PLASMA PROCESSING APPARATUS

• US 20130264014A1
• Filed: 03/12/2013
• Published: 10/10/2013
• Est. Priority Date: 03/12/2012
• Status: Active Grant

• Current Assignee: Tokyo Electron Limited
• Original Assignee: Tokyo Electron Limited
• Inventors: IIZUKA, Hachishiro
• Granted Patent: US 9,807,862 B2
• Time in Patent Office: Days
• US Class Current: 156/345.41
• CPC Class Codes: H01J 37/321 the radio frequency energy being inductively coupled to the plasma
• CPC Class Codes: H01J 37/3211 Antennas, e.g. particular shapes of coils
• CPC Class Codes: H01J 37/32119 Windows
• CPC Class Codes: H05H 1/46 using applied electromagnetic fields, e.g. high frequency or microwave energy H05H1/26 takes precedence
• CPC Class Codes: H05H 1/4652 using inductive coupling means, e.g. coils

Abstract

A plasma processing apparatus includes an ICP antenna, provided outside a processing chamber opposite to a mounting table, for supplying a high frequency power supply into the processing chamber, and a window member made of a conductor, disposed between the mounting table and the ICP antenna, forming a part of a wall of the processing chamber. The window member includes transmission units for transmitting the high frequency power in a thickness direction of the window member. Each of transmission units has a slit, which extends through the window member in the thickness direction and is configured such that its width is changeable.

Claims

1. A plasma processing apparatus comprising:

a processing chamber configured to accommodate a substrate;

a mounting table provided in the processing chamber and configured to mount thereon the substrate;

an applied antenna provided outside the processing chamber opposite to the mounting table and configured to supply a high frequency power or a microwave into the processing chamber; and

a window member made of a conductor, which forms a part of a wall of the processing chamber and is disposed between the mounting table and the applied antenna,

wherein the window member includes transmission units configured to transmit the high frequency power or the microwave in a thickness direction of the window member, and

wherein each of the transmission units includes a slit extending through the window member in the thickness direction, and a width adjustment mechanism for adjusting a width of the slit.

2. The plasma processing apparatus of claim 1, wherein the applied antenna has a ring-shaped coil connected to a high frequency power supply, and the transmission units are disposed along the ring-shaped coil.

3. The plasma processing apparatus of claim 1, wherein the width adjustment mechanism includes:

a through hole extending through the window member in the thickness direction; and

an insertion member made of a conductor, which is inserted into the through hole, and

wherein the slit is formed as a gap between the through hole and the insertion member inserted into the through hole and the width of the slit is adjusted by changing the size of the insertion member.

4. The plasma processing apparatus of claim 3, wherein a sealing member is provided in the slit.

5. The plasma processing apparatus of claim 4, wherein the through hole is a cylindrical hole;

the insertion member is a cylindrical member;

the sealing member is an O-ring; and

a ring-shaped member made of a dielectric material is provided in the slit between the O-ring and the inside of the processing chamber.

6. The plasma processing apparatus of claim 1, further comprising a covering plate-shaped member covering a surface of the window member which faces the inside of the processing chamber.

7. The plasma processing apparatus of claim 6, wherein a high frequency power supply is connected to the mounting table;

the covering plate-shaped member serves as an electrode plate made of a conductor or a semiconductor; and

the mounting table and the electrode plate constitute parallel plate electrodes.

8. The plasma processing apparatus of claim 6, wherein the covering plate-shaped member has a plurality of different slits extending therethrough in a thickness direction of the covering plate-shaped member.

9. The plasma processing apparatus of claim 8, wherein positions of slits of the transmission units formed in the window member are arranged not to be aligned with positions of the different slits formed in the covering plate-shaped member.