Back Contact Work Function Modification for Increasing CZTSSe Thin Film Photovoltaic Efficiency
First Claim
1. A photovoltaic device, comprising:
- a substrate;
a back contact on the substrate, wherein at least a portion of the back contact has a work function of greater than about 4.5 electron volts;
an absorber layer on a side of the back contact opposite the substrate;
a buffer layer on a side of the absorber layer opposite the back contact; and
a top electrode on a side of the buffer layer opposite the absorber layer.
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Abstract
Techniques for increasing conversion efficiency of thin film photovoltaic devices through back contact work function modification are provided. In one aspect, a photovoltaic device is provided having a substrate; a back contact on the substrate, wherein at least a portion of the back contact has a work function of greater than about 4.5 electron volts; an absorber layer on a side of the back contact opposite the substrate; a buffer layer on a side of the absorber layer opposite the back contact; and a top electrode on a side of the buffer layer opposite the absorber layer. The absorber layer preferably has thickness that is less than a depletion width+an accumulation width+a carrier diffusion length.
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Citations
24 Claims
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1. A photovoltaic device, comprising:
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a substrate; a back contact on the substrate, wherein at least a portion of the back contact has a work function of greater than about 4.5 electron volts; an absorber layer on a side of the back contact opposite the substrate; a buffer layer on a side of the absorber layer opposite the back contact; and a top electrode on a side of the buffer layer opposite the absorber layer. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13)
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14. A method of fabricating a photovoltaic device, comprising the steps of:
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providing a substrate; forming a back contact on the substrate, forming an absorber layer on a side of the back contact opposite the substrate; forming a buffer layer on a side of the absorber layer opposite the back contact; and forming a top electrode on a side of the buffer layer opposite the absorber layer, wherein at least a portion of the back contact has a work function of greater than about 4.5 electron volts. - View Dependent Claims (15, 16, 17, 18, 19, 20, 21, 22, 23)
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24. A photovoltaic device, comprising:
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a substrate; a back contact on the substrate, wherein at least a portion of the back contact has a work function of greater than about 4.5 electron volts; an absorber layer on a side of the back contact opposite the substrate, wherein the absorber layer has thickness that is less than a depletion width+an accumulation width+a carrier diffusion length; a buffer layer on a side of the absorber layer opposite the back contact; and a top electrode on a side of the buffer layer opposite the absorber layer.
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Specification