Semiconductor Method and Device of Forming a Fan-Out Device with PWB Vertical Interconnect Units
First Claim
1. A method of making a semiconductor device, comprising:
- providing a semiconductor die;
disposing a modular interconnect unit adjacent to the semiconductor die;
depositing an encapsulant over the semiconductor die and modular interconnect unit;
forming a first insulating layer over the semiconductor die and modular interconnect unit;
forming a plurality of openings in the first insulating layer over the modular interconnect unit; and
depositing a conductive layer over the first insulating layer.
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Accused Products
Abstract
A semiconductor device has a modular interconnect unit or interconnect structure disposed in a peripheral region of the semiconductor die. An encapsulant is deposited over the semiconductor die and interconnect structure. A first insulating layer is formed over the semiconductor die and interconnect structure. A plurality of openings is formed in the first insulating layer over the interconnect structure. The openings have a pitch of 40 micrometers. The openings include a circular shape, ring shape, cross shape, or lattice shape. A conductive layer is deposited over the first insulating layer. The conductive layer includes a planar surface. A second insulating layer is formed over the conductive layer. A portion of the encapsulant is removed to expose the semiconductor die and the interconnect structure. The modular interconnect unit includes a vertical interconnect structure. The modular interconnect unit forms part of an interlocking pattern around the semiconductor die.
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Citations
25 Claims
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1. A method of making a semiconductor device, comprising:
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providing a semiconductor die; disposing a modular interconnect unit adjacent to the semiconductor die; depositing an encapsulant over the semiconductor die and modular interconnect unit; forming a first insulating layer over the semiconductor die and modular interconnect unit; forming a plurality of openings in the first insulating layer over the modular interconnect unit; and depositing a conductive layer over the first insulating layer. - View Dependent Claims (2, 3, 4, 5, 6)
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7. A method of making a semiconductor device, comprising:
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providing a semiconductor die; disposing an interconnect structure in a peripheral region of the semiconductor die; forming a first insulating layer over the semiconductor die and interconnect structure; forming a first opening in the first insulating layer over the interconnect structure; and forming a conductive layer over the first insulating layer. - View Dependent Claims (8, 9, 10, 11, 12, 13)
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14. A semiconductor device, comprising:
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a semiconductor die; an interconnect structure disposed in a peripheral region of the semiconductor die; a first insulating layer including a plurality of openings formed over the interconnect structure; and a conductive layer formed over the first insulating layer. - View Dependent Claims (15, 16, 17, 18, 19)
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20. A semiconductor device, comprising:
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a semiconductor die; an interconnect structure disposed in a peripheral region of the semiconductor die; and a first insulating layer formed over the semiconductor die and interconnect structure including a first opening over the interconnect structure. - View Dependent Claims (21, 22, 23, 24, 25)
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Specification