LOW RESISTANCE BIDIRECTIONAL JUNCTIONS IN WIDE BANDGAP SEMICONDUCTOR MATERIALS
First Claim
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1. A light emitting diode device, comprising:
- a first diode structure;
a second diode structure on the first diode structure; and
a conductive junction between the first diode structure and the second diode structure;
wherein the conductive junction comprises a transparent conductive layer between the first diode structure and the second diode structure.
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Abstract
A light emitting diode device includes a first diode structure, a second diode structure on the first diode structure, and a conductive junction between the first diode structure and the second diode structure. The conductive junction includes a transparent conductive layer between the first diode structure and the second diode structure. Low resistance heterojunction tunnel junction structures including delta-doped layers are also disclosed.
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Citations
32 Claims
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1. A light emitting diode device, comprising:
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a first diode structure; a second diode structure on the first diode structure; and a conductive junction between the first diode structure and the second diode structure; wherein the conductive junction comprises a transparent conductive layer between the first diode structure and the second diode structure. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17, 18, 19, 20, 21)
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22. A light emitting diode device, comprising:
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a diode structure including an n-type layer, an active layer on the n-type layer, and a p-type layer on the active layer; and a conductive junction on p-type layer opposite the active layer; wherein the conductive junction comprises a transparent conductive layer.
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23. A low resistance tunnel junction structure, comprising:
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first and second semiconductor layers, wherein the first layer is non-degenerately doped with n-type dopants, and wherein the second layer is non-degenerately doped with p-type dopants; and a third semiconductor layer between the first and second semiconductor layers and forming first and second heterojunctions with the first and second layers respectively, the third semiconductor layer having a narrower bandgap than the first and second layers; wherein the first, second and third layers have an associated natural polarization dipole that causes a tunneling distance between the first and second semiconductor layers to be smaller than it would be in the absence of the third layer; and a delta-doped region in the first semiconductor layer adjacent the first heterojunction, wherein the first delta-doped region is doped with n-type dopants at a doping concentration greater than 5E18 cm−
3. - View Dependent Claims (24, 25, 26, 27, 28, 29, 30, 31, 32)
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Specification