LIGHT-EMITTING DEVICE

• US 20130292731A1
• Filed: 07/05/2013
• Published: 11/07/2013
• Est. Priority Date: 10/17/2006
• Status: Active Grant

• Current Assignee: Epistar Corporation
• Original Assignee: Epistar Corporation
• Inventors: HSIEH, MIN-HSUN, CHEN, WEI YU
• Granted Patent: US 8,941,141 B2
• Time in Patent Office: Days
• US Class Current: 257/98
• CPC Class Codes: H01L 33/10 with a light reflecting structure, e.g. semiconductor Bragg reflector
• CPC Class Codes: H01L 33/22 Roughened surfaces, e.g. at the interface between epitaxial layers
• CPC Class Codes: H01L 33/382 the electrode extending partially in or entirely through the semiconductor body
• CPC Class Codes: H01L 33/405 Reflective materials
• CPC Class Codes: H01L 33/42 Transparent materials

Abstract

A light-emitting device wherein the light-emitting device having a corner, comprising: a light-emitting stacked layer having a first conductivity type semiconductor layer; a light-emitting layer formed on the first conductivity type semiconductor layer; and a second conductivity type semiconductor layer formed on the light-emitting layer; a transparent conductive oxide layer formed on the second conductivity type semiconductor layer wherein the upper surface of the transparent conductive oxide layer is a textured surface; a first electrode formed on the upper surface of the transparent conductive oxide layer; a second electrode formed on the first conductivity type semiconductor layer; a planarization layer formed on partial of the transparent conductive oxide layer and the second electrode; and a reflective layer formed on the upper surface of the planarization layer wherein the projection of the edge of the reflective layer is not overlapped with the edge of the first electrode or the second electrode.

Claims

1. A light-emitting device wherein the light-emitting device having a corner, comprising:

a light-emitting stacked layer having a first conductivity type semiconductor layer;

a light-emitting layer formed on the first conductivity type semiconductor layer; and

a second conductivity type semiconductor layer formed on the light-emitting layer;

a transparent conductive oxide layer formed on the second conductivity type semiconductor layer wherein the upper surface of the transparent conductive oxide layer is a textured surface;

a first electrode formed on the upper surface of the transparent conductive oxide layer;

a second electrode formed on the first conductivity type semiconductor layer;

a planarization layer formed on partial of the transparent conductive oxide layer and the second electrode; and

a reflective layer formed on the upper surface of the planarization layer wherein the projection of the edge of the reflective layer is not overlapped with the edge of the first electrode or the second electrode.

2. The light-emitting device according to claim 1, wherein the first electrode is not electrically connected to the reflective layer.

3. The light-emitting device according to claim 1, further comprising an insulating layer formed on the reflective layer and the planarization layer and/or the material of the planarization layer and the insulating layer is SiO₂ or SiNx.

4. The light-emitting device according to claim 3, further comprising two through holes formed in the insulating layer and the planarization layer and the through holes are aligned with the first electrode and the second electrode.

5. The light-emitting device according to claim 4, further comprising a third electrode and a fourth electrode formed through the through holes and connected to the first electrode and the second electrode respectively.

6. The light-emitting device according to claim 1, wherein the top view shape of the second electrode is in geometric symmetry.

7. The light-emitting device according to claim 1, wherein from the top view, the second electrode is located to the corner of the light-emitting device.

8. The light-emitting device according to claim 1, wherein top view shape of the second electrode can be square, rectangular, triangle, or oval.

9. The light-emitting device according to claim 8, wherein top view shape of the second electrode is rectangular and the first side of the second electrode is not larger than twice the length of the second side.

10. The light-emitting device according to claim 3, wherein the upper surface of the second conductivity type semiconductor layer is a textured surface

11. A method of fabricating a light-emitting device wherein the light-emitting device having a corner, comprising:

providing a light-emitting stacked layer having a first conductivity type semiconductor layer;

a light-emitting layer formed on the first conductivity type semiconductor layer; and

a second conductivity type semiconductor layer formed on the light-emitting layer, wherein the upper surface of the second conductivity type semiconductor layer is a textured surface;

etching a portion of the light-emitting layer and the second conductivity type semiconductor layer;

forming a transparent conductive oxide layer on the second conductivity type semiconductor layer wherein the upper surface of the transparent conductive oxide layer is a textured surface;

forming a first electrode on the upper surface of the transparent conductive oxide layer, and forming a second electrode on the first conductivity type semiconductor layer;

forming a planarization layer on partial of the transparent conductive oxide layer and the second electrode; and

forming a reflective layer on the upper surface of the planarization layer wherein the projection of the edge of the reflective layer is not overlapped with the edge of the first electrode or the second electrode.

12. The method of fabricating the light-emitting device of claim 11, wherein the first electrode is not electrically connected to the reflective layer.

13. The method of fabricating the light-emitting device of claim 11, further comprising forming an insulating layer on the reflective layer and the planarization layer.

14. The method of fabricating the light-emitting device of claim 13, further comprising forming at least two through holes in the insulating layer and the planarization layer and the through holes are align with the first electrode and the second electrode.

15. The method of fabricating the light-emitting device of claim 11, wherein the planarization layer is formed by the chemical mechanical polishing process.

16. The method of fabricating the light-emitting device of claim 11, wherein the top view shape of the second electrode is in geometric symmetry.

17. The method of fabricating the light-emitting device of claim 11, wherein from the top view, the second electrode is located to the corner of the light-emitting device.

18. The method of fabricating the light-emitting device of claim 11, wherein top view shape of the second electrode can be square, rectangular, triangle, or oval.

19. The method of fabricating the light-emitting device of claim 18, wherein top view shape of the second electrode is rectangular and the first side of the second electrode is not larger than twice the length of the second side.

20. The method of fabricating the light-emitting device of claim 14, further comprising forming a third electrode and a fourth electrode formed through the through holes and connected to the first electrode and the second electrode respectively.