Wide G Range Accelerometer

• US 20130263663A1
• Filed: 04/03/2013
• Published: 10/10/2013
• Est. Priority Date: 04/04/2012
• Status: Active Grant

• Current Assignee: Analog Devices, Inc.
• Original Assignee: Analog Devices, Inc.
• Inventors: Zhang, Jianglong
• Granted Patent: US 9,027,403 B2
• Time in Patent Office: Days
• US Class Current: 73/504.12
• CPC Class Codes: B81B 7/02 containing distinct electrical or optical devices of particular relevance for their function, e.g. microelectro-mechanical systems [MEMS] B81B7/04 takes precedence
• CPC Class Codes: G01P 15/00 Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration
• CPC Class Codes: G01P 15/125 by capacitive pick-up
• CPC Class Codes: G01P 21/00 Testing or calibrating of apparatus or devices covered by the preceding groups

Abstract

A MEMS device includes a substrate, a mass having a first and second set of elongated mass fingers extending from the mass, and a support structure supporting the mass on the substrate. The support structure may include at least one anchor and a plurality of springs that allow movement of the mass relative to the substrate. The MEMS device may also include a first set of sensing fingers for sensing movement of the first set of mass fingers relative to the first set of sensing fingers, and a second set of sensing figures for sensing movement of the second set of mass fingers relative to the second set of sensing fingers. The first and second sets of sensing fingers may have different size finger gaps between the sensing fingers and the respective mass fingers.

Claims

1. A MEMS device comprising:

a substrate;

a mass having a main body, a first set of elongated mass fingers, and a second set of elongated mass fingers, the first and second sets of elongated mass fingers extending from the main body;

a support structure supporting the mass on the substrate, the support structure allowing movement of the mass relative to the substrate;

a first set of sensing fingers for sensing movement of the first set of mass fingers relative to the first set of sensing fingers, the first set of sensing fingers having a first finger gap between the first set of sensing fingers and the first set of mass fingers; and

a second set of sensing fingers for sensing movement of the second set of mass fingers relative to the second set of sensing fingers, the second set of sensing fingers having a second finger gap between the second set of sensing fingers and the second set of elongated mass fingers, the second finger gap being larger than the first finger gap when the mass is in a steady state, the first and second sets of sensing fingers being stationary relative to the substrate.

2. A MEMS device according to claim 1, wherein the first set of sensing fingers and first set of mass fingers are configured to detect low G acceleration.

3. A MEMS device according to claim 1, wherein the second set of sensing fingers and the second set of mass fingers are configured to detect high G acceleration.

4. A MEMS device according to claim 1 wherein the first gap is between 0.5 and 2.0 microns, and the second gap is between 1 and 3 microns.

5. A MEMS device according to claim 4, wherein the first gap is 1.6 microns and the second gap is 2.4 microns.

6. A MEMS device according to claim 1, wherein the mass further includes a third set of elongated mass fingers, and a fourth set of elongated mass fingers, the third and fourth set of elongated mass fingers extending from the main body.

7. A MEMS device according to claim 6, further comprising:

a third set of sensing fingers for sensing movement of the third set of mass fingers relative to the third set of sensing fingers, the third set of sensing fingers having a third finger gap between the third set of sensing fingers and the third set of elongated mass fingers; and

a fourth set of sensing fingers for sensing movement of the fourth set of mass fingers relative to the fourth set of sensing fingers, the fourth set of sensing fingers having a fourth finger gap between the fourth set of sensing fingers and the fourth set of elongated mass fingers, the fourth finger gap being larger than the third finger gap.

8. A MEMS device according to claim 7, wherein the first and third fingers gaps are the same, and the second and fourth fingers gaps are the same.

9. A MEMS device according to claim 7, wherein the first and second set of sensing fingers sense movement along a first axis.

10. A MEMS device according to claim 9, wherein the third and fourth set of sensing fingers sense movement along a second axis.

11. A MEMS device according to claim 1, wherein the support structure includes at least one anchor and a plurality of springs extending from the anchor to the mass.

12. A MEMS device according to claim 1, further comprising:

a first conductive layer located below the mass and having a positive high G electrode and a positive low G electrode; and

a second conductive layer located above the mass and having a negative high G electrode and a negative low G electrode,

the positive high G electrode and negative high G electrode having a first electrode gap between the high G electrodes and the mass, the positive low G electrode and negative low G electrode having a second electrode gap between the low G electrodes and the mass, the first electrode gap being larger than the second electrode gap.

13. A method comprising:

providing a MEMS device having;

a main body and a first and second set of elongated mass fingers extending from the main body,

a support structure supporting the mass on the substrate, the support structure allowing movement of the mass relative to the substrate,

a first set of sensing fingers for sensing movement of the first set of mass fingers relative to the first set of sensing fingers, the first set of sensing fingers having a first finger gap between the first set of sensing fingers and the first set of mass fingers, and

a second set of sensing fingers for sensing movement of the second set of mass fingers relative to the second set of sensing fingers, the second set of sensing fingers having a second finger gap between the second set of sensing fingers and the second set of elongated mass fingers, the second finger gap being larger than the first finger gap when the mass is in a steady state, the first and second sets of sensing fingers being stationary relative to the substrate;

applying a voltage to at least one of the first and second set of sensing fingers;

measuring a change in capacitance between at least one of the first and second set of elongated mass fingers and the at least one of the first and second set of sensing figures to which the voltage is applied; and

determining an acceleration based upon the measured change in capacitance.

14. A method according to claim 13, wherein applying a voltage to at least one of the first and second set of sensing fingers includes applying a voltage to the first set of sensing figures for low G applications and applying a voltage to the second set of sensing fingers for high G applications.

15. A method according to claim 13, wherein the first gap is between 0.5 and 2.0 microns, and the second gap is between 1 and 3 microns

16. A method according to claim 13, wherein the mass further includes a third set of elongated mass fingers, and a fourth set of elongated mass fingers, the third and fourth set of elongated mass fingers extending from the main body.

17. A method according to claim 16, the MEMS device further comprising:

a third set of sensing fingers for sensing movement of the third set of mass fingers relative to the third set of sensing fingers, the third set of sensing fingers having a third finger gap between the third set of sensing fingers and the third set of elongated mass fingers; and

a fourth set of sensing fingers for sensing movement of the fourth set of mass fingers relative to the fourth set of sensing fingers, the fourth set of sensing fingers having a fourth finger gap between the fourth set of sensing fingers and the fourth set of elongated mass fingers, the fourth finger gap being larger than the third finger gap,

wherein applying a voltage to the first set of sensing fingers includes applying the voltage to the third set of sensing fingers, and applying a voltage to the second set of sensing fingers includes applying the voltage to the fourth set of sensing fingers.

18. A MEMS device comprising:

a substrate;

a mass having a main body with a first and second cavity, a first set of elongated mass fingers extending from an inner wall of the main body and into the first cavity, and a second set of elongated mass fingers extending from the inner wall and into the second cavity;

a support structure supporting the mass on the substrate, the support structure allowing movement of the mass relative to the substrate;

a first set of sensing fingers for sensing movement of the first set of mass fingers relative to the first set of sensing fingers, the first set of sensing fingers having a first finger gap between the first set of sensing fingers and the first set of mass fingers; and

a second set of sensing fingers for sensing movement of the second set of mass fingers relative to the second set of sensing fingers, the second set of sensing fingers having a second finger gap between the second set of sensing fingers and the second set of elongated mass fingers, the second finger gap being larger than the first finger gap when the mass is in a steady state, the first and second sets of sensing fingers being stationary relative to the substrate.

19. A MEMS device according to claim 18, wherein the first set of sensing fingers and first set of mass fingers are configured to detect low G acceleration, and the second set of sensing fingers and the second set of mass fingers are configured to detect high G acceleration.

20. A MEMS device according to claim 18, wherein the first gap is between 0.5 and 2.0 microns, and the second gap is between 1 and 3 microns.

21. A MEMS device according to claim 18, wherein the first gap is 1.6 microns and the second gap is 2.4 microns.