IMAGE-CAPTURING APPARATUS

• US 20130277536A1
• Filed: 06/18/2013
• Published: 10/24/2013
• Est. Priority Date: 12/22/2010
• Status: Active Grant

• Current Assignee: Panasonic Intellectual Property Management Co., Ltd. (Panasonic Holdings Corporation)
• Original Assignee: Panasonic Corporation (Panasonic Holdings Corporation)
• Inventors: MIZUNO, KATSUNORI, MATSUNAGA, YOSHIYUKI, YAMAMOTO, TAKAHIRO
• Granted Patent: US 9,124,827 B2
• Time in Patent Office: Days
• US Class Current: 250/208.1
• CPC Class Codes: H01L 27/1461 characterised by the photosensitive area
• CPC Class Codes: H04N 25/531 by controlling rolling shutters in CMOS SSIS
• CPC Class Codes: H04N 25/533 by using differing integration times for different sensor regions
• CPC Class Codes: H04N 25/585 with pixels having different sensitivities within the sensor, e.g. fast or slow pixels or pixels having different sizes
• CPC Class Codes: H04N 25/59 by controlling the amount of charge storable in the pixel, e.g. modification of the charge conversion ratio of the floating node capacitance
• CPC Class Codes: H04N 25/76 Addressed sensors, e.g. MOS or CMOS sensors
• CPC Class Codes: H04N 25/77 Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components

Abstract

An image-capturing apparatus including a solid-state imaging device including unit-cells arranged in a matrix, in which each of the unit-cells includes a photoelectric conversion unit including: a photoelectric conversion film formed above a semiconductor substrate; a pixel electrode formed on a surface of the photoelectric conversion film, the surface facing the semiconductor substrate; and a transparent electrode formed on a surface of the photoelectric conversion film, the surface being opposite the surface on which the pixel electrode is formed, and the image-capturing apparatus further includes: a voltage applying unit which applies, between the pixel electrode and the transparent electrode, a variable sensitivity voltage for controlling sensitivity of the solid-state imaging device; a level detecting unit which detects an output level of image-captured image data from the solid-state imaging device; and a controlling unit which varies the variable sensitivity voltage based on the output level detected by the level detecting unit.

Claims

1. An image-capturing apparatus comprising

a solid-state imaging device including a plurality of unit-cells arranged in a matrix,

wherein each of the unit-cells includes a photoelectric conversion unit,

the photoelectric conversion unit includes:

a photoelectric conversion film formed above a semiconductor substrate;

a pixel electrode formed on a surface of the photoelectric conversion film, the surface facing the semiconductor substrate; and

a transparent electrode formed on a surface of the photoelectric conversion film, the surface being opposite the surface on which the pixel electrode is formed, and

the image-capturing apparatus further comprises;

a voltage applying unit configured to apply, between the pixel electrode and the transparent electrode, a variable sensitivity voltage for controlling sensitivity of the solid-state imaging device;

a level detecting unit configured to detect an output level of image-captured image data from the solid-state imaging device; and

a controlling unit configured to vary the variable sensitivity voltage based on the output level detected by the level detecting unit.

2. The image-capturing apparatus according to claim 1,

wherein the solid-state imaging device further includes vertical signal lines each of which is provided corresponding to a column of the unit-cells and transmits signal voltages of the unit-cells in the corresponding column,

each of the unit-cells further includes an amplifier transistor, a selection transistor, and a reset transistor,

the amplifier transistor is connected between a corresponding one of the vertical signal lines and a power line, and has a gate connected to the pixel electrode,

the reset transistor is connected to the pixel electrode, and resets electrical potential of the pixel electrode, and

the selection transistor is connected between the amplifier transistor and the vertical signal line, or between the amplifier transistor and the power line.

3. The image-capturing apparatus according to claim 2,

wherein the unit-cell further includes a constant bias transistor, and

the constant bias transistor is connected to the pixel electrode and the gate of the amplifier transistor, and has a gate connected to a constant bias power source.

4. The image-capturing apparatus according to claim 3,

wherein the controlling unit is further configured to vary a voltage of the constant bias power source based on the output level detected by the level detecting unit.

5. The image-capturing apparatus according to claim 1, further comprising

an electronic shutter controlling unit configured to control an operation of an electronic shutter in the solid-state imaging device,

wherein the controlling unit is further configured to:

vary an accumulation time period during which electric charges are accumulated, by varying timing of the electronic shutter based on the output level detected by the level detecting unit, the electric charges generated in the photoelectric conversion film in response to light incident on the solid-state imaging device; and

determine whether to operate under a first driving mode or a second driving mode based on the output level detected by the level detecting unit, the first driving mode being a mode in which the variable sensitivity voltage is varied while the accumulation time period is fixed, the second driving mode being a mode in which the accumulation time period and the variable sensitivity voltage are varied.

6. The image-capturing apparatus according to claim 1, further comprising

an electronic shutter controlling unit configured to control an operation of an electronic shutter in the solid-state imaging device,

wherein the controlling unit is further configured to vary an accumulation time period during which electric charges are accumulated, by varying timing of the electronic shutter based on the output level detected by the level detecting unit, the electric charges generated in the photoelectric conversion film in response to light incident on the solid-state imaging device.