GAS-BARRIER LAMINATE FILM
First Claim
1. A gas-barrier laminate film, comprising:
- on at least one surface of a substrate film thereof,a first inorganic thin layer prepared by a vacuum vapor deposition,a second inorganic thin layer prepared by a chemical vapor deposition, anda third inorganic thin layer prepared by a vacuum vapor deposition in that order thereon,whereina thickness of the first and third inorganic thin layers is of from 0.1 nm to 500 nm,a carbon content in the second inorganic thin layer is of from 0.5 at % to less than 20 at %, anda thickness of the second inorganic thin layer is less than 20 nm.
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Accused Products
Abstract
Provided are a gas-barrier laminate film which shows good productivity, has high transparency, exhibits high-level gas-barrier properties and has excellent adhesion strength between the constituent layers therein, and which curls little; and a method for producing the film. The gas-barrier laminate film has, on at least one surface of a substrate film thereof, an inorganic thin layer formed by a vacuum vapor deposition, an inorganic thin layer formed by a chemical vapor deposition, and an inorganic thin layer formed by a vacuum vapor deposition in that order thereon, wherein the thickness of the inorganic thin layer formed by vacuum vapor deposition is from 0.1 nm to 500 nm, and the carbon content in the inorganic thin layer formed by chemical vapor deposition is from 0.5 at % to less than 20 at %, and the thickness of the layer is less than 20 nm.
2 Citations
22 Claims
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1. A gas-barrier laminate film, comprising:
- on at least one surface of a substrate film thereof,
a first inorganic thin layer prepared by a vacuum vapor deposition, a second inorganic thin layer prepared by a chemical vapor deposition, and a third inorganic thin layer prepared by a vacuum vapor deposition in that order thereon, wherein a thickness of the first and third inorganic thin layers is of from 0.1 nm to 500 nm, a carbon content in the second inorganic thin layer is of from 0.5 at % to less than 20 at %, and a thickness of the second inorganic thin layer is less than 20 nm. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17, 18, 19)
- on at least one surface of a substrate film thereof,
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20. A method for producing a gas-barrier laminate film, the method comprising:
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on at least one surface of a substrate film thereof, preparing a first inorganic thin layer by a vacuum vapor deposition, subsequently preparing a second inorganic thin layer by a chemical vapor deposition, and subsequently preparing a third inorganic thin layer by a vacuum vapor deposition, thereby obtaining the gas-barrier laminate film, wherein a thickness of the first and third inorganic thin layers is of from 10 nm to 500 nm, a carbon content in the second inorganic thin layer is of from 0.5 at % to less than 20 at %, a thickness of the second inorganic thin layer is less than 20 nm, the first and third inorganic thin layers are prepared under a reduced pressure of from 10−
4 Pa to 10−
2 Pa,the second inorganic thin layer is prepared under a reduced pressure of from 10−
2 Pa to 10 Pa, anda substrate film transportation velocity is 100 m/min or more. - View Dependent Claims (21)
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22. (canceled)
Specification
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- Resources
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Current AssigneeMitsubishi Plastics Incorporated (Mitsubishi Chemical Holdings Corporation)
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Original AssigneeMitsubishi Plastics Incorporated (Mitsubishi Chemical Holdings Corporation)
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InventorsYamauchi, Koji, Hachisuka, Tooru, Yoshida, Shigenobu, Kimura, Shigeto
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Application NumberUS13/883,247Publication NumberTime in Patent OfficeDaysField of SearchUS Class Current428/216CPC Class CodesC23C 14/10 Glass or silicaC23C 16/30 Deposition of compounds, mi...H05K 5/0213 Venting apertures; Construc...Y10T 428/24975 No layer or component great...
