SEMICONDUCTOR DEVICE
First Claim
1. A method for manufacturing a semiconductor device comprising the steps of:
- forming an oxide semiconductor film over a substrate;
forming a silicon nitride film over the oxide semiconductor film;
forming a silicon oxide film over the silicon nitride film;
removing part of the silicon oxide film;
forming a conductive film having a light-transmitting property over the silicon oxide film;
forming a resist mask using a multi-tone mask over the oxide semiconductor film, andashing the resist mask to reduce the resist mask in size.
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Accused Products
Abstract
A semiconductor device includes an oxide semiconductor layer provided over a substrate having an insulating surface; a gate insulating film covering the oxide semiconductor layer; a first conductive layer and a second conductive layer laminated in this order over the gate insulating film; an insulating film covering the oxide semiconductor layer and a gate wiring including a gate electrode (the first and second conductive layers); and a third conductive layer and a fourth conductive layer laminated in this order over the insulating film and electrically connected to the oxide semiconductor layer. The gate electrode is formed using the first conductive layer. The gate wiring is formed using the first conductive layer and the second conductive layer. A source electrode is formed using the third conductive layer. A source wiring is formed using the third conductive layer and the fourth conductive layer.
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Citations
18 Claims
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1. A method for manufacturing a semiconductor device comprising the steps of:
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forming an oxide semiconductor film over a substrate; forming a silicon nitride film over the oxide semiconductor film; forming a silicon oxide film over the silicon nitride film; removing part of the silicon oxide film; forming a conductive film having a light-transmitting property over the silicon oxide film; forming a resist mask using a multi-tone mask over the oxide semiconductor film, and ashing the resist mask to reduce the resist mask in size. - View Dependent Claims (2, 3, 4, 5, 6)
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7. A method for manufacturing a semiconductor device comprising the steps of:
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forming an oxide semiconductor film over a substrate; forming a copper film over the oxide semiconductor film; forming a resist mask using a multi-tone mask over the copper film; etching the copper film using the resist mask to form a copper electrode; ashing the resist mask to reduce the resist mask in size; forming a first insulating film over the copper electrode; forming a second insulating film over the first insulating film; removing part of the second insulating film; and forming a conductive film having a light-transmitting property over the second insulating film. - View Dependent Claims (8, 9, 10, 11, 12)
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13. A method for manufacturing a semiconductor device comprising the steps of:
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forming an oxide semiconductor film over a substrate; forming a copper film over the oxide semiconductor film; forming a resist mask using a multi-tone mask over the copper film; etching the copper film using the resist mask to form a copper electrode; ashing the resist mask to reduce the resist mask in size; forming a silicon nitride film over the copper electrode; forming an insulating film over the silicon nitride film; removing part of the insulating film; and forming a conductive film having a light-transmitting property over the insulating film. - View Dependent Claims (14, 15, 16, 17, 18)
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Specification