Using Customized Lens Pupil Optimization to Enhance Lithographic Imaging in a Source-Mask Optimization Scheme

• US 20130286369A1
• Filed: 04/25/2012
• Published: 10/31/2013
• Est. Priority Date: 04/25/2012
• Status: Active Grant

• Current Assignee: Nikon Corporation
• Original Assignee: Nikon Corporation
• Inventors: Flagello, Donis G.
• Granted Patent: US 10,133,184 B2
• Time in Patent Office: Days
• US Class Current: 355/55
• CPC Class Codes: G03F 7/70125 Use of illumination settings tailored to particular mask patterns details of setting means G03F7/70091
• CPC Class Codes: G03F 7/70433 Layout for increasing efficiency or for compensating imaging errors, e.g. layout of exposure fields for reducing focus errors; Use of mask features for increasing efficiency or for compensating imaging errors
• CPC Class Codes: G03F 7/705 Modelling or simulating from physical phenomena up to complete wafer processes or whole workflow in wafer productions

Abstract

A process for use in configuring a projection optics lithography system comprising providing a determination of pupil amplitude and phase optimization for the projection optics, for use in configuring the projection optics in accordance with the determination.

Claims

1. A process for use in configuring a projection optics lithography system comprising providing a determination of pupil amplitude and phase optimization for the projection optics, for use in configuring the projection optics in accordance with the determination.

2. The process of claim 1, wherein the determination of pupil amplitude and phase optimization is provided as part of a source mask optimization process, which also provides optimization of either or both of the source or the mask of the projection optics system.

3. The process of claim 1, wherein the determination of pupil amplitude and phase optimization is produced using source mask optimization principles.

4. The process of claim 3, wherein the determination of pupil amplitude and phase optimization is produced with either or both of the source shape and Fourier transform of the mask spectrum assumed fixed.

5. The process of claim 3, wherein either or both of the source shape and/or the Fourier transform of the mask spectrum are also variables that are determined as part of the optimization process.