SEMICONDUCTOR LIGHT-EMITTING ELEMENT
First Claim
1. A semiconductor light-emitting element comprising:
- a laminated semiconductor layer in which an n-type semiconductor layer, a light-emitting layer and a p-type semiconductor layer are laminated;
a transparent conductive layer that is laminated on the p-type semiconductor layer of the laminated semiconductor layer and is composed of a metal oxide having optical transparency to light emitted from the light-emitting layer;
an insulating reflection layer that is laminated on the transparent conductive layer, in which a plurality of opening portions are provided to expose part of the transparent conductive layer;
a metal reflection layer that is formed on the insulating reflection layer and inside the opening portions of the insulating reflection layer, and is composed of a metal containing aluminum; and
a metal contact layer that is formed at least between the part of the transparent conductive layer exposed at the opening portion and part of the metal reflection layer formed inside the opening portion, and contains an element selected from Group VIA and Group VIII of a periodic table.
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Accused Products
Abstract
A semiconductor light-emitting element includes: a laminated semiconductor layer in which an n-type semiconductor layer, a light-emitting layer and a p-type semiconductor layer are laminated; a transparent conductive layer laminated on the p-type semiconductor layer of the laminated semiconductor layer and composed of a metal oxide having optical transparency to light emitted from the light-emitting layer; an insulating reflation layer laminated on the transparent conductive layer in which plural opening portions are provided to expose part of the transparent conductive layer; a metal reflection layer formed on the insulating reflection layer and inside the opening portions and composed of a metal containing aluminum; and a metal contact layer provided between the part of the transparent conductive layer exposed at the opening portion and the part of the metal reflection layer formed inside the opening portion, which contains an element selected from Group VIA and Group VIII of a periodic table.
21 Citations
16 Claims
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1. A semiconductor light-emitting element comprising:
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a laminated semiconductor layer in which an n-type semiconductor layer, a light-emitting layer and a p-type semiconductor layer are laminated; a transparent conductive layer that is laminated on the p-type semiconductor layer of the laminated semiconductor layer and is composed of a metal oxide having optical transparency to light emitted from the light-emitting layer; an insulating reflection layer that is laminated on the transparent conductive layer, in which a plurality of opening portions are provided to expose part of the transparent conductive layer; a metal reflection layer that is formed on the insulating reflection layer and inside the opening portions of the insulating reflection layer, and is composed of a metal containing aluminum; and a metal contact layer that is formed at least between the part of the transparent conductive layer exposed at the opening portion and part of the metal reflection layer formed inside the opening portion, and contains an element selected from Group VIA and Group VIII of a periodic table. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16)
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Specification