SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF THE SAME

• US 20130285000A1
• Filed: 03/05/2013
• Published: 10/31/2013
• Est. Priority Date: 04/27/2012
• Status: Abandoned Application

• Current Assignee: Kabushiki Kaisha Toshiba (Toshiba Corporation)
• Original Assignee: Kabushiki Kaisha Toshiba (Toshiba Corporation)
• Inventors: ARAI, Shinya
• Application Number:
  US13/786,327
• Publication Number:
  US 20130285000A1
• Time in Patent Office: Days
• US Class Current: 257/3
• CPC Class Codes: H10N 70/066 by filling of openings, e.g. damascene method
• CPC Class Codes: H10N 70/231 based on solid-state phase change, e.g. between amorphous and crystalline phases, Ovshinsky effect
• CPC Class Codes: H10N 70/826 adapted for essentially vertical current flow, e.g. sandwich or pillar type devices
• CPC Class Codes: H10N 70/8413 adapted for resistive heating
• CPC Class Codes: H10N 70/861 Thermal details
• CPC Class Codes: H10N 70/8828 Tellurides, e.g. GeSbTe

Abstract

According to one embodiment, the semiconductor device includes a substrate, and an interlayer insulating film that is provided with a plug hole, formed on the substrate. Additionally, the device includes a plug layer formed within the plug hole, a heater layer formed on the plug layer within the plug hole, and a phase change film formed on the heater layer within the plug hole. The device additionally includes a wiring layer formed on the phase change film and the interlayer insulating film.

Claims

1. A semiconductor device, comprising:

a substrate;

an interlayer insulating film disposed on the substrate, the interlayer insulating film having a plug hole disposed therein;

a plug layer disposed within the plug hole;

a heater layer disposed on the plug layer within the plug hole;

a phase change film disposed on the heater layer within the plug hole; and

a wiring layer disposed on the phase change film and the interlayer insulating film.

2. The semiconductor device according to claim 1, wherein

a lateral surface of the phase change film is in contact with a lateral surface of the plug hole.

3. The semiconductor device according to claim 1, wherein an area of a bottom surface of the heater layer is smaller than an area of an upper surface of the plug layer.

4. The semiconductor device according to claim 1, further comprising:

an insulating film disposed on a lateral surface of the plug hole above the plug layer,

wherein the heater layer and the phase change film are disposed on the insulating film within the plug hole.

5. The semiconductor device according to claim 4, wherein a thermal conductivity of the insulating film is less than or equal to a thermal conductivity of the interlayer insulating film.

6. The semiconductor device according to claim 4, wherein the heater layer is disposed between an upper surface of the plug layer and a bottom surface of the phase change film, and in between a lateral surface of the insulation film and a lateral surface of the phase change film.

7. The semiconductor device according to claim 4, wherein an area of a bottom surface of the heater layer is smaller than an area of an upper surface of the plug layer.

8. The semiconductor device according to claim 1, wherein the heater layer is disposed between an upper surface of the plug layer and a bottom surface of the phase change film, and between a lateral surface of the plug hole and a lateral surface of the phase change film.

9. The semiconductor device according to claim 4, wherein the insulating film comprises two or more layers.

10. The semiconductor device according to claim 1, wherein an outer edge of an upper surface of the plug layer is substantially aligned with an outer edge of a bottom surface of the heater layer, and an outer edge of an upper surface of the heater layer is substantially aligned with an outer edge of a bottom surface of the phase change film.

11. The semiconductor device of claim 1, wherein the phase change layer is a chalcogenide film.

12. The semiconductor device of claim 1, wherein the plug hole is a via hole, and the plug layer includes a barrier metal layer.

13. A semiconductor device, comprising:

a semiconductor substrate;

an interlayer insulating film disposed on the semiconductor substrate, the interlayer insulating film including a plug hole formed therein

a plug layer disposed within the plug hole;

a heater layer disposed on the plug layer within the plug hole;

a phase change film disposed on the heater layer within the plug hole;

a wiring layer disposed on the phase change film and the interlayer insulating film; and

an insulating film disposed on a lateral surface of the plug hole above the plug layer;

wherein

the heater layer and the phase change film are disposed within the plug hole on the insulating film,

a bottom surface of the phase change film is in contact with an upper surface of the heater layer;

a lateral surface of the phase change film is in contact with the insulating film; and

a thermal conductivity of the insulating film is less than or equal to a thermal conductivity of the interlayer insulating film.

14. The semiconductor device according to claim 13, wherein the insulating film comprises two or more layers.

15. The semiconductor device according to claim 13, wherein the plug layer comprises a barrier metal layer.

16. The semiconductor device according to claim 13, wherein the phase change film is a germanium-antimony-tellurium (GeSbTe) film.

17. A manufacturing method of a semiconductor device, comprising:

forming an interlayer insulating film on a semiconductor substrate;

forming a plug hole in the interlayer insulating film;

forming a plug layer within the plug hole;

forming a heater layer within the plug hole on the plug layer;

forming a phase change film within the plug hole on the heater layer; and

forming a wiring layer on the phase change film and the interlayer insulating film.

18. The manufacturing method of claim 17, further comprising:

forming an insulating layer on a lateral surface of the plug hole above the plug layer.

19. The manufacturing method of claim 17, wherein forming the heater layer within the plug hole on the plug layer includes removing portions of the heater layer deposited on a lateral surface of the plug hole.

20. The manufacturing method of claim 17, wherein forming the wiring layer on the phase change film and the interlayer insulating film involves a damascene process.