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LOW RESISTANCE BIDIRECTIONAL JUNCTIONS IN WIDE BANDGAP SEMICONDUCTOR MATERIALS

  • US 20130270514A1
  • Filed: 04/16/2012
  • Published: 10/17/2013
  • Est. Priority Date: 04/16/2012
  • Status: Abandoned Application
First Claim
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1. A light emitting diode device, comprising:

  • a first diode structure;

    a second diode structure on the first diode structure; and

    a conductive junction between the first diode structure and the second diode structure;

    wherein the conductive junction comprises a transparent conductive layer between the first diode structure and the second diode structure.

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