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GROUP 13 NITRIDE SEMICONDUCTOR DEVICE AND METHOD OF ITS MANUFACTURE

  • US 20130299846A1
  • Filed: 05/03/2013
  • Published: 11/14/2013
  • Est. Priority Date: 05/09/2012
  • Status: Active Grant
First Claim
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1. A semiconductor device comprising:

  • a substrate;

    at least one semiconducting layer comprising a nitride of a group 13 element on said substrate; and

    an ohmic contact on the at least one semiconducting layer, said ohmic contact comprising a silicon-comprising portion on the at least one semiconducting layer and a metal portion adjacent to and extending over said silicon-comprising portion, the metal portion comprising titanium and a further metal, wherein the ohmic contact does not contain gold.

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