SEMICONDUCTOR DEVICE

• US 20130258746A1
• Filed: 03/14/2013
• Published: 10/03/2013
• Est. Priority Date: 03/29/2012
• Status: Active Grant

• Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Original Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Inventors: Kurokawa, Yoshiyuki
• Granted Patent: US 9,349,722 B2
• Time in Patent Office: Days
• US Class Current: 365/72
• CPC Class Codes: G11C 11/24 using capacitors G11C11/22 takes precedence; using a combination of semiconductor devices and capacitors G11C11/34, e.g. G11C11/40
• CPC Class Codes: G11C 11/5685 using storage elements comprising metal oxide memory material, e.g. perovskites
• CPC Class Codes: G11C 13/0007 comprising metal oxide memory material, e.g. perovskites
• CPC Class Codes: G11C 2211/4016 Memory devices with silicon-on-insulator cells
• CPC Class Codes: G11C 2213/53 Structure wherein the resistive material being in a transistor, e.g. gate
• CPC Class Codes: G11C 2213/71 Three dimensional array
• CPC Class Codes: G11C 2213/74 Array wherein each memory cell has more than one access device
• CPC Class Codes: G11C 5/06 Arrangements for interconnecting storage elements electrically, e.g. by wiring
• CPC Class Codes: G11C 5/063 Voltage and signal distribution in integrated semi-conductor memory access lines, e.g. word-line, bit-line, cross-over resistance, propagation delay
• CPC Class Codes: G11C 7/16 Storage of analogue signals in digital stores using an arrangement comprising analogue/digital [A/D] converters, digital memories and digital/analogue [D/A] converters
• CPC Class Codes: H01L 27/0688 Integrated circuits having a three-dimensional layout
• CPC Class Codes: H01L 27/1225 with semiconductor materials not belonging to the group IV of the periodic table, e.g. InGaZnO
• CPC Class Codes: H10B 69/00 Erasable-and-programmable ROM [EPROM] devices not provided for in groups H10B41/00 - H10B63/00, e.g. ultraviolet erasable-and-programmable ROM [UVEPROM] devices

Abstract

A nonvolatile semiconductor device is provided. Each memory cell in a semiconductor device includes a D/A converter and an amplifier transistor. An output voltage of the D/A converter is stored as data in the memory cell, whereby two or more bits of data can be stored in the memory cell. By stacking transistors of the D/A converter with an interlayer film provided therebetween and using the parasitic resistance of a conductive material provided in a contact hole formed in the interlayer film as a resistor of the D/A converter, the area of the memory cell can be reduced. The transistor includes an oxide semiconductor in a channel formation region. Accordingly, a nonvolatile semiconductor device can be easily obtained.

Claims

1. A semiconductor device comprising:

a memory cell comprising;

a first transistor;

a second transistor over the first transistor; and

a third transistor over the second transistor,

wherein one of a source and a drain of the second transistor is electrically connected to a gate of the first transistor, and

wherein one of a source and a drain of the third transistor is electrically connected to the gate of the first transistor.

2. The semiconductor device according to claim 1,

wherein the memory cell comprises a first resistor, a second resistor, and a third resistor,

wherein the one of the source and the drain of the second transistor is electrically connected to the gate of the first transistor through the first resistor, and

wherein the one of the source and the drain of the third transistor is electrically connected to the gate of the first transistor through the second resistor and the third resistor.

3. The semiconductor device according to claim 2,

wherein a resistance of the first resistor is the same as a resistance of the second resistor and twice a resistance of the third resistor.

4. The semiconductor device according to claim 2,

wherein the memory cell comprises a fourth transistor over the third transistor,

wherein the memory cell comprises a fourth resistor, and a fifth resistor, and

wherein one of a source and a drain of the fourth transistor is electrically connected to the gate of the first transistor through the fourth resistor, the fifth resistor, and the third resistor.

5. The semiconductor device according to claim 4,

wherein a resistance of the first resistor is the same as a resistance of the second resistor and twice a resistance of the third resistor, a resistance of the fourth resistor, and a resistance of the fifth resistor.

6. The semiconductor device according to claim 4,

wherein a resistance of the first resistor is the same as a resistance of the second resistor and a resistance of the fourth resistor and twice a resistance of the third resistor and a resistance of the fifth resistor.

7. The semiconductor device according to claim 4,

wherein at least one of the second transistor, the third transistor, and the fourth transistor comprises a channel formation region comprising an oxide semiconductor.

8. A semiconductor device comprising:

a first memory cell;

a second memory cell;

a third memory cell;

a first write selection line electrically connected to the first memory cell and the second memory cell;

a second write selection line electrically connected to the third memory cell;

a first write data line electrically connected to the first memory cell and the third memory cell;

a second write data line electrically connected to the first memory cell and the third memory cell;

a third write data line electrically connected to the second memory cell;

a fourth write data line electrically connected to the second memory cell;

a first read data line electrically connected to the first memory cell and the third memory cell; and

a second read data line electrically connected to the second memory cell,

wherein each of the first memory cell, the second memory cell, and the third memory cell comprises a first transistor, a second transistor, and a third transistor,

wherein one of a source and a drain of the second transistor of each of the first memory cell, the second memory cell, and the third memory cell is electrically connected to a gate of the first transistor of each of the first memory cell, the second memory cell, and the third memory cell, and

wherein one of a source and a drain of the third transistor of each of the first memory cell, the second memory cell, and the third memory cell is electrically connected to the gate of the first transistor of each of the first memory cell, the second memory cell, and the third memory cell.

9. The semiconductor device according to claim 8,

wherein one of a source and a drain of the first transistor of each of the first memory cell and the third memory cell is electrically connected to the first read data line,

wherein one of a source and a drain of the first transistor of the second memory cell is electrically connected to the second read data line,

wherein the other of the source and the drain of the second transistor of each of the first memory cell and the third memory cell is electrically connected to the first write data line,

wherein the other of the source and the drain of the third transistor of each of the first memory cell and the third memory cell is electrically connected to the second write data line,

wherein the other of the source and the drain of the second transistor of the second memory cell is electrically connected to the third write data line,

wherein the other of the source and the drain of the third transistor of the second memory cell is electrically connected to the fourth write data line,

wherein a gate of the second transistor of each of the first memory cell and the second memory cell is electrically connected to the first write selection line,

wherein a gate of the third transistor of each of the first memory cell and the second memory cell is electrically connected to the first write selection line,

wherein a gate of the second transistor of the third memory cell is electrically connected to the second write selection line, and

wherein a gate of the third transistor of the third memory cell is electrically connected to the second write selection line.

10. The semiconductor device according to claim 9,

wherein each of the first memory cell, the second memory cell, and the third memory cell comprises a first resistor, a second resistor, and a third resistor,

wherein the one of the source and the drain of the second transistor of each of the first memory cell, the second memory cell, and the third memory cell is electrically connected to the gate of the first transistor of each of the first memory cell, the second memory cell, and the third memory cell through the first resistor of each of the first memory cell, the second memory cell, and the third memory cell, and

wherein the one of the source and the drain of the third transistor of each of the first memory cell, the second memory cell, and the third memory cell is electrically connected to the gate of the first transistor of each of the first memory cell, the second memory cell, and the third memory cell through the second resistor and the third resistor of each of the first memory cell, the second memory cell, and the third memory cell.

11. The semiconductor device according to claim 10,

wherein a resistance of the first resistor of each of the first memory cell, the second memory cell, and the third memory cell is the same as a resistance of the second resistor of each of the first memory cell, the second memory cell, and the third memory cell and twice a resistance of the third resistor of each of the first memory cell, the second memory cell, and the third memory cell.

12. The semiconductor device according to claim 10,

wherein each of the first memory cell, the second memory cell, and the third memory cell comprises a fourth transistor, a fourth resistor, and a fifth resistor, and

wherein one of a source and a drain of the fourth transistor of each of the first memory cell, the second memory cell, and the third memory cell is electrically connected to the gate of the first transistor of each of the first memory cell, the second memory cell, and the third memory cell through the fourth resistor, the fifth resistor, and the third resistor of each of the first memory cell, the second memory cell, and the third memory cell.

13. The semiconductor device according to claim 12,

wherein a resistance of the first resistor of each of the first memory cell, the second memory cell, and the third memory cell is the same as a resistance of the second resistor of each of the first memory cell, the second memory cell, and the third memory cell and twice a resistance of the third resistor of each of the first memory cell, the second memory cell, and the third memory cell, a resistance of the fourth resistor of each of the first memory cell, the second memory cell, and the third memory cell, and a resistance of the fifth resistor of each of the first memory cell, the second memory cell, and the third memory cell.

14. The semiconductor device according to claim 12,

wherein a resistance of the first resistor of each of the first memory cell, the second memory cell, and the third memory cell is the same as a resistance of the second resistor of each of the first memory cell, the second memory cell, and the third memory cell and a resistance of the fourth resistor of each of the first memory cell, the second memory cell, and the third memory cell and twice a resistance of the third resistor of each of the first memory cell, the second memory cell, and the third memory cell and a resistance of the fifth resistor of each of the first memory cell, the second memory cell, and the third memory cell.

15. The semiconductor device according to claim 12,

wherein at least one of the second transistor, the third transistor, and the fourth transistor of each of the first memory cell, the second memory cell, and the third memory cell comprises a channel formation region comprising an oxide semiconductor.

16. A semiconductor device comprising:

a memory cell comprising;

a first transistor;

a second transistor over the first transistor; and

a third transistor over the second transistor,

wherein the first transistor and the second transistor are stacked with a first insulating layer therebetween,

wherein the second transistor and the third transistor are stacked with a second insulating layer therebetween,

wherein one of a source and a drain of the second transistor is electrically connected to a gate of the first transistor through a first conductor in a first contact hole in the first insulating layer, and

wherein one of a source and a drain of the third transistor is electrically connected to the gate of the first transistor through a second conductor in a second contact hole in the first insulating layer, a third conductor in a third contact hole in the first insulating layer, and a fourth conductor in a fourth contact hole in the second insulating layer.

17. The semiconductor device according to claim 16,

wherein a resistance of the first conductor is the same as a resistance of each of the second conductor, the third conductor, and the fourth conductor.

18. The semiconductor device according to claim 16,

wherein the memory cell comprises a fourth transistor over the third transistor,

wherein the third transistor and the fourth transistor are stacked with a third insulating layer therebetween, and

wherein one of a source and a drain of the fourth transistor is electrically connected to the gate of the first transistor through the second conductor, the third conductor, a fifth conductor in a fifth contact hole in the second insulating layer, a sixth conductor in a sixth contact hole in the second insulating layer, and a seventh conductor in a seventh contact hole in the third insulating layer.

19. The semiconductor device according to claim 18,

wherein a resistance of the first conductor is the same as a resistance of each of the second conductor, the third conductor, the fourth conductor, the fifth conductor, the sixth conductor, and the seventh conductor.

20. The semiconductor device according to claim 18,

wherein at least one of the second transistor, the third transistor, and the fourth transistor comprises a channel formation region comprising an oxide semiconductor.