SILICON CARBIDE SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME
First Claim
1. A silicon carbide semiconductor device comprising:
- a silicon carbide substrate of a first conductivity type, including a first face and a second face opposite to said first face, a trench having a sidewall being provided on said first face; and
a first region of a second conductivity type differing from said first conductivity type, provided on said first face of said silicon carbide substrate;
a second region of said first conductivity type, provided on said first region and separated from said silicon carbide substrate by said first region;
a charge compensation region of said second conductivity type, provided on said sidewall of said trench;
a gate insulation film provided on said first face, and above said first region;
a gate electrode provided on said gate insulation film;
a first main electrode provided on said first region; and
a second main electrode provided on said second face.
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Accused Products
Abstract
A trench having a sidewall is provided on a first face of a silicon carbide substrate of a first conductivity type. A first region of a second conductivity type is provided on the first face. A second region is provided on the first region, and is separated from the silicon carbide substrate by the first region. The second region is of the first conductivity type. A charge compensation region is provided on the sidewall of the trench. The charge compensation region is of the second conductivity type. A gate insulation film is provided on the first face and above the first region. A first main electrode is provided on the first region. A second main electrode is provided on a second face of the silicon carbide substrate.
9 Citations
12 Claims
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1. A silicon carbide semiconductor device comprising:
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a silicon carbide substrate of a first conductivity type, including a first face and a second face opposite to said first face, a trench having a sidewall being provided on said first face; and a first region of a second conductivity type differing from said first conductivity type, provided on said first face of said silicon carbide substrate; a second region of said first conductivity type, provided on said first region and separated from said silicon carbide substrate by said first region; a charge compensation region of said second conductivity type, provided on said sidewall of said trench; a gate insulation film provided on said first face, and above said first region; a gate electrode provided on said gate insulation film; a first main electrode provided on said first region; and a second main electrode provided on said second face. - View Dependent Claims (2, 3, 4, 5, 6)
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7. A method for manufacturing a silicon carbide semiconductor device, comprising the steps of:
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preparing a silicon carbide substrate of a first conductivity type, having a first face and a second face opposite to said first face, forming a trench having a sidewall, on said first face of said silicon carbide substrate; forming a charge compensation region of a second conductivity type differing from said first conductivity type, on said sidewall of said trench; forming a first region of said second conductivity type, on said first face of said silicon carbide substrate; forming a second region of said first conductivity type, on said first region and separated from said silicon carbide substrate by said first region; forming a gate insulation film on said first face and above said first region; forming a gate electrode on said gate insulation film; forming a first main electrode on said first region; and forming a second main electrode on said second face. - View Dependent Claims (8, 9, 10, 11, 12)
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Specification