ADAPTIVE GATE DRIVE CONTROL METHOD AND CIRCUIT FOR COMPOSITE POWER SWITCH

• US 20130257177A1
• Filed: 03/27/2012
• Published: 10/03/2013
• Est. Priority Date: 03/27/2012
• Status: Active Grant

• Current Assignee: Raytheon Company (Rtx Corporation)
• Original Assignee: Raytheon Company (Rtx Corporation)
• Inventors: Jacobson, Boris S., Jung, Edward
• Granted Patent: US 9,030,054 B2
• Time in Patent Office: Days
• US Class Current: 307/115
• CPC Class Codes: H02M 1/08 Circuits specially adapted for the generation of control voltages for semiconductor devices incorporated in static converters
• CPC Class Codes: H02M 3/33584 Bidirectional converters
• CPC Class Codes: H03K 17/0406 in composite switches
• CPC Class Codes: H03K 17/04123 in field-effect transistor switches
• CPC Class Codes: H03K 17/122 in field-effect transistor switches
• CPC Class Codes: H03K 17/127 in composite switches
• CPC Class Codes: H03K 17/14 Modifications for compensating variations of physical values, e.g. of temperature
• CPC Class Codes: H03K 17/567 Circuits characterised by the use of more than one type of semiconductor device, e.g. BIMOS, composite devices such as IGBT

Abstract

Provided is a method of controlling a hybrid switch comprising a first individually controllable semiconductor switch operably coupled in parallel to a second individually controllable semiconductor switch. The first semiconductor switch has a faster switching speed and lower power-processing capability than the second semiconductor switch. A first reference value V_1REF for a first default turn-on transition time interval ΔT₁ and a second reference value V_2REF for a second default turn-off transition time interval ΔT₂ are accessed for the controllable hybrid switch, which is enabled and controlled so that it operates in accordance with V_1REF and V_2REF. The duration of the default ΔT₁ and ΔT₂ used to control operation of the controllable hybrid switch is dynamically adjusted to compensate for at least one of variations in a current to a load operably coupled to the controllable hybrid switch and environmental conditions at the controllable hybrid switch.

Claims

1. A method of controlling a hybrid switch, the method comprising:

providing a controllable hybrid switch comprising a first semiconductor switch operably coupled in parallel to a second semiconductor switch, each respective semiconductor switch being individually controllable and having a respective switching speed and a respective power-processing capability, wherein the first semiconductor switch has a faster switching speed than that of the second semiconductor switch and wherein the second semiconductor switch has a higher power-processing capability than that of the first semiconductor switch;

accessing first device data for the controllable hybrid switch, the device data comprising a first reference value V_1REF for a first default turn-on transition time interval Δ

T₁ and a second reference value V_2REF for a second default turn-off transition time interval Δ

T₂;

enabling the controllable hybrid switch and controlling the operation of the controllable hybrid switch so that it operates in accordance with the first device data; and

dynamically adjusting the duration of the default Δ

T₁ and Δ

T₂ used to control operation of the controllable hybrid switch, so as to compensate for at least one of variations in a current to a load operably coupled to the controllable hybrid switch and environmental conditions at the controllable hybrid switch.

2. The method of claim 1, wherein dynamic adjustment of the default Δ

T₁ and Δ

T₂ so as to compensate for variations in current to a load further comprises;

monitoring a voltage across the controllable hybrid switch and a current through the second semiconductor device;

if the voltage sensed across the controllable hybrid switch is less than V_1REF, adjusting Δ

T₁ so as to turn on the second semiconductor switch; and

if the current sensed through the second semiconductor device is less than V_2REF, adjusting Δ

T₂ so as to turn off the first semiconductor switch.

3. The method of claim 2, wherein the monitoring of voltage and current occurs at least one of continuously and substantially periodically.

4. The method of claim 1, wherein compensating for environmental conditions further comprises:

monitoring a first operating temperature at the first semiconductor switch and a second operating temperature at the second semiconductor switch; and

dynamically adjusting at least one of the default values V_1REF and V_2REF used to control operation of the controllable hybrid switch, the dynamic adjustment based at least in part on at least one of the monitored first operating temperature, the monitored second operating temperature, and the monitored first current through the second semiconductor switch, wherein the adjustment of the at least one of the default values V_1REF and V_2REF effectively also dynamically adjusts at least one of the default Δ

T₁ and the default Δ

T₂.

5. The method of claim 4, further comprising:

accessing second device data for the controllable hybrid switch, the second device data comprising;

a first nominal junction temperature T_J1NOM for the first semiconductor switch and a first nominal power threshold P_1NOM;

for the first semiconductor switch;

controlling the operation of the controllable hybrid switch so that it operates in accordance with the both the first device data and the second device data;

monitoring junction temperature T_J1 and measured power P_M1 of the first semiconductor switch;

if T_J1 is greater than T_1NOM or if P_M1 is greater than or equal to P_1NOM, then dynamically inserting a time delay to at least one of V_1REF and V_2REF used to control operation of the controllable hybrid switch, wherein the time delay comprises a period of time sufficient to settle at least one of the junction temperatures of the first semiconductor switch and the second semiconductor switch.

6. The method of claim 4, further comprising:

accessing third device data for the controllable hybrid switch, the third device data comprising;

a second nominal junction temperature TJ_2NOM for the second semiconductor switch; and

a second nominal power threshold P_2NOM for the second semiconductor switch;

controlling the operation of the controllable hybrid switch so that it operates in accordance with the both the first device data and the third device data;

monitoring junction temperature T_J2 and measured power P_M2 of the second semiconductor switch;

monitoring junction temperature T_J2 and measured power P_M2 of the second semiconductor switch; and

if T_J2≧

T_2NOM or if P_M2≧

P_2NOM, then providing a notification to report the difference.

7. The method of claim 6, wherein the notification is provided to a control system in operable communication with the controllable hybrid switch, the control system constructed and arranged to control operation of the controllable hybrid switch.

8. The method of claim 1, further comprising:

accessing device data for the controllable hybrid switch, the device data comprising;

a first nominal junction temperature T_J1NOM for the first semiconductor switch;

a first nominal power threshold P_1NOM;

for the first semiconductor switch;

a second nominal junction temperature TJ_2NOM for the second semiconductor switch; and

a second nominal power threshold P_2NOM for the second semiconductor switch;

enabling the controllable hybrid switch and controlling the operation of the controllable hybrid switch so that it operates in accordance with its device data;

monitoring a first operating temperature at the first semiconductor switch and a second operating temperature at the second semiconductor switch;

monitoring junction temperature T_J1 and measured power P_M1 of the first semiconductor switch and junction temperature T_J2 and measured power P_M2 of the second semiconductor switch;

dynamically adjusting at least one of the default values V_1REF and V_2REF used to control operation of the controllable hybrid switch, the dynamic adjustment based at least in part on at least one of the monitored first operating temperature, the monitored second operating temperature, and the monitored first current through the second semiconductor switch, wherein the adjustment of the at least one of the default values V_1REF and V_2REF effectively also dynamically adjusts at least one of the default Δ

T₁ and the default Δ

T₂ used to control the controllable hybrid switch;

if T_J1 is greater than T_1NOM or if P_M1 is greater than or equal to P_1NOM, then dynamically inserting a time delay to at least one of V_1REF and V_2REF, used to control operation of the controllable hybrid switch, wherein the time delay comprises a period of time sufficient to settle at least one of the junction temperatures of the first semiconductor switch and the second semiconductor switch; and

if T_J2≧

T_2NOM or if P_M2≧

P_2NOM, then providing a notification to report the difference.

9. The method of claim 1, wherein the first and second controllable semiconductor switches comprise one of the following pairings:

the first controllable semiconductor switch comprises a controllable metal oxide semiconductor field effect transistor (MOSFET) and the second controllable semiconductor switch comprises a controllable insulated gate bipolar transistor (IGBT);

or

the first controllable semiconductor switch comprises a controllable IGBT and the second controllable semiconductor switch comprises a controllable thyristor.

10. A method for controlling the operation of a hybrid switch, the method comprising:

providing a controllable hybrid switch, the controllable hybrid switch comprising a first semiconductor switch operably coupled in parallel to a second semiconductor switch, each semiconductor switch being individually controllable and having a respective switching speed and a respective power-processing capability, wherein the first semiconductor switch has a faster switching speed than that of the second semiconductor switch and wherein the second semiconductor switch has a higher power-processing capability than that of the first semiconductor switch;

enabling the hybrid switch;

dynamically receiving data indicating operating condition information for at least one of the controllable hybrid switch, the first semiconductor switch, and the second semiconductor switch;

if the operating condition information indicates imminent failure of at least one of the first semiconductor switch, and the second semiconductor switch, then;

turning off the respective first or second semiconductor switch whose operating condition indicates the imminent failure; and

dynamically controlling operation of the controllable hybrid switch by controlling operation of the other of the first and second semiconductor switches to be in at least one of three operating modes;

operating for a limited time, operating at reduced power, or operating for both a limited time and at reduced power.

11. The method of claim 10, further comprising:

if the controllable hybrid switch is operated for either a limited time or for a limited time at reduced power, shutting down the controllable hybrid switch when the limited time is expired.

12. The method of claim 11, further comprising sending a notification when the controllable hybrid switch is shut down.

13. The method of claim 10, further comprising:

if the operating condition information indicates that either the first or second semiconductor switch is in a condition of imminent failure, determining whether power to the respective first or second semiconductor switch that is not in the condition of imminent failure, can be reduced;

if the power to the respective first or second semiconductor switch that is not in condition of imminent failure cannot be reduced, then;

shutting down the respective first or second semiconductor switch in the condition of imminent failure;

determining time to shutdown of the controllable hybrid switch;

providing a first notification related to a time to shutdown of the controllable hybrid switch; and

shutting down the controllable hybrid switch after the time to shutdown has expired.

14. The method of claim 10, wherein, if power to the respective first or second semiconductor switch that is not in the condition of imminent failure can be reduced, then the method further comprises:

shutting down the respective first or second semiconductor switch in the condition of imminent failure;

dynamically controlling operation of the other first or second semiconductor switch not in the condition of imminent failure such that it operates at a reduced power;

shutting down, after a first predetermined time, the first or second semiconductor switch that that is operating at reduced power; and

shutting down the controllable hybrid switch after shutting down the first or second semiconductor switch that is operating at reduced power.

15. The method of claim 10, wherein, if the operating condition information indicates imminent failure of at least one of the first semiconductor switch and the second semiconductor switch, the method further comprises:

accessing device data associated with the other of the respective first or second semiconductor switch, where the other respective first or second semiconductor switch is not in imminent failure, the device data comprising at least one of a default drain to source voltage (V_DS) boundary, a default power boundary (PB), a default RMS current boundary (I_DRMS), a default R_DS(on) limited current boundary, Switching Safe Operating Area (SSOA), breakdown collector to emitter voltage boundary V_CES and pulsed collector current I_CM;

computing, for each respective junction temperature of the first or second semiconductor switch not in imminent failure, in a predetermined range of temperatures, a set of boundaries, each respective boundary based on the device data for the respective first or second semiconductor switch and on a predetermined reliability characteristic as a function of drain current I_D and drain to source voltage V_DS for the respective first or second semiconductor switch, wherein each respective boundary defines a respective SOA;

monitoring, for the respective first or second semiconductor switch not in imminent failure, a junction temperature of the respective first or second semiconductor switch;

selecting an SOA based on the predetermined reliability characteristic that is desired; and

dynamically controlling operation of the respective first or second semiconductor switch in accordance with the respective boundary associated with the selected SOA and predetermined reliability characteristic that is desired.

16. The method of claim 10, further comprising:

determining an operating condition for at least one of the controllable hybrid switch, the first semiconductor switch, and the second semiconductor switch, the determining comprising;

monitoring an operating parameter of at least one of the controllable hybrid switch, the first semiconductor switch, and the second semiconductor switch;

accessing device data for the at least one of the controllable hybrid switch, the first semiconductor switch, and the second semiconductor switch that is being monitored;

determining a predicted value of the operating parameter based on the device data; and

comparing the predicted value of the operating parameter with the monitored operating parameter to determine whether a predetermined operating condition exists for the at least one of the controllable hybrid switch, the first semiconductor switch, and the second semiconductor switch, the predetermined operating condition indicating that the respective at least one of the controllable hybrid switch, the first semiconductor switch, and the second semiconductor switch is in danger of imminent failure.

17. The method of claim 16, wherein the predetermined operating condition comprises at least one of over-temperature, current tunneling, excessive power, over-current, over-voltage, a coolant problem, a heat sink problem, a die defect, a die bonding defect, a die attachment defect, a device package mounting defect, and an environmental condition.

18. A controllable hybrid switch, comprising:

a first semiconductor switch, the first semiconductor switch being controllable and having a first switching speed and a first power-processing capability;

a second semiconductor switch operably coupled in parallel to the first semiconductor switch, the second semiconductor switch being controllable and having a second switching speed that is slower than the first switching speed and a second power-processing capability that is larger than the first power-processing capability;

a first set of sensors sensing a first set of operating parameters for the first semiconductor switch, the first set of operating parameters including at least a first junction temperature, a first voltage across the first semiconductor switch, and a first current through the first semiconductor switch; and

a second set of sensors sensing a second set of operating parameters for the second semiconductor switch, the second set of operating parameters including at least a second junction temperature, a second voltage across the second semiconductor switch, and a second current through the second semiconductor switch; and

wherein the first and second semiconductor switches and first and second sets of sensors are constructed and arranged to be in operable communication with a controller, wherein the controller is programmed to;

access first device data for the controllable hybrid switch, the device data comprising a first reference value V_1REF for a first default turn-on transition time interval Δ

T₁ and a second reference value V_2REF for a second default turn-off transition time interval Δ

T₂;

enable the controllable hybrid switch and control the operation of the controllable hybrid switch so that it operates in accordance with the first device data; and

dynamically adjust the duration of the default Δ

T₁ and Δ

T₂ used to control operation of the controllable hybrid switch, so as to compensate for at least one of variations in a current to a load operably coupled to the controllable hybrid switch and environmental conditions at the controllable hybrid switch.

19. The controllable hybrid switch of claim 18, wherein the controller is further programmed to:

dynamically receive data indicating operating condition information for at least one of the controllable hybrid switch, the first semiconductor switch, and the second semiconductor switch; and

if the operating condition information indicates imminent failure of at least one of the first semiconductor switch, and the second semiconductor switch, then;

turn off the respective first or second semiconductor switch whose operating condition indicates the imminent failure; and

dynamically control operation of the controllable hybrid switch by controlling operation of the other of the first and second semiconductor switches to be in at least one of three operating modes;

operating for a limited time, operating at reduced power, or operating for both a limited time and at reduced power.

20. The controllable hybrid switch of claim 18, wherein the first and second controllable semiconductor switches comprise one of the following pairings:

the first controllable semiconductor switch comprises a controllable metal oxide semiconductor field effect transistor (MOSFET) and the second controllable semiconductor switch comprises a controllable insulated gate bipolar transistor (IGBT);

or

the first controllable semiconductor switch comprises a controllable IGBT and the second controllable semiconductor switch comprises a controllable thyristor.