structure formed of different materials, and

wherein a film constituting an upper-layer portion of the laminated structure is removed from the insulating layer in a lower portion of the step portion.

7. A solid-state imaging device comprising:

a sensor substrate having a sensor-side semiconductor layer including a pixel region in which a photoelectric conversion section is provided and a sensor-side wiring layer provided on an opposite surface side from a light receiving surface of the sensor-side semiconductor layer;

a circuit substrate having a circuit-side semiconductor layer and a circuit-side wiring layer, and laminated and provided on a side of the sensor-side wiring layer of the sensor substrate;

a connection unit region in which a connection section is provided, the connection section having a first through-via provided to reach from a light receiving surface side of the sensor-side semiconductor layer to the sensor-side wiring layer, a second through-via provided to reach from the light receiving surface side of the sensor-side semiconductor layer to the circuit-side wiring layer, and a connection electrode provided on a surface of a light receiving surface side of the sensor substrate and connecting the first through-via and the second through-via; and

an insulating layer which has the connection electrode embedded therein, has a thickness in a region outside the connection unit region thinner than a thickness in the connection unit region, has a cross-sectional shape in a region including the connection unit region of a convex portion of a convex shape, and a planar shape of the convex portion is a corner-round rectangular shape extending in a direction along a side of the pixel region.

8. A method of manufacturing a solid-state imaging device, comprising:

bonding a sensor substrate having a sensor-side semiconductor layer including a pixel region in which a photoelectric conversion section is provided and a sensor-side wiring layer provided on an opposite surface side from a light receiving surface of the sensor-side semiconductor layer with a circuit-side semiconductor layer and a circuit-side wiring layer in a manner that a surface of the sensor-side wiring layer faces a surface of the circuit-side wiring layer;

forming an insulating layer on a light receiving surface side of the sensor substrate;

forming a connection section in a connection unit region outside the pixel region, the connection section having a first through electrode provided to reach from a surface of the insulating layer to the sensor-side wiring layer, a second through electrode provided to reach from the surface of the insulating layer to the circuit-side wiring layer, and a connection electrode provided on the surface of the insulating layer and connecting the first through electrode and the second through electrode; and

etching the insulating layer to a predetermined depth in a manner that a film thickness is gradually thinned from the connection unit region to the pixel region.

9. A method of manufacturing a solid-state imaging device, comprising:

bonding a sensor substrate having a sensor-side semiconductor layer including a pixel region in which a photoelectric conversion section is provided and a sensor-side wiring layer provided on an opposite surface side from a light receiving surface of the sensor-side semiconductor layer with a circuit-side semiconductor layer and a circuit-side wiring layer in a manner that a surface of the sensor-side wiring layer faces a surface of the circuit-side wiring layer;

forming an insulating layer on a light receiving surface side of the sensor substrate;

forming a connection section in a connection unit region outside the pixel region, the connection section having a first through electrode provided to reach from a surface of the insulating layer to the sensor-side wiring layer, a second through electrode provided to reach from the surface of the insulating layer to the circuit-side wiring layer, and a connection electrode provided on the surface of the insulating layer and connecting the first through electrode and the second through electrode; and

forming a convex portion of which a planar shape is a corner-round rectangular shape extending in a direction along a side of the pixel region by etching the insulating layer to a predetermined depth in a region outside the connection unit region.

10. An electronic device comprising:

a solid-state imaging device; and

a signal processing circuit configured to process an output signal output from the solid-state imaging device,

wherein the solid-state imaging device includes

a sensor substrate having a sensor-side semiconductor layer including a pixel region in which a photoelectric conversion section is provided and a sensor-side wiring layer provided on an opposite surface side from a light receiving surface of the sensor-side semiconductor layer,

a circuit substrate having a circuit-side semiconductor layer and a circuit-side wiring layer and provided on a side of the sensor-side wiring layer of the sensor substrate,

a connection unit region in which a connection section is provided, the connection section having a first through electrode provided to reach from a light receiving surface side of the sensor-side semiconductor layer to the sensor-side wiring layer, a second through electrode provided to reach from the light receiving surface side of the sensor-side semiconductor layer to the circuit-side wiring layer, and a connection electrode provided on a surface of the light receiving surface side of the sensor-side semiconductor layer and connecting the first through electrode and the second through electrode, and

an insulating layer having a step portion which has the connection electrode embedded therein and has a film thickness that gradually decreases from the connection unit region to the pixel region.

11. An apparatus for manufacturing a semiconductor device, comprising:

a first chuck configured to suction only a partial region of a back surface of a first substrate;

a second chuck configured to suction only a partial region of a back surface of a second substrate; and

a control section configured to control operations of the first chuck and the second chuck,

wherein, when the first substrate and the second substrate are bonded with each other, the first substrate and the second substrate are controlled to have shapes warped by warpage amounts in which a region of a surface of the first substrate corresponding to the partial region suctioned by the first chuck and a region of a surface of the second substrate corresponding to the partial region suctioned by the second chuck are initially in contact,

wherein the control section aligns positions of the first substrate and the second substrate for the bonding, and

wherein the control section starts the bonding of the first substrate and the second substrate by pressing a surface of a substrate suctioned by one of the first chuck and the second chuck against a surface of the other substrate.

12. The apparatus according to claim 11, wherein the first substrate and the second substrate have convex surface shapes with substantially identical warpage amount, and are mutually controlled to have shapes in which convex surfaces face each other.

13. The apparatus according to claim 11,

wherein one of the first substrate and the second substrate has a larger warpage amount than the other substrate,

wherein the substrate having the larger warpage amount is controlled to have a convex shape toward the substrate having the smaller warpage amount, and

wherein the substrate having the smaller warpage amount is controlled to have a concave shape toward the substrate having the larger warpage amount.

14. The apparatus according to claim 11, wherein the control section controls bonding conditions of the first substrate and the second substrate based on at least one of warpage amounts of the first substrate and the second substrate and a distance between the first substrate and the second substrate.

15. The apparatus according to claim 11, further comprising:

a detection section configured to detect a plurality of marks formed on each of the first substrate and the second substrate,

wherein the control section aligns positions of the first substrate and the second substrate based on position information regarding the plurality of marks detected by the detection section.

16. The apparatus according to claim 11,

wherein a suction region of the first substrate suctioned by the first chuck and a suction region of the second region suctioned by the second chuck have different areas, and

wherein one suction region is included in a partial region of the other suction region when viewed in a bonding direction.

17. The apparatus according to claim 16, wherein an area of the suction region of the first substrate suctioned by the first chuck and an area of the suction region of the second substrate suctioned by the second chuck are determined based on a positioning error and a conveyance error relating to pre-alignment of the first substrate and the second substrate.

18. A method of manufacturing a semiconductor device formed by bonding a back surface of a first substrate and a back surface of a second substrate, the first substrate and the second substrate being controlled to have shapes warped by warpage amounts in which a region of a surface corresponding to a partial region of the back surface of the first substrate suctioned by a first chuck and a region of a surface corresponding to a partial region of the back surface of the second substrate suctioned by a second chuck are initially in contact when the first substrate and the second substrate are bonded, the method comprising:

suctioning, by the first chuck, only the partial region of the back surface of the first substrate;

suctioning, by the second chuck, only the partial region of the back surface of the second substrate;

aligning positions of the first substrate and the second substrate for the bonding; and

starting the bonding of the first substrate and the second substrate by pressing a surface of a substrate suctioned by one of the first chuck and the second chuck against a surface of the other substrate.