Magnetoresistive random access memory cell design

• US 20130270661A1
• Filed: 04/16/2012
• Published: 10/17/2013
• Est. Priority Date: 04/16/2012
• Status: Abandoned Application

• Current Assignee: Ge Yi, Shaoping Li, Yunjun Tang, Zongrong Liu
• Original Assignee: Yunjun Tang
• Inventors: Yi, Ge, Li, Shaoping, Tang, Yunjun, Liu, Zongrong
• Application Number:
  US13/448,133
• Publication Number:
  US 20130270661A1
• Time in Patent Office: Days
• US Class Current: 257/421
• CPC Class Codes: G11C 11/161 details concerning the memory cell structure, e.g. the layers of the ferromagnetic memory cell
• CPC Class Codes: H10N 50/10 Magnetoresistive devices

Abstract

A new magnetic memory cell comprises a perpendicular-anisotropy tunneling magnetic junction (TMJ) and a fixed in-plane spin-polarizing layer, which is separated from the perpendicular-anisotropy data storage layer of tunneling magnetic junction by a non-magnetic layer. The non-magnetic layer can be made of metallic or dielectric materials.

Claims

1. A magnetic memory device, comprising:

a perpendicular-anisotropy magnetic reference layer (or layer structures) whose magnetization is fixed;

a perpendicular-anisotropy magnetic storage layer (or layer structure) whose magnetization can be changed is changeable;

a dielectric layer as tunneling barrier sandwiched between said perpendicular-anisotropy magnetic reference layer and said perpendicular-anisotropy magnetic storage layer;

a fixed in-plane anisotropy magnetic layer (or layer structure) where any current passing through gets spin polarized;

a non-magnetic layer sandwiched between said perpendicular-anisotropy magnetic storage layer and said fixed in-plan anisotropy magnetic layer.

2. The magnetic memory device of claim 1, wherein said perpendicular-anisotropy reference layer can be made of magnetic single layer such as CoPt/CoFeB;

TbCo/CoFeB, CoPt/Co, TbCoFe/Co, CoFeGe/CoFeB, TbCoFe/CoFeB, Co2FeAl/CoFeB, FePt-L10 or magnetic multilayer (repeat n times) consisting of magnetic layer and non-magnetic layer such as (Co/Pt)n, (CoNi/Pt)n, (Co/Pd)n, (CoNi/Pd)n, (Fe/Au)n, (FoCo/Au)n, (CoFeB/Pd)n, (CoFeB/Pt)n, (Fe/Pt)n, (CoFe/Pt)n, (CoFe/Pd)n etc.

3. The magnetic memory device of claim 1, wherein said perpendicular-anisotropy reference layer can be is made of special non-magnetic layer sandwiched between two perpendicular-anisotropy ferromagnetic layers, with one of which is coupled with antiferromagnetic layer such as IrMn.

4. The magnetic structure of claim 3, wherein said special non-magnetic layer can be Ru, Cu, Rh, Pd, Pt or similar, which can introduce introduces RKKY coupling between said two ferromagnetic layers in claim 3.

5. The magnetic structure of claim 3, wherein materials of the two perpendicular-anisotropy ferromagnetic layers can be are either the same or different and are made of materials such as Co, TbCo, CoCrPt, CoPt, FePt-L10, CoZrPt, FeCoCr, FeCoPt, AINiCo, FeCrPd, CoFeB, TbFeCo, CoFe, Co2FeAl, CoFeGe or their combinations etc.

6. The magnetic structure of claim 3, wherein materials of the two perpendicular-anisotropy ferromagnetic layers can be are either the same or different and are made of multilayer materials (repeat n time) such as (Co/Pt)n, (CoNi/Pt)n, (Co/Pd)n, (CoNi/Pd)n, (Fe/Au)n, (FoCo/Au)n, (CoFeB/Pd)n, (CoFeB/Pt)n, (Fe/Pt)n etc.

7. The magnetic memory device of claim 1, wherein said perpendicular-anisotropy magnetic storage layer can be is made of CoFeB, or CoFeB/TbCoFe, or Co/CoFeB, or CoFe/CoFeB, or CoFeB/Co, or CoFeB/CoFeTb/CoFeB, or Co/TbCo/Co, or Co/TbCoFe/Co, or Co2FeAl/CoFeB, or CoFeGe/CoFeB, or FePt/CoFeB, or CoFeB/FePt/CoFeB, or CoFeB/(CoFe/Pt)n, or CoFe/(CoFe/Pd)n, or CoFeB/(CoFe/Pt)n/CoFe, or CoFe/(CoFe/Pd)n/CoFe or their combinations etc.

8. The magnetic memory device of claim 1, wherein said dielectric layer can be is made of MgO, or AlOx, or CrOx, or TiOx etc.

9. The magnetic memory device of claim 1, wherein said fixed in-plane anisotropy magnetic layer can be is made of CoFe/CoCr, or CoFe/CoCrPt, or CoNiFe/CoCrPt, or FeCoNi/CoCrPt, or CoFeB/CoCr, or CoFeB/CoCrPt, or CoFeB/CoCrPd, or CoFe/CoCrPd, or CoFe/CoPt, or CoFeNi/CoPt, or CoNi/CoPt, or their combinations.

10. The magnetic memory device of claim 1, wherein said fixed in-plane anisotropy magnetic layer can be is made of special non-magnetic layer sandwiched between two in-plane magnetic-anisotropy ferromagnetic layers with, with one of which is coupled with antiferromagnetic layer such as IrMn.

11. The magnetic structure of claim 10, wherein said special non-magnetic layer can be Ru, Cu, Rh, Pt, Pd or similar, which can introduce introduces RKKY coupling between said two ferromagnetic layers in claim 10.

12. The magnetic structure of claim 10, wherein materials of the two perpendicular-anisotropy ferromagnetic layers can be are either the same or different and are made of materials such as CoFe, CoNiFe, Co, Fe, CoNi, CoFeB, FeCo, CoCrPt, CoCr, CoCrPt, CoPt, CoPd or their combinations.

13. The magnetic memory device of claim 1, wherein said fixed in-plane anisotropy magnetic layer can be is made of synthetic ferromagnetic layer adjacent to a an antiferromagnetic layer such as CoFe/Ru/CoFe/IrMn, IrMn/CoFe/Ru/CoFe or similar structure.

14. The magnetic memory device of claim 1, wherein said non-magnetic layer can be is made of metallic layer such as Cu, Al, Ru etc, whose thickness is smaller than spin diffusion length of electron at predetermined working temperature of said magnetic memory device in claim 1.

15. The magnetic memory device of claim 1, wherein said non-magnetic layer can be is made of dielectric or semiconductor layer such as AlOx, MgOx, CrOx, ZnOx, TiOx etc, whose thickness and resistance-area product (RA) is are smaller than those of those of said dielectric layer as tunneling barrier.