THROUGH-HOLE VIA INDUCTOR IN A HIGH-FREQUENCY DEVICE

• US 20130271240A1
• Filed: 08/09/2012
• Published: 10/17/2013
• Est. Priority Date: 04/13/2012
• Status: Active Grant

• Current Assignee: Cyntec Co. Ltd. (Delta Electronics Incorporated)
• Original Assignee: Cyntec Co. Ltd. (Delta Electronics Incorporated)
• Inventors: Liu, Chen-Chung, Cheng, Ian-Chun
• Granted Patent: US 9,257,221 B2
• Time in Patent Office: Days
• US Class Current: 333/175
• CPC Class Codes: H01F 17/0013 with stacked layers
• CPC Class Codes: H01F 19/04 Transformers or mutual inductances suitable for handling frequencies considerably beyond the audio range resonant circuits H03H
• CPC Class Codes: H01F 2017/002 Details of via holes for interconnecting the layers
• CPC Class Codes: Y10T 29/49117 Conductor or circuit manufacturing

Abstract

The invention discloses a high-frequency device having a through-hole via inductor in a substrate. The through-hole via inductor has an integral body. The inductance of the through-hole via inductor is greater than that of the horizontal inductor. The through-hole via inductor comprises at least two materials, wherein one of said at least two materials is a conductive material. The present invention also discloses a method for manufacturing the structure of the high-frequency device, wherein the method mainly includes via-drilling and via-filling in the substrate, and lithography process on the substrate.

Claims

1. A high-frequency device, comprising:

a substrate, comprising a first through-hole therein; and

a first through-hole via inductor, disposed in the first through-hole of the substrate.

2. The high-frequency device according to claim 1, wherein the high-frequency device is operated at not less than 1 GHz.

3. The high-frequency device according to claim 2, wherein the high-frequency device is operated substantially at 2.4 GHz.

4. The high-frequency device according to claim 1, further comprising a horizontal inductor on the substrate, wherein the horizontal inductor is electrically connected to the first through-hole via inductor, and the inductance of the first through-hole via inductor is greater than that of the horizontal inductor.

5. The high-frequency device according to claim 4, wherein the resultant inductance of the first through-hole via inductor and the horizontal inductor is substantially equal to the inductance of the first through-hole via inductor.

6. The high-frequency device according to claim 1, wherein the first through-hole via inductor comprises at least two materials, wherein one of said at least two materials is a conductive material.

7. The high-frequency device according to claim 1, wherein the first through-hole via inductor comprises:

a first conductive material overlaying the sidewall of the first through-hole via; and

a second conductive material enclosed by the first conductive material.

8. The high-frequency device according to claim 1, wherein the first through-hole via inductor comprises a conductive material and a non-conductive material enclosed by the conductive material.

9. The high-frequency device according to claim 1, wherein the first through-hole via inductor comprises a first terminal and a second terminal, further comprising a horizontal inductor and a horizontal capacitor disposed on the opposite surfaces of the substrate, wherein the first terminal is electrically connected to the horizontal inductor and the second terminal is electrically connected to the horizontal capacitor.

10. The high-frequency device according to claim 1, wherein the substrate further comprises a second through-hole therein, further comprising:

a second through-hole via inductor, disposed in the second through-hole of the substrate; and

a horizontal inductor disposed on the top surface of the substrate, wherein the horizontal inductor comprises a first terminal and a second terminal, wherein the first terminal is electrically connected to the first through-hole via inductor and the second terminal is electrically connected to the second through-hole via inductor.

11. The high-frequency device according to claim 10, wherein the resultant inductance of the first through-hole via inductor and the second through-hole via inductor is greater than the inductance of the horizontal inductor.

12. The high-frequency device according to claim 10, wherein each of the first through-hole via inductor and the second through-hole via inductor comprises:

a first conductive material overlaying the sidewall of said each of the first through-hole and the second through-hole; and

a second conductive material enclosed by the first conductive material.

13. The high-frequency device according to claim 10, wherein each of the first through-hole via inductor and the second through-hole via inductor comprises a conductive material and a non-conductive material enclosed by the conductive material.

14. The high-frequency device according to claim 10, further comprising a horizontal capacitor on the bottom surface of the substrate, wherein at least one of the first through-hole via inductor and the second through-hole via inductor is electrically connected to the horizontal capacitor.

21. The high-frequency device according to claim 1, wherein the substrate is a ceramic substrate.

22. The high-frequency device according to claim 1, wherein the first through-hole via inductor has an integral body.

15. A method for manufacturing a high-frequency device, the method comprising the steps of:

providing a substrate comprising a first through-hole therein; and

forming a first through-hole via inductor in the first through-hole of the substrate.

16. The method according to claim 15, wherein the substrate further comprises a second through-hole therein, further comprising the steps of:

forming a second through-hole via inductor in the second through-hole of the substrate; and

forming a horizontal inductor on the substrate, wherein the horizontal inductor has a first terminal and a second terminal, wherein the first terminal is electrically connected to the first through-hole via inductor and the second terminal is electrically connected to the second through-hole via inductor.

17. The method according to claim 15, further comprising:

forming a horizontal inductor or a horizontal capacitor on a first surface of the substrate by lithography process, wherein the horizontal inductor or the horizontal capacitor is electrically connected to the first through-hole via inductor.

18. A high-frequency device, comprising:

a substrate having a first through-hole, a second through-hole, a third through-hole and a fourth through-hole therein;

a first U-shape through-hole via inductor, comprising;

a first through-hole via inductor, disposed in the first through-hole of the substrate;

a second through-hole via inductor, disposed in the second through-hole of the substrate; and

a first horizontal inductor disposed on the top surface of the substrate, wherein the first horizontal inductor has a first terminal and a second terminal, wherein the first terminal is electrically connected to the first through-hole via inductor, and the second terminal is electrically connected to the second through-hole via inductor; and

a second U-shape through-hole via inductor, comprising;

a third through-hole via inductor, disposed in the third through-hole of the substrate;

a fourth through-hole via inductor, disposed in the fourth through-hole of the substrate; and

a second horizontal inductor disposed on the top surface of the substrate, wherein the second horizontal inductor has a third terminal and a fourth terminal, wherein the third terminal is electrically connected to the third through-hole via inductor, and the fourth terminal is electrically connected to the fourth through-hole via inductor.

19. The high-frequency device according to claim 18, wherein the resultant inductance of the first through-hole via inductor, the second through-hole via inductor, the third through-hole via inductor and the fourth through-hole via inductor is greater than that of the first horizontal inductor and the second horizontal inductor.

20. The high-frequency device according to claim 18, further comprising a horizontal capacitor on the bottom surface of the substrate, wherein the first through-hole via inductor, the second through-hole via inductor, the third through-hole via inductor and the fourth through-hole via inductor are electrically connected to the horizontal capacitor.