HIGH EFFICIENCY LIGHT EMITTING DIODE
First Claim
1. A light emitting diode comprising:
- a substrate;
a semiconductor stack disposed on the substrate, the semiconductor stack comprising a p-type compound semiconductor layer, an active layer, and an n-type compound semiconductor layer;
a reflective metal layer disposed between the substrate and the semiconductor stack and in ohmic contact with the p-type compound semiconductor layer, the reflective metal layer comprising a groove exposing a portion of the semiconductor stack;
a first electrode pad disposed on the n-type compound semiconductor layer;
an electrode extension extending from the first electrode pad and disposed over the groove; and
a first insulating layer disposed between a side surface of the first electrode pad and a side surface of the semiconductor stack,wherein the n-type compound semiconductor layer comprises an n-type contact layer, andwherein the n-type contact layer has an Si doping concentration of 5 to 7×
1018/cm3 and a thickness in the range of 5 to 10 um.
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Accused Products
Abstract
Disclosed herein is a high efficiency light emitting diode. The light emitting diode includes: a semiconductor stack positioned over a support substrate; a reflective metal layer positioned between the support substrate and the semiconductor stack to ohmic-contact a p-type compound semiconductor layer of the semiconductor stack and having a groove exposing the semiconductor stack; a first electrode pad positioned on an n-type compound semiconductor layer of the semiconductor stack; an electrode extension extending from the first electrode pad and positioned over the groove region; and an upper insulating layer interposed between the first electrode pad and the semiconductor stack. In addition, the n-type compound semiconductor layer includes an n-type contact layer, and the n-type contact layer has a Si doping concentration of 5 to 7×1018/cm3 and a thickness in the range of 5 to 10 um.
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Citations
21 Claims
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1. A light emitting diode comprising:
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a substrate; a semiconductor stack disposed on the substrate, the semiconductor stack comprising a p-type compound semiconductor layer, an active layer, and an n-type compound semiconductor layer; a reflective metal layer disposed between the substrate and the semiconductor stack and in ohmic contact with the p-type compound semiconductor layer, the reflective metal layer comprising a groove exposing a portion of the semiconductor stack; a first electrode pad disposed on the n-type compound semiconductor layer; an electrode extension extending from the first electrode pad and disposed over the groove; and a first insulating layer disposed between a side surface of the first electrode pad and a side surface of the semiconductor stack, wherein the n-type compound semiconductor layer comprises an n-type contact layer, and wherein the n-type contact layer has an Si doping concentration of 5 to 7×
1018/cm3 and a thickness in the range of 5 to 10 um. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10)
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11. A light emitting diode, comprising:
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a substrate; a semiconductor stack disposed on the substrate, the semiconductor stack comprising a p-type compound semiconductor layer, an active layer, and an n-type compound semiconductor layer; a reflective metal layer disposed between the substrate and the semiconductor stack and in ohmic contact with the p-type compound semiconductor layer, the reflective metal layer and comprising a groove exposing a portion of the semiconductor stack; a first electrode pad disposed on the n-type compound semiconductor layer; an electrode extension extending from the first electrode pad and disposed over the groove; and a first insulating layer disposed between a side surface of the first electrode pad and a side surface the semiconductor stack, wherein the n-type compound semiconductor layer comprises an n-type contact layer and a first recovering layer disposed between the n-type contact layer and the active layer, wherein the first recovering layer comprises an undoped layer or a low doped layer comprising a doping concentration lower than that of the n-type contact layer, and wherein the n-type contact layer has a thickness in the range of 4.5 to 10 um. - View Dependent Claims (12, 13, 14, 15, 16, 17, 18, 19, 20, 21)
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Specification