LEVEL SHIFT CIRCUIT USING PARASITIC RESISTOR IN SEMICONDUCTOR SUBSTRATE

• US 20130293247A1
• Filed: 04/12/2013
• Published: 11/07/2013
• Est. Priority Date: 04/12/2012
• Status: Active Grant

• Current Assignee: Fuji Electric Company Limited (Fuji Electric Systems Company Limited)
• Original Assignee: Fuji Electric Company Limited (Fuji Electric Systems Company Limited)
• Inventors: AKAHANE, Masashi
• Granted Patent: US 8,933,714 B2
• Time in Patent Office: Days
• US Class Current: 324/705
• CPC Class Codes: G01R 27/02 Measuring real or complex resistance, reactance, impedance, or other two-pole characteristics derived therefrom, e.g. time constant by measuring phase angle only G01R25/00
• CPC Class Codes: H03K 17/04123 in field-effect transistor switches
• CPC Class Codes: H03K 17/145 in field-effect transistor switches
• CPC Class Codes: H03K 17/162 without feedback from the output circuit to the control circuit
• CPC Class Codes: H03K 17/56 by the use, as active elements, of semiconductor devices using diodes H03K17/74
• CPC Class Codes: H03K 2217/0063 High side switches, i.e. the higher potential [DC] or life wire [AC] being directly connected to the switch and not via the load
• CPC Class Codes: H03K 2217/0072 Low side switches, i.e. the lower potential [DC] or neutral wire [AC] being directly connected to the switch and not via the load
• CPC Class Codes: H03K 2217/0081 Power supply means, e.g. to the switch driver

Abstract

A level shift circuit in which no adverse effect is produced on a delay time, regardless of the resistance values of resistors. The level shift circuit includes an operation detection circuit that outputs a nseten signal and a nresen signal in response to a state of output from first and second series circuits, a latch malfunction protection circuit connected to the operation detection circuit, a latch circuit connected through first to sixth resistors to first and second level shift output terminals of the first and second series circuits, first and second parasitic resistors, and third and fourth switching elements connected in parallel therewith, and fifth and sixth switching elements connected to a power source potential, a connection point of the first and second resistors or a connection point of the third and fourth resistors, and the operation detection circuit.

Claims

1. A level shift circuit comprising:

a first series circuit in which a first parasitic resistor in a semiconductor substrate, a first switching element connected to an input terminal for receiving input of a first level shift input signal, and a first level shift output terminal for outputting a first level shift output signal are connected in series;

a second series circuit in which a second parasitic resistor in a semiconductor substrate, a second switching element connected to an input terminal for receiving input of a second level shift input signal, and a second level shift output terminal for outputting a second level shift output signal are connected in series;

an operation detection circuit that is connected to the first series circuit and the second series circuit, receives input of the first level shift output signal and the second level shift output signal outputted from the first series circuit and the second series circuit, respectively, and outputs the first level shift output signal, the second level shift output signal, a first detection signal, and a second detection signal, wherein the first detection signal is outputted from a first terminal of the operation detection circuit and is at a low level in response to a first state in which the first level shift output signal is at a low level and the second level shift output signal is at a high level, and the second detection signal is outputted from a second terminal of the operation detection circuit and is at a low level in response to a second state in which the first level shift output signal is at a high level and the second level shift output signal is at a low level;

a latch malfunction protection circuit that inputs the first level shift output signal and the second level shift output signal from the operation detection circuit, outputs a high-impedance signal when both the first level shift output signal and the second level shift output signal are at a low level, and passes and outputs the first level shift output signal and the second level shift output signal without any modification, or outputs a signal obtained by processing on the basis of the first level shift output signal and the second level shift output signal when both the first level shift output signal and the second level shift output signal are not at a low level;

a latch circuit that receives output from the latch malfunction protection circuit, and when the output from the latch malfunction protection circuit is at a low level or a high level, stores a value thereof and outputs the stored value together with an inverted value thereof, and when the output from the latch malfunction protection circuit is at a high impedance, holds a value that has been stored immediately before the input assumes a high impedance and outputs the stored value together with the inverted value of the stored value, wherein one of output terminals of the latch circuit is connected through a first resistor, a second resistor, and a third resistor to the first level shift output terminal, and the other one of output terminals of the latch circuit is connected through a fourth resistor, a fifth resistor, and a sixth resistor to the second level shift output terminal;

a third switching element connected in parallel to the first parasitic resistor, wherein a source terminal of the third switching element is connected to a power source potential, a drain terminal of the third switching element is connected to the first level shift output terminal, and a gate terminal of the third switching element is connected to the second level shift output terminal;

a fourth switching element connected in parallel to the second parasitic resistor, wherein a source terminal of the fourth switching element is connected to a power source potential, a drain terminal of the fourth switching element is connected to the second level shift output terminal, and a gate terminal of the fourth switching element is connected to the first level shift output terminal;

a fifth switching element in which a source terminal is connected to the power source potential, a drain terminal is connected between the first resistor and the second resistor, and a gate terminal is connected to the first terminal of the operation detection circuit; and

a sixth switching element in which a source terminal is connected to the power source potential, a drain terminal is connected between the fourth resistor and the fifth resistor, and a gate terminal is connected to the second terminal of the operation detection circuit.

2. The level shift circuit according to claim 1, further comprising:

a seventh switching element in which a source terminal is connected to the power source potential, a drain terminal is connected between the second resistor and the third resistor, and a gate terminal is connected to the second terminal of the operation detection circuit; and

an eighth switching element in which a source terminal is connected to the power source potential, a drain terminal is connected between the fifth resistor and the sixth resistor, and a gate terminal is connected to the first terminal of the operation detection circuit.

3. The level shift circuit according to claim 1, wherein

the operation detection circuit comprises a logical circuit group constituted by a first inverter, a second inverter, a third inverter, a fourth inverter, a first NAND element, and a second NAND element;

an input terminal of the first inverter and one input terminal of the first NAND element are connected to the first level shift output terminal;

an input terminal of the second inverter and one input terminal of the second NAND element are connected to the second level shift output terminal;

an input terminal of the third inverter and another input terminals of the second NAND element are connected to an output terminal of the first inverter;

an input terminal of the fourth inverter and another input terminals of the first NAND element are connected to an output terminal of the second inverter; and

the first terminal of the operation detection circuit is an output terminal of the second NAND element, and the second terminal of the operation detection circuit is an output terminal of the first NAND element.

4. The level shift circuit according to claim 1, wherein

a resistance ratio of a combined resistance value of the first parasitic resistor and the first to third resistors is adjusted such that a potential level of a signal inputted to each of the logical circuit groups in the operation detection circuit is at a high level with respect to the logical circuit groups when an output of the one output terminal of the latch circuit is at a low level and the first parasitic resistor and the first to third resistors are in a series connection state;

and

a resistance ratio of a combined resistance value of the second parasitic resistor and the fourth to sixth resistors is adjusted such that a potential level of a signal inputted to each of the logical circuit groups in the operation detection circuit is at a high level with respect to the logical circuit groups when an output of the other output terminal of the latch circuit is at a low level and the second parasitic resistor and the fourth to sixth resistors are in a series connection state.

5. The level shift circuit according to claim 1, wherein

a series combined resistance value of the second resistor and the third resistor is equal to or less than a resistance value of the first parasitic resistor;

and

a series combined resistance value of the fifth resistor and the sixth resistor is equal to or less than a resistance value of the second parasitic resistor.

6. The level shift circuit according to claim 1, wherein

an inverter is connected between the latch circuit and the first resistor.

7. A method for determining a resistance value in a level shift circuit that includes a first series circuit in which a first parasitic resistor in a semiconductor substrate, a first switching element connected to an input terminal for receiving input of a first level shift input signal, and a first level shift output terminal for outputting a first level shift output signal are connected in series;

a second series circuit in which a second parasitic resistor in a semiconductor substrate, a second switching element connected to an input terminal for receiving input of a second level shift input signal, and a second level shift output terminal for outputting a second level shift output signal are connected in series;

an operation detection circuit that is connected to the first series circuit and the second series circuit, receives input of the first level shift output signal and the second level shift output signal outputted from the first series circuit and the second series circuit, respectively, and outputs the first level shift output signal, the second level shift output signal, a first detection signal, and a second detection signal, wherein the first detection signal is outputted from a first terminal of the operation detection circuit and is at a low level in response to a first state in which the first level shift output signal is at a low level and the second level shift output signal is at a high level, and the second detection signal is outputted from a second terminal of the operation detection circuit and is at a low level in response to a second state in which the first level shift output signal is at a high level and the second level shift output signal is at a low level;

a latch malfunction protection circuit that inputs the first level shift output signal and the second level shift output signal from the operation detection circuit, outputs a high-impedance signal when both the first level shift output signal and the second level shift output signal are at a low level, and passes and outputs the first level shift output signal and the second level shift output signal without any modification, or outputs a signal obtained by processing on the basis of the first level shift output signal and the second level shift output signal when both the first level shift output signal and the second level shift output signal are not at a low level;

a latch circuit that receives output from the latch malfunction protection circuit, and when the output from the latch malfunction protection circuit is at a low level or a high level, stores a value thereof and outputs the stored value together with an inverted value thereof, and when the output from the latch malfunction protection circuit is at a high impedance, holds a value that has been stored immediately before the input assumes a high impedance and outputs the stored value together with the inverted value of the stored value, wherein one of output terminals of the latch circuit is connected through a first resistor, a second resistor, and a third resistor to the first level shift output terminal, and the other one of output terminals of the latch circuit is connected through a fourth resistor, a fifth resistor, and a sixth resistor to the second level shift output terminal;

a third switching element connected in parallel to the first parasitic resistor, wherein a source terminal of the third switching element is connected to a power source potential, a drain terminal of the third switching element is connected to the first level shift output terminal, and a gate terminal of the third switching element is connected to the second level shift output terminal;

a fourth switching element connected in parallel to the second parasitic resistor, wherein a source terminal of the fourth switching element is connected to a power source potential, a drain terminal of the fourth switching element is connected to the second level shift output terminal, and a gate terminal of the fourth switching element is connected to the first level shift output terminal;

a fifth switching element in which a source terminal is connected to the power source potential, a drain terminal is connected between the first resistor and the second resistor, and a gate terminal is connected to the first terminal of the operation detection circuit; and

a sixth switching element in which a source terminal is connected to the power source potential, a drain terminal is connected between the fourth resistor and the fifth resistor, and a gate terminal is connected to the second terminal of the operation detection circuit, the method comprising;

determining, in the first state, a resistance value of the first resistor by a current consumption tolerance value in the first resistor and a maximum value of the power source potential, and determining resistance values of the first parasitic resistor, the second resistor, and the third resistor on the basis of the determined resistance value of the first resistor; and

determining, in the second state, a resistance value of the second resistor by a current consumption tolerance value in the second resistor and a maximum value of the power source potential, and determining resistance values of the second parasitic resistor, the fifth resistor, and the sixth resistor on the basis of the determined resistance value of the second resistor.