MAGNETIC BODY DEVICE AND MANUFACTURING METHOD THEREOF

• US 20130285176A1
• Filed: 04/16/2013
• Published: 10/31/2013
• Est. Priority Date: 04/27/2012
• Status: Active Grant

• Current Assignee: Renesas Electronics Corporation
• Original Assignee: Renesas Electronics Corporation
• Inventors: SUEMITSU, Katsumi, KARIYADA, Eiji, SUZUKI, Tetsuhiro
• Granted Patent: US 8,729,648 B2
• Time in Patent Office: Days
• US Class Current: 257/421
• CPC Class Codes: G11C 11/16 using elements in which the storage effect is based on magnetic spin effect
• CPC Class Codes: G11C 11/161 details concerning the memory cell structure, e.g. the layers of the ferromagnetic memory cell
• CPC Class Codes: G11C 11/1655 Bit-line or column circuits
• CPC Class Codes: G11C 11/1659 Cell access
• CPC Class Codes: G11C 11/1673 Reading or sensing circuits or methods
• CPC Class Codes: G11C 11/1675 Writing or programming circuits or methods
• CPC Class Codes: G11C 11/18 using Hall-effect devices
• CPC Class Codes: H10N 50/01 Manufacture or treatment
• CPC Class Codes: H10N 50/10 Magnetoresistive devices
• CPC Class Codes: H10N 50/80 Constructional details

Abstract

A magnetic body device has a stacked structure comprising an underlying layer, a magnetic body layer, and a cap layer. The material for the underlying layer is different from that for the cap layer. The magnetic body layer has a free magnetization region having perpendicular magnetic anisotropy and a first characteristic change region and a second characteristic change region situated on both sides of the free magnetization region in a first in-plane direction. The perpendicular magnetic anisotropy of the first characteristic change region and the second characteristic change region is at a level lower than that of the free magnetization region. An external magnetic field containing a component in the first in-plane direction is applied to the free magnetization region. Further, a current in the first in-plane direction is supplied to the free magnetization region.

Claims

1. A magnetic body device comprising:

an underlying layer;

a cap layer formed of a material different from that of the underlying layer;

a magnetic body layer in contact at the lower surface with the underlying layer and in contact at the upper surface with the cap layer; and

a pair of current terminals for supplying a current to the underlying layer and the magnetic body layer, wherein

the magnetic body layer has

a free magnetization region having a perpendicular magnetic anisotropy and

a first characteristic change region and a second characteristic change region situated on both sides of the free magnetization region in a first in-plane direction,

perpendicular magnetic anisotropy of the first characteristic change region and the second characteristic change region is lower than that of the free magnetization region,

an external magnetic field containing a component in the first-plane direction is applied to the free magnetization region,

the underlying layer has

a first underlying region in contact with the lower surface of the first characteristic change region and

a second underlying region in contact with the lower surface of the second characteristic change region, and

the pair of current terminals is coupled to the first underlying region and the second underlying region respectively.

2. The magnetic body device according to claim 1, further comprising:

a reference layer having a perpendicular magnetic anisotropy with the magnetization direction being pinned, wherein

the cap layer is a tunnel barrier layer, and

the reference layer is coupled by way of the tunnel burrier layer to the free magnetization region.

3. The magnetic body device according to claim 1, wherein

each of the first characteristic change region and the second characteristic change region has magnetization containing a component in the first in-plane direction, and

the external magnetic field applied to the free magnetization region is produced by the first characteristic change region and the second characteristic change region.

4. The magnetic body device according to claim 1, further comprising:

a first magnetization hard layer provided below the first underlying region and having a first pinned magnetization; and

a second magnetization hard layer provided below the second underlying region and having a second pinned magnetization, wherein

the respective directions of the first pinned magnetization and the second pinned magnetization are defined such that the external magnetic field applied to the free magnetization region is produced by the first pinned magnetization and the second pinned magnetization.

5. The magnetic body device according to claim 4, wherein

both of the first pinned magnetization and the second pinned magnetization contain a component in the first in-plane direction.

6. The magnetic body device according to claim 4, wherein

the first pinned magnetization contains a component in a first perpendicular direction, and

the second pinned magnetization contains a component in a second perpendicular direction opposing the first perpendicular direction.

7. The magnetic body device according to claim 4, wherein

the first characteristic change region and the second characteristic change region have no magnetization.

8. The magnetic body device according to claim 1, wherein

the thickness of the underlying layer is less than the thickness of the magnetic body layer.

9. A method of manufacturing a magnetic body device comprising:

(A) forming an underlying layer coupled to a pair of current terminals in which

the pair of current terminals are spaced apart in a first in-plane direction and coupled to a first underlying region and a second underlying region of the underlying layer respectively,

(B) forming a magnetic body layer having perpendicular magnetic anisotropy over the underlying layer in which

the magnetic body layer has

a first region in contact with the first underlying region,

a second region in contact with the second underlying region, and

a third region put between the first region and the second region,

(C) forming a cap layer over the magnetic body, in which

the material for the cap layer is different from the material for the underlying layer, and

(D) making the perpendicular magnetic anisotropy of the first region and the second region to a level lower than that of the third region.

10. The method of manufacturing the magnetic body device according to claim 9, further comprising:

forming a perpendicular magnetization film over the cap layer, and

etching the perpendicular magnetization film by using a mask covering the third region, thereby forming a reference layer coupled by way of the cap layer to the third region.

11. The method of manufacturing the magnetic body device according to claim 10, wherein

a region of the cap layer not covered by the mask is subjected to the etching, thereby making the perpendicular magnetic anisotropy of the first region and the second region to a level lower than that of the third region.

12. The method of manufacturing the magnetic body device according to claim 10, wherein

a gas containing an alcohol is used in the etching.