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SILICON CARBIDE SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME

  • US 20130264582A1
  • Filed: 02/19/2013
  • Published: 10/10/2013
  • Est. Priority Date: 04/09/2012
  • Status: Abandoned Application
First Claim
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1. A silicon carbide semiconductor device comprising:

  • a silicon carbide substrate of a first conductivity type, including a first face and a second face opposite to said first face, a trench having a sidewall being provided on said first face; and

    a first region of a second conductivity type differing from said first conductivity type, provided on said first face of said silicon carbide substrate;

    a second region of said first conductivity type, provided on said first region and separated from said silicon carbide substrate by said first region;

    a charge compensation region of said second conductivity type, provided on said sidewall of said trench;

    a gate insulation film provided on said first face, and above said first region;

    a gate electrode provided on said gate insulation film;

    a first main electrode provided on said first region; and

    a second main electrode provided on said second face.

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