SEMICONDUCTOR DEVICE

• US 20130270553A1
• Filed: 04/11/2013
• Published: 10/17/2013
• Est. Priority Date: 04/17/2012
• Status: Active Grant

• Current Assignee: Sharp Kabushiki Kaisha (Hon Hai Precision Industry Co., Ltd.), Semiconductor Energy Laboratory Co., Ltd.
• Original Assignee: Akihiro Oda, Kenichi Okazaki, Masatoshi Yokoyama, Masayuki Sakakura, Shigeyasu Mori, Takuya Matsuo, Tsutomu Murakawa, Yoshitaka Yamamoto
• Inventors: YOKOYAMA, Masatoshi, MURAKAWA, Tsutomu, OKAZAKI, Kenichi, SAKAKURA, Masayuki, MATSUO, Takuya, ODA, Akihiro, MORI, Shigeyasu, YAMAMOTO, Yoshitaka
• Granted Patent: US 9,196,743 B2
• Time in Patent Office: Days
• US Class Current: 257/43
• CPC Class Codes: H01L 29/7869 having a semiconductor body comprising an oxide semiconductor material, e.g. zinc oxide, copper aluminium oxide, cadmium stannate

Abstract

Provided is a semiconductor device in which generation of a parasitic channel in an end region of an oxide semiconductor film is suppressed. The semiconductor device includes a gate electrode, an oxide semiconductor film, a source electrode and a drain electrode, and a channel region formed in the oxide semiconductor film. The channel region is formed between a first side surface of the source electrode and a second side surface of the drain electrode opposite to the first side surface. The oxide semiconductor film has an end region which does not overlap with the gate electrode. The end region which does not overlap with the gate electrode is positioned between a first region that is the nearest to one end of the first side surface and a second region that is the nearest to one end of the second side surface.

Claims

1. A semiconductor device comprising:

a gate electrode;

a source electrode and a drain electrode; and

an oxide semiconductor film including a channel region,

wherein the channel region overlaps with a first region between a side surface of the source electrode and a side surface of the drain electrode which is opposite to the side surface of the source electrode, and

wherein, in a portion of the oxide semiconductor film and a portion of the gate electrode each of which overlaps with a second region in which the first region is extended in a first direction perpendicular to a second direction from the side surface of the source electrode to the side surface of the drain electrode which is opposite to the side surface of the source electrode, a width of the oxide semiconductor film is larger than a width of the gate electrode in the first direction.

2. The semiconductor device according to claim 1,

wherein the oxide semiconductor film is located over the gate electrode, and

wherein the source electrode and the drain electrode is over and in contact with the oxide semiconductor film.

3. The semiconductor device according to claim 2,

wherein the gate electrode and one of the source electrode and the drain electrode are each arranged so as to extend from one side of the oxide semiconductor film, and

wherein the one of the source electrode and the drain electrode overlaps with both the oxide semiconductor film and the gate electrode.

4. The semiconductor device according to claim 1,

wherein, in the first direction of a region in which the gate electrode overlaps with one of the source electrode and the drain electrode, a width of the gate electrode is larger than a width of the one of the source electrode and the drain electrode.

5. The semiconductor device according to claim 1,

wherein the oxide semiconductor film is a film containing an oxide of one or more elements selected from indium, zinc, gallium, and tin.

6. The semiconductor device according to claim 1,

wherein the oxide semiconductor film includes a crystal portion where a c-axis is aligned in a direction parallel to a normal vector of a surface where the oxide semiconductor film is formed.

7. A semiconductor device comprising:

a gate electrode;

a source electrode and a drain electrode; and

an oxide semiconductor film,

wherein, in a first direction perpendicular to a second direction from the side surface of the source electrode to the side surface of the drain electrode which is opposite to the side surface of the source electrode, a width of the oxide semiconductor film is larger than a width of the gate electrode.

8. The semiconductor device according to claim 7,

wherein the oxide semiconductor film is located over the gate electrode, and

wherein the source electrode and the drain electrode is over and in contact with the oxide semiconductor film.

9. The semiconductor device according to claim 7,

wherein the gate electrode and one of the source electrode and the drain electrode are each arranged so as to extend from one side of the oxide semiconductor film, and

wherein the one of the source electrode and the drain electrode overlaps with both the oxide semiconductor film and the gate electrode.

10. The semiconductor device according to claim 7,

wherein, in the first direction of a region in which the gate electrode overlaps with one of the source electrode and the drain electrode, a width of the gate electrode is larger than a width of the one of the source electrode and the drain electrode.

11. The semiconductor device according to claim 7,

wherein the oxide semiconductor film is a film containing an oxide of one or more elements selected from indium, zinc, gallium, and tin.

12. The semiconductor device according to claim 7,

wherein the oxide semiconductor film includes a crystal portion where a c-axis is aligned in a direction parallel to a normal vector of a surface where the oxide semiconductor film is formed.

13. A semiconductor device comprising:

a gate electrode;

a source electrode and a drain electrode; and

an oxide semiconductor film including;

a channel region between a first side surface of the source electrode and a second side surface of the drain electrode which is opposite to the first side surface;

a first region that is the nearest to one end of the first side surface;

a second region that is the nearest to one end of the second side surface; and

a first end region which is located between the first region and the second region and which does not overlap with the gate electrode.

14. The semiconductor device according to claim 13,

wherein the oxide semiconductor film is located over the gate electrode, and

wherein the source electrode and the drain electrode is over and in contact with the oxide semiconductor film.

15. The semiconductor device according to claim 13,

wherein the gate electrode and one of the source electrode and the drain electrode are each arranged so as to extend from one side of the oxide semiconductor film, and

wherein the one of the source electrode and the drain electrode overlaps with both the oxide semiconductor film and the gate electrode.

16. The semiconductor device according to claim 13,

wherein the oxide semiconductor film further including:

a third region that is the nearest to the other end of the first side surface;

a fourth region that is the nearest to the other end of the second side surface; and

a second end region which is located between the third region and the fourth region and does not overlap with the gate electrode.

17. The semiconductor device according to claim 13,

wherein the first end region is a continuous region from the first region to the second region.

18. The semiconductor device according to claim 16,

wherein the second end region is a continuous region from the third region to the fourth region.

19. The semiconductor device according to claim 13,

wherein the first end region is provided outside a space between the first side surface and the second side surface.

20. The semiconductor device according to claim 13,

wherein the oxide semiconductor film has a third end region which overlaps with the gate electrode, and

wherein the third end region entirely overlaps with at least one of the source electrode and the drain electrode.

21. The semiconductor device according to claim 13,

wherein the oxide semiconductor film is a film containing an oxide of one or more elements selected from indium, zinc, gallium, and tin.

22. The semiconductor device according to claim 13,

wherein the oxide semiconductor film includes a crystal portion where a c-axis is aligned in a direction parallel to a normal vector of a surface where the oxide semiconductor film is formed.