LIGHT EMITTING DIODE DEVICE

• US 20130277697A1
• Filed: 02/27/2013
• Published: 10/24/2013
• Est. Priority Date: 04/18/2012
• Status: Active Grant

• Current Assignee: Genesis Photonics Inc.
• Original Assignee: Genesis Photonics Inc.
• Inventors: Li, Yu-Chu, Wu, Jyun-De, Liao, Kuan-Yung, Lai, Yen-Lin, Wang, Shen-Jie, Lin, Ching-Liang
• Granted Patent: US 8,766,307 B2
• Time in Patent Office: Days
• US Class Current: 257/98
• CPC Class Codes: H01L 2933/0091 Scattering means in or on the semiconductor body or semiconductor body package H01L33/22 takes precedence
• CPC Class Codes: H01L 33/20 with a particular shape, e.g. curved or truncated substrate
• CPC Class Codes: H01L 33/60 Reflective elements

Abstract

A light emitting diode device includes an epitaxial substrate, at least one passivation structure, at least one void, a semiconductor layer, a first type doping semiconductor layer, a light-emitting layer and a second type doping semiconductor layer. The passivation structure is disposed on the epitaxial substrate and has an outer surface. The void is located at the passivation structure and at least covering 50% of the outer surface of the passivation structure. The semiconductor layer is disposed on the epitaxial substrate and encapsulating the passivation structure and the void. The first type doping semiconductor layer is disposed on the semiconductor layer. The light-emitting layer is disposed on the first type doping semiconductor layer. The second type doping semiconductor layer is disposed on the light emitting layer.

Claims

1. A light emitting diode device comprising:

an epitaxial substrate;

at least one passivation structure disposed on the epitaxial substrate and having an outer surface;

at least one void located on the passivation structure and at least covering 50% of the outer surface of the passivation structure;

a semiconductor layer disposed on the epitaxial substrate and encapsulating the passivation structure and the void;

a first type doping semiconductor layer disposed on the semiconductor layer;

a light-emitting layer disposed on the first type doping semiconductor layer; and

a second type doping semiconductor layer disposed on the light-emitting layer.

2. The light emitting diode device as recited in claim 1, wherein a material of the passivation structure is silicon dioxide or aluminium nitride.

3. The light emitting diode device as recited in claim 1, wherein the at least one passivation structure is a plurality of passivation structures, the at least one void is a plurality of voids, the passivation structures are not connected to each other and are arranged with equal spacing on the epitaxial substrate, and the voids are respectively located on the passivation structures.

4. The light emitting diode device as recited in claim 3, wherein the spacing between two adjacent passivation structures is somewhere in between 1.5 microns to 3.5 microns.

5. The light emitting diode device as recited in claim 3, wherein the coverage rate of the outer surfaces of the passivation structures covering by the voids is less than an outer diameter/spacing ratio of each of the passivation structures.

6. The light emitting diode device as recited in claim 1, wherein the outer diameter of the passivation structure is somewhere in between 1.3 microns to 2.8 microns.

7. The light emitting diode device as recited in claim 1, wherein the height of the passivation structure is somewhere in between 0.5 microns to 2.0 microns.

8. The light emitting diode device as recited in claim 1, wherein the cross-sectional appearance of the passivation structure comprises rectangle, semicircle, triangle, trapezoid, bullet-shape, dome-shape, wavy-shape, or zigzag-shape.

9. The light emitting diode device as recited in claim 1, wherein the passivation structure comprises a protrusion portion and a passivation layer, the protrusion portion is disposed on the epitaxial substrate, the passivation layer is disposed on at least one side of the protrusion portion and in contract with the protrusion portion, a material of the protrusion portion is sapphire, and a material of the passivation layer is silicon dioxide or aluminium nitride.

10. The light emitting diode device as recited in claim 9, wherein the passivation layer is encapsulating the protrusion portion.

11. The light emitting diode device as recited in claim 9, wherein the cross-sectional appearance of the protrusion portion comprises rectangle, semicircle, triangle, trapezoid, bullet-shape, dome-shape, wavy-shape, or zigzag-shape, and the passivation structure and the protrusion portion are conformally disposed.

12. The light emitting diode device as recited in claim 1, wherein the epitaxial substrate is a sapphire substrate.

13. The light emitting diode device as recited in claim 1, wherein the first type doping semiconductor layer is N type doping semiconductor layer, and the second type doping semiconductor layer is P type doping semiconductor layer.

14. The light emitting diode device as recited in claim 1, wherein materials of the first type doping semiconductor layer and the second type doping semiconductor layer are composed of doping at least one of gallium nitride, aluminium gallium nitride, InGaN, AlInGaN with the group II or group IV element.

15. The light emitting diode device as recited in claim 1 further comprising:

a first electrode disposed on the first type doping semiconductor layer and electrically connected with the first type doping semiconductor layer; and

a second electrode disposed on the second type doping semiconductor layer and electrically connected with the second type doping semiconductor layer.