MICROELECTROMECHANICAL PRESSURE SENSOR INCLUDING REFERENCE CAPACITOR
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Accused Products
Abstract
This document discusses, among other things, an apparatus including a silicon die including a vibratory diaphragm, the die having a silicon die top opposite a silicon die bottom, with a top silicon die port extending from the silicon die top through the silicon die to a top of the vibratory diaphragm, and with a bottom silicon die port extending from the silicon die bottom to a bottom of the vibratory diaphragm, wherein the bottom silicon die port has a cross sectional area that is larger than a cross-sectional area of the top silicon die port, a capacitor electrode disposed along a bottom of the silicon die, across the bottom silicon die port, the capacitor electrode including a first signal generation portion that is coextensive with the top silicon die port, and a second signal generation portion surrounding the first portion.
44 Citations
92 Claims
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1-72. -72. (canceled)
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73. An apparatus comprising:
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a silicon die including a vibratory diaphragm, the die having a silicon die top opposite a silicon die bottom, with a top silicon die port extending from the silicon die top through the silicon die to a top of the vibratory diaphragm, and with a bottom silicon die port extending from the silicon die bottom to a bottom of the vibratory diaphragm, wherein the bottom silicon die port has a cross sectional area that is larger than a cross-sectional area of the top silicon die port; a capacitor electrode disposed along a bottom of the silicon die, across the bottom silicon die port, the capacitor electrode including a first signal generation portion that is coextensive with the top silicon die port, and a second signal generation portion surrounding the first portion. - View Dependent Claims (74, 75, 76, 77, 78)
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79. An apparatus comprising:
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a silicon die including a vibratory diaphragm, the die having a silicon die top opposite a silicon die bottom, with a top silicon die port extending from the silicon die top through the silicon die to a top of the vibratory diaphragm, and with a bottom silicon die port extending from the silicon die bottom to a bottom of the vibratory diaphragm, wherein the bottom silicon die port has a cross sectional area that is larger than a cross-sectional area of the top silicon die port; a capacitor electrode disposed along a bottom of the silicon die, across the bottom silicon die port, the capacitor electrode including a first signal generation portion that is coextensive with the top silicon die port, and a second signal generation portion surrounding the first portion, wherein the capacitor electrode is disposed on a substrate, wherein the substrate includes an integrated circuit. - View Dependent Claims (80, 81, 82, 83, 84, 85)
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86. A method, comprising:
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forming a top portion of a silicon die with a silicon die port extending through to a vibratory membrane; forming a bottom portion of the silicon die with vias extending through; coupling the top portion to the bottom portion to define a cavity; forming a capacitor electrode onto the bottom of the coupled top portion and bottom portion, the capacitor electrode extending over at least one via; and forming a first signal generation portion in the capacitor electrode, coextensive with the top silicon die port; and forming a second signal generation portion in the capacitor electrode extending around the first signal generation portion. - View Dependent Claims (87, 88, 89, 90, 91, 92)
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Specification