THIN FILM DEPOSITING APPARATUS AND THIN FILM DEPOSITING METHOD USING THE SAME

• US 20130266728A1
• Filed: 09/13/2012
• Published: 10/10/2013
• Est. Priority Date: 04/06/2012
• Status: Active Grant

• Current Assignee: Samsung Display Company Limited (Samsung Electronics Co. Ltd.)
• Original Assignee: Samsung Display Company Limited (Samsung Electronics Co. Ltd.)
• Inventors: Seo, Sang-Joon, Huh, Myung-Soo, Kim, Seung-Hun, Kim, Jin-Kwang, Jo, Cheol-Rae, Jang, Choel-Min, Yi, Jeong-Ho
• Granted Patent: US 9,045,826 B2
• Time in Patent Office: Days
• US Class Current: 427/255.28
• CPC Class Codes: C23C 16/45551 for relative movement of the substrate and the gas injectors or half-reaction reactor compartments

Abstract

In a thin film deposition apparatus and a thin film deposition method using the same, a first spraying unit and a second spraying unit which are separately driven are prepared, the first spraying unit is driven to sequentially spray a first deposition source and an inert gas onto a substrate, a chamber is exhausted to remove, from the chamber, excess first deposition sources that are not adsorbed onto the substrate from the chamber, a second spraying unit is driven to sequentially spray a second deposition source and an inert gas onto the substrate, and the chamber is exhausted to remove, from the chamber, excess second deposition sources that are not adsorbed onto the substrate. When the thin film deposition method is used, the unintended generation of microparticles during deposition is sufficiently suppressed.

Claims

1. A thin film deposition apparatus, comprising:

a chamber in which a substrate is placed;

a first spraying unit for spraying a first deposition source onto the substrate; and

a second spraying unit for spraying a second deposition source onto the substrate;

wherein the first spraying unit and the second spraying unit are separately driven in the chamber.

2. The thin film deposition apparatus of claim 1, wherein each of the first spraying unit and the second spraying unit comprises a gas spraying unit for spraying an inert gas on the substrate.

3. The thin film deposition apparatus of claim 1, wherein the first spraying unit and the second spraying unit scan the substrate during deposition, and wherein a scanning direction of the first spraying unit and a scanning direction of the second spraying unit run across each other.

4. The thin film deposition apparatus of claim 3, wherein any one of the first spraying unit and the second spraying unit comprises a pair of units facing each other.

5. The thin film deposition apparatus of claim 1, wherein during deposition, one of the first spraying unit and the second spraying unit moves above the substrate while scanning, and another of the first spraying unit and the second spraying unit is fixed.

6. The thin film deposition apparatus of claim 5, wherein from among the first spraying unit and the second spraying unit, a unit that moves while scanning comprises a pair of units facing each other.

7. The thin film deposition apparatus of claim 1, further comprising an exhaustion unit for exhausting the interior of the chamber.

8. The thin film deposition apparatus of claim 1, wherein the first deposition source comprises a precursor, and the second deposition source comprises a reactant.

9. A thin film deposition method, comprising the steps of:

preparing a chamber and placing a substrate in the chamber;

executing a first deposition process to sequentially spray a first deposition source and an inert gas on the substrate;

exhausting the chamber to remove excess first deposition source that is not adsorbed onto the substrate;

executing a second deposition process to sequentially spray a second deposition source and an inert gas on the substrate; and

exhausting the chamber to remove excess second deposition source that is not adsorbed onto the substrate.

10. The thin film deposition method of claim 9, wherein in the first deposition process, the substrate is scanned by a first spraying unit along a first direction, and in the second deposition process, the substrate is scanned by a second spraying unit along a second direction which runs across the first direction.

11. The thin film deposition method of claim 9, wherein the first deposition process is performed by a first spraying unit while scanning the substrate, and the second deposition process is performed by a second spraying unit while being fixed.

12. The thin film deposition method of claim 9, further comprising the step of selecting a deposition mode of the first deposition source and the second deposition source from one of a full mode and a half mode so as to set spraying amounts of deposition sources.

13. The thin film deposition method of claim 9, wherein the first deposition source comprises a precursor, and the second deposition source comprises a reactant.