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METHODS OF FORMING BULK FINFET DEVICES SO AS TO REDUCE PUNCH THROUGH LEAKAGE CURRENTS

  • US 20130280883A1
  • Filed: 04/24/2012
  • Published: 10/24/2013
  • Est. Priority Date: 04/24/2012
  • Status: Active Grant
First Claim
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1. A method of forming a FinFET device, comprising:

  • forming a plurality of trenches in a semiconducting substrate to thereby define a plurality of spaced-apart fins in a semiconducting substrate;

    forming a doped layer of insulating material in said trenches, wherein an exposed portion of each of said fins extends above an upper surface of said doped layer of insulating material while a covered portion of each of said fins is positioned below said upper surface of said doped layer of insulating material; and

    performing at least one process operation to heat at least said doped layer of insulating material to cause a dopant material in said doped layer of insulating material to migrate from said doped layer of insulating material into said covered portions of said fins and thereby define a doped region in said covered portions of said fins that is positioned under said exposed portions of said fins.

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