SOLID-STATE RELAY

• US 20130265098A1
• Filed: 03/14/2013
• Published: 10/10/2013
• Est. Priority Date: 04/06/2012
• Status: Active Grant

• Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Original Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Inventors: Takahashi, Kei, Yamazaki, Shunpei
• Granted Patent: US 8,947,155 B2
• Time in Patent Office: Days
• US Class Current: 327/434
• CPC Class Codes: H03K 17/687 the devices being field-effect transistors
• CPC Class Codes: H03K 17/785 controlling field-effect transistor switches

Abstract

A solid-state relay is provided, which includes a first transistor, a second transistor, a first transmission circuit, and a second transmission circuit. A gate of the first transistor is connected to one of a source and a drain of the second transistor, one of a source and a drain of the first transistor is connected to a first terminal, and the other of the source and the drain of the first transistor is connected to a second terminal. The first transmission circuit supplies a first signal to the gate of the first transistor. The second transmission circuit supplies a second signal to a gate of the second transistor. The first terminal is connected to the second terminal when the first transistor is turned on by the first signal.

Claims

1. A solid-state relay comprising:

a first transistor;

a second transistor;

a first transmission circuit; and

a second transmission circuit,

wherein a gate of the first transistor is connected to one of a source and a drain of the second transistor,

wherein one of a source and a drain of the first transistor is connected to a first terminal,

wherein the other of the source and the drain of the first transistor is connected to a second terminal,

wherein the first transmission circuit is configured to supply a first signal to the gate of the first transistor through the other of the source and the drain of the second transistor,

wherein the second transmission circuit is configured to supply a second signal to a gate of the second transistor, and

wherein the first terminal is connected to the second terminal when the first transistor is turned on by the first signal.

2. The solid-state relay according to claim 1, wherein a channel formation region of the first transistor comprises an oxide semiconductor.

3. The solid-state relay according to claim 1, wherein a channel formation region of the second transistor comprises an oxide semiconductor.

4. The solid-state relay according to claim 1, wherein each of the first transmission circuit and the second transmission circuit comprises a photocoupler.

5. The solid-state relay according to claim 1, wherein each of the first transmission circuit and the second transmission circuit comprises at least a light-emitting element and a light-receiving element.

6. A semiconductor device comprising:

the solid-state relay according to claim 1;

a power source; and

a load,

wherein the first terminal is connected to the power source, and the second terminal is connected to the load.

7. A solid-state relay comprising:

a first transistor;

a second transistor;

a first transmission circuit; and

a second transmission circuit,

wherein a gate of the first transistor is connected to one of a source and a drain of the second transistor,

wherein one of a source and a drain of the first transistor is connected to the other of the source and the drain of the second transistor and a first terminal,

wherein the other of the source and the drain of the first transistor is connected to a second terminal,

wherein the first transmission circuit is configured to supply a first signal to the gate of the first transistor,

wherein the second transmission circuit is configured to supply a second signal to a gate of the second transistor, and

wherein the first terminal is connected to the second terminal when the first transistor is turned on by the first signal.

8. The solid-state relay according to claim 7, wherein a channel formation region of the first transistor comprises an oxide semiconductor.

9. The solid-state relay according to claim 7, wherein a channel formation region of the second transistor comprises an oxide semiconductor.

10. The solid-state relay according to claim 7, wherein each of the first transmission circuit and the second transmission circuit comprises a photocoupler.

11. The solid-state relay according to claim 7, wherein each of the first transmission circuit and the second transmission circuit comprises at least a light-emitting element and a light-receiving element.

12. A semiconductor device comprising:

the solid-state relay according to claim 7;

a power source; and

a load,

wherein the first terminal is connected to the power source, and the second terminal is connected to the load.

13. A solid-state relay comprising:

a first transistor;

a second transistor;

a third transistor;

a first transmission circuit; and

a second transmission circuit,

wherein a gate of the first transistor is connected to one of a source and a drain of the second transistor and one of a source and a drain of the third transistor,

wherein one of a source and a drain of the first transistor is connected to a first terminal,

wherein the other of the source and the drain of the first transistor is connected to the other of the source and the drain of the second transistor, the other of the source and the drain of the third transistor, and a second terminal,

wherein a gate of the third transistor is connected to the other of the source and the drain of the third transistor,

wherein the first transmission circuit is configured to supply a first signal to the gate of the first transistor, and

wherein the second transmission circuit is configured to supply a second signal to a gate of the second transistor,

wherein the first terminal is connected to the second terminal when the first transistor is turned on by the first signal.

14. The solid-state relay according to claim 13, wherein a channel formation region of the first transistor comprises an oxide semiconductor.

15. The solid-state relay according to claim 13, wherein a channel formation region of the second transistor comprises an oxide semiconductor.

16. The solid-state relay according to claim 13, wherein each of the first transmission circuit and the second transmission circuit comprises a photocoupler.

17. The solid-state relay according to claim 13, wherein each of the first transmission circuit and the second transmission circuit comprises at least a light-emitting element and a light-receiving element.

18. A semiconductor device comprising:

the solid-state relay according to claim 13;

a power source; and

a load,

wherein the first terminal is connected to the power source, and the second terminal is connected to the load.