Silicon Carbide Asscher Cut Gemstone

• US 20130298605A1
• Filed: 05/08/2012
• Published: 11/14/2013
• Est. Priority Date: 05/08/2012
• Status: Abandoned Application

• Current Assignee: Better Than Diamond, Inc.
• Original Assignee: Better Than Diamond, Inc.
• Inventors: Ritchie, Anthony
• Application Number:
  US13/467,037
• Publication Number:
  US 20130298605A1
• Time in Patent Office: Days
• US Class Current: 63/32
• CPC Class Codes: A44C 17/001 Faceting gems
• CPC Class Codes: A44C 27/001 Materials for manufacturing jewellery
• CPC Class Codes: B28D 5/00 Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor working by grinding or polishing B24; for artistic purposes B44B

Abstract

The instant application discloses, among other things, a specific set of cutting proportions tailored for the optical characteristics of Silicon Carbide (“SiC”) Asscher cut gemstone.

Claims

1. An SiC gemstone, comprising:

a crown portion comprising;

a plurality of crown main tier one facets cut at an angle of approximately 45.4 degrees;

a plurality of crown main tier two facets cut at an angle of approximately 34.3 degrees;

a plurality of crown main facets tier three cut at an angle of approximately 22.6 degrees;

a plurality of crown main tier four facets cut at an angle of approximately 18.5 degrees;

a plurality of crown corner tier one facets cut at an angle of approximately 41.8 degrees;

a plurality of crown corner tier two facets cut at an angle of approximately 31.1 degrees;

a plurality of crown corner tier three facets cut at an angle of approximately 20.2 degrees;

a plurality of crown corner tier four facets cut at an angle of approximately 16.5 degrees;

a pavilion portion comprising;

a plurality of pavilion tier one facets cut at an angle of approximately 45.1 degrees;

a plurality of pavilion tier two facets cut at an angle of approximately 43.1 degrees;

a plurality of pavilion tier three facets cut at an angle of approximately 37.6 degrees;

a plurality of pavilion tier four facets cut at an angle of approximately 46.3 degrees;

a plurality of pavilion corner tier one facets cut at an angle of approximately 46.3 degrees;

a plurality of pavilion corner tier two facets cut at an angle of approximately 41.6 degrees;

a plurality of pavilion corner tier three facets cut at an angle of approximately 39.6 degrees;

a plurality of pavilion corner tier four facets cut at an angle of approximately 34.3 degrees;

a girdle portion abutting the crown portion and extending along a predetermined plane.

2. The SiC gemstone of claim 1 wherein there are four crown main tier one facets.

3. The SiC gemstone of claim 1 wherein there are four crown corner tier one facets.

4. The SiC gemstone of claim 1 wherein there are four crown main tier two facets.

5. The SiC gemstone of claim 1 wherein there are four crown corner tier two facets.

6. The SiC gemstone of claim 1 wherein there are four pavilion tier one facets.

7. The SiC gemstone of claim 1 wherein there are four pavilion tier two facets.

8. The SiC gemstone of claim 1 wherein there are four pavilion corner tier one facets.

9. The SiC gemstone of claim 1 wherein there are four pavilion corner tier two facets.

10. The SiC gemstone of claim 1 wherein there are four pavilion tier three facets.

11. The SiC gemstone of claim 1 wherein the SiC is selected from a group comprising 6H, 4H, and 3C SiC.

12. A method of cutting an SiC gemstone, comprising:

cutting a girdle outline of the SiC gemstone;

cutting a main tier one facet on a pavilion side of the SiC gemstone at an angle of approximately 49.8 degrees;

cutting a main tier two facet on the pavilion side of the SiC gemstone at an angle of approximately 45.1 degrees;

cutting a main tier three facet on the pavilion side of the SiC gemstone at an angle of approximately 43.1 degrees;

cutting a main tier four facet on the pavilion side of the SiC gemstone at an angle of approximately 37.6 degrees;

cutting a corner tier one facet on the pavilion side of the SiC gemstone at an angle of approximately 46.3 degrees;

cutting a corner tier two facet on the pavilion side of the SiC gemstone at an angle of approximately 41.6 degrees;

cutting a corner tier three facet on the pavilion side of the SiC gemstone at an angle of approximately 39.6 degrees;

cutting a corner tier four facet on the pavilion side of the SiC gemstone at an angle of approximately 34.3 degrees;

cutting a main tier one facet on the crown side of the SiC gemstone at an angle of approximately 45.4 degrees;

cutting a main tier two facet on the crown side of the SiC gemstone at an angle of approximately 34.3 degrees;

cutting a main tier three facet on the crown side of the SiC gemstone at an angle of approximately 22.6 degrees;

cutting a main tier four facet on the crown side of the SiC gemstone at an angle of approximately 18.5 degrees;

cutting a corner tier one facet on the crown side of the SiC gemstone at an angle of approximately 41.8 degrees;

cutting a corner tier two facet on the crown side of the SiC gemstone at an angle of approximately 31.1 degrees;

cutting a corner tier three facet on the crown side of the SiC gemstone at an angle of approximately 20.2 degrees; and

cutting a corner tier four facet on the crown side of the SiC gemstone at an angle of approximately 16.5 degrees;

13. The method of claim 12 wherein the cutting is performed by a robotic cutting machine.

14. The method of claim 12 further comprising polishing the facets on the crown side of the SiC gemstone.

15. The method of claim 12 further comprising polishing the facets on the pavilion side of the SiC gemstone.