LIGHT-EMITTING DIODE STRUCTURE AND METHOD FOR MANUFACTURING THE SAME
First Claim
1. A light-emitting diode (LED) structure, comprising:
- an insulation substrate;
a plurality of LED chips, wherein each of the LED chips comprises an epitaxial layer, the epitaxial layer comprises a first conductivity type semiconductor layer, an active layer, and a second conductivity type semiconductor layer sequentially stacked on a surface of the insulation substrate, wherein each of the LED chips comprises a mesa structure and an exposed portion of the first conductivity type semiconductor layer adjacent to each other, wherein a first isolation trench is defined by two adjacent LED chips in a first direction, and wherein the first isolation trench is disposed in the mesa structure;
a plurality of interconnection layers, connecting two adjacent LED chips of the LED chips, respectively;
a first conductive type electrode pad and a second conductive type electrode pad, disposed on a first LED chip and a second LED chip of the LED chips, respectively, and electrically connected to the exposed portion of the first conductivity type semiconductor layer of the first LED chip and the second conductivity type semiconductor layer of the second LED chip, respectively;
a reflective insulating layer, covering the interconnection layers, the mesa structures, the first conductive type electrode pad, and the second conductive type electrode pad, wherein the reflective insulating layer has at least one first penetration hole and at least one second penetration hole exposing a portion of the first conductive type electrode pad and a portion of the second conductive type electrode pad, respectively;
a first conductive type bonding pad, located on a portion of the reflective insulating layer, and electrically connected to the first conductive type electrode pad through the at least one first penetration hole; and
a second conductive type bonding pad, located on another portion of the reflective insulating layer, separated from the first conductive type bonding pad, and electrically connected to the second conductive type electrode pad through the at least one second penetration hole.
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Abstract
A light-emitting diode (LED) structure includes an insulation substrate; LED chips each includes an epitaxial layer having a first conductivity type semiconductor layer, an active layer, and a second conductivity type semiconductor layer stacked on the insulation substrate, and comprises a mesa structure and an exposed portion of the first conductivity type semiconductor layer adjacent to each other, and a first isolation trench within the mesa structure; interconnection layers connect the LED chips; electrode pads respectively connected to exposed portions of the semiconductor layers; a reflective insulating layer covering the interconnection layers, the mesa structures and the electrode pads, and having penetration holes respectively exposing a portion of the electrode pads; and bonding pads located on a portion of the reflective insulating layer and connected to the electrode pads through the penetrating holes. A method of manufacturing the LED structure.
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Citations
19 Claims
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1. A light-emitting diode (LED) structure, comprising:
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an insulation substrate; a plurality of LED chips, wherein each of the LED chips comprises an epitaxial layer, the epitaxial layer comprises a first conductivity type semiconductor layer, an active layer, and a second conductivity type semiconductor layer sequentially stacked on a surface of the insulation substrate, wherein each of the LED chips comprises a mesa structure and an exposed portion of the first conductivity type semiconductor layer adjacent to each other, wherein a first isolation trench is defined by two adjacent LED chips in a first direction, and wherein the first isolation trench is disposed in the mesa structure; a plurality of interconnection layers, connecting two adjacent LED chips of the LED chips, respectively; a first conductive type electrode pad and a second conductive type electrode pad, disposed on a first LED chip and a second LED chip of the LED chips, respectively, and electrically connected to the exposed portion of the first conductivity type semiconductor layer of the first LED chip and the second conductivity type semiconductor layer of the second LED chip, respectively; a reflective insulating layer, covering the interconnection layers, the mesa structures, the first conductive type electrode pad, and the second conductive type electrode pad, wherein the reflective insulating layer has at least one first penetration hole and at least one second penetration hole exposing a portion of the first conductive type electrode pad and a portion of the second conductive type electrode pad, respectively; a first conductive type bonding pad, located on a portion of the reflective insulating layer, and electrically connected to the first conductive type electrode pad through the at least one first penetration hole; and a second conductive type bonding pad, located on another portion of the reflective insulating layer, separated from the first conductive type bonding pad, and electrically connected to the second conductive type electrode pad through the at least one second penetration hole. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10)
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11. A method for manufacturing a light-emitting diode (LED) structure, comprising:
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providing an insulation substrate; forming an epitaxial structure, wherein the epitaxial structure comprises a first conductivity type semiconductor layer, an active layer, and a second conductivity type semiconductor layer sequentially stacked on a surface of the insulation substrate; forming a plurality of first isolation trenches and a plurality of second isolation trenches in the epitaxial structure, so as to define a plurality of epitaxial layers of a plurality of LED chips, wherein the first isolation trenches abut the second isolation trenches, respectively; removing a portion of the second conductivity type semiconductor layer and a portion of the active layer, so as to define a mesa structure and an exposed portion of the first conductivity type semiconductor layer of each of the LED chips, wherein each of the LED chips comprises one of the first isolation trenches, and the one of the first isolation trenches is disposed in the mesa structure; forming a plurality of interconnection layers, a first conductive type electrode pad, and a second conductive type electrode pad, wherein the interconnection layers connect two adjacent LED chips of the LED chips, respectively, the first conductive type electrode pad and the second conductive type electrode pad are disposed on a first and a second of the LED chips, respectively, and the first conductive type electrode pad and the second conductive type electrode pad are electrically connected to the exposed portion of the first conductivity type semiconductor layer of the first LED chip and the second conductivity type semiconductor layer of the second LED chip, respectively; forming a reflective insulating layer covering the interconnection layers, the mesa structures, the first conductive type electrode pad, and the second conductive type electrode pad, wherein the reflective insulating layer has at least one first penetration hole and at least one second penetration hole exposing a portion of the first conductive type electrode pad and a portion of the second conductive type electrode pad, respectively; forming a first conductive type bonding pad on a portion of the reflective insulating layer, wherein the first conductive type bonding pad is electrically connected to the first conductive type electrode pad through the at least one first penetration hole; and forming a second conductive type bonding pad on another portion of the reflective insulating layer, wherein the second conductive type bonding pad and the first conductive type bonding pad are separated from each other, and the second conductive type bonding pad is electrically connected to the second conductive type electrode pad through the at least one second penetration hole. - View Dependent Claims (12, 13)
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14. A light-emitting diode (LED) structure, comprising:
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an insulation substrate; a plurality of LED chips, wherein each of the LED chips comprises an epitaxial layer, the epitaxial layer comprises a first conductivity type semiconductor layer, an active layer, and a second conductivity type semiconductor layer sequentially stacked on a surface of the insulation substrate, wherein each of the LED chips comprises a mesa structure and an exposed portion of the first conductivity type semiconductor layer adjacent to each other, and a first isolation trench, and wherein the first isolation trench is disposed in the mesa structure; a plurality of interconnection layers, connecting two adjacent LED chips of the LED chips, respectively; a first conductive type electrode pad and a second conductive type electrode pad disposed on a first LED chip and a second LED chip of the LED chips, respectively, and electrically connected to the exposed portion of the first conductivity type semiconductor layer of the first LED chip and the second conductivity type semiconductor layer of the second LED chip, respectively; an insulating layer, covering the interconnection layers, the mesa structures, the first conductive type electrode pad, and the second conductive type electrode pad, wherein the insulating layer has at least one first penetration hole and at least one second penetration hole exposing a portion of the first conductive type electrode pad and the second conductive type electrode pad, respectively; a first conductive type bonding pad, located on a portion of the insulating layer, and electrically connected to the first conductive type electrode pad through the at least one first penetration hole; and a second conductive type bonding pad, located on another portion of the insulating layer, separated from the first conductive type bonding pad, and electrically connected to the second conductive type electrode pad through the at least one second penetration hole. - View Dependent Claims (15, 16, 17, 18, 19)
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Specification