HYBRIDLY INTEGRATED COMPONENT AND METHOD FOR THE PRODUCTION THEREOF

• US 20130299928A1
• Filed: 05/09/2013
• Published: 11/14/2013
• Est. Priority Date: 05/14/2012
• Status: Active Grant

• Current Assignee: Robert Bosch GmbH
• Original Assignee: Robert Bosch GmbH
• Inventors: CLASSEN, Johannes, WEBER, Heribert, MEISEL, Daniel Christoph, HATTASS, Mirko
• Granted Patent: US 9,212,048 B2
• Time in Patent Office: Days
• US Class Current: 257/417
• CPC Class Codes: B81B 2207/07 Interconnects
• CPC Class Codes: B81B 2207/096 through the substrate
• CPC Class Codes: B81B 3/0075 For improving wear resistance
• CPC Class Codes: B81C 1/00238 Joining a substrate with an electronic processing unit and a substrate with a micromechanical structure
• CPC Class Codes: B81C 1/00674 Treatments for improving wear resistance
• CPC Class Codes: B81C 2203/0109 Bonding an individual cap on the substrate
• CPC Class Codes: H01L 2224/16225 the item being non-metallic, e.g. insulating substrate with or without metallisation
• CPC Class Codes: H01L 2924/19105 in a side-by-side arrangement on a common die mounting substrate

Abstract

A hybridly integrated component includes an ASIC element having a processed front side, a first MEMS element having a micromechanical structure extending over the entire thickness of the first MEMS substrate, and a first cap wafer mounted over the micromechanical structure of the first MEMS element. At least one structural element of the micromechanical structure of the first MEMS element is deflectable, and the first MEMS element is mounted on the processed front side of the ASIC element such that a gap exists between the micromechanical structure and the ASIC element. A second MEMS element is mounted on the rear side of the ASIC element. The micromechanical structure of the second MEMS element extends over the entire thickness of the second MEMS substrate and includes at least one deflectable structural element.

Claims

1. A hybridly integrated component, comprising:

an ASIC element having a processed front side;

a first MEMS element having a first substrate and a first micromechanical structure extending over the entire thickness of the first substrate, wherein at least one structural element of the first micromechanical structure is deflectable, and wherein the first MEMS element is mounted on the processed front side of the ASIC element such that a gap exists between the first micromechanical structure and the ASIC element;

a first cap wafer mounted over the first micromechanical structure of the first MEMS element;

a second MEMS element mounted on a rear side of the ASIC element, the second MEMS element having a second substrate and a second micromechanical structure extending over the entire thickness of the second substrate, wherein the second MEMS element includes at least one deflectable structural element, and wherein a gap exists between the second micromechanical structure and the ASIC element; and

a second cap wafer mounted over the second micromechanical structure of the second MEMS element.

2. The component as recited in claim 1, wherein in the ASIC element contains at least one ASIC through-contact which produces an electrical connection between the processed front side of the ASIC element and the second MEMS element on the rear side of the ASIC element.

3. The component as recited in claim 1, wherein the processed front side of the ASIC element has at least one exposed connecting pad for external contacting of the component.

4. The component as recited in claim 1, wherein at least one of the first and second cap wafers contains at least one cap through-contact for external contacting of the component.

5. The component as recited in claim 1, wherein:

at least one of the first and second MEMS elements includes a micromechanical sensor structure having at least one seismic mass extending over the entire thickness of the at least one of the first and second MEMS elements; and

at least a portion of a signal processing and evaluation circuit for sensor signals are integrated on the ASIC element.

6. A method for producing hybridly integrated components, comprising:

processing an ASIC substrate to provide a processed front side of the ASIC substrate;

mounting a first MEMS substrate on the processed front side of the ASIC substrate;

producing a first micromechanical structure in the mounted first MEMS substrate, the first micromechanical structure extending over the entire thickness of the first MEMS substrate;

mounting a first cap wafer over the first micromechanical structure of the first MEMS substrate;

mounting a second MEMS substrate on a rear side of the ASIC substrate;

producing a second micromechanical structure in the mounted second MEMS substrate, the second micromechanical structure extending over the entire thickness of the second MEMS substrate;

mounting a second cap wafer over the second micromechanical structure of the second MEMS substrate; and

subsequently separating individual hybridly integrated components.

7. The method as recited in claim 6, wherein in the processing of the ASIC substrate, at least one ASIC through-contact is created in the ASIC substrate, and a layer construction having at least one circuit level is produced on the front side of the ASIC substrate.

8. The method as recited in claim 6, wherein the processed ASIC substrate is thinned on the rear side before the mounting of the second MEMS substrate.

9. The method as recited in claim 6, wherein at least one of:

(i) a first standoff structure is produced on the front side of the processed ASIC substrate, and the first MEMS substrate is mounted on the first standoff structure; and

(ii) a second standoff structure is produced on the rear side of the processed ASIC substrate, and the second MEMS substrate is mounted on the second standoff structure.

10. The method as recited in claim 6, wherein at least one of (i) the connection between the first MEMS substrate and the processed ASIC substrate is produced in a bonding method, and (ii) the connection between the second MEMS substrate and the processed ASIC substrate is produced in a bonding method.

11. The method as recited in claim 6, wherein after mounting on the processed ASIC substrate, at least one of the first MEMS substrate and the second MEMS substrate is thinned down to a specified structural height of corresponding at least one of the first micromechanical structure and the second micromechanical structure to be produced.

12. The method as recited in claim 6, wherein the structuring of at least one of the first and second MEMS substrates takes place in a trench process.

13. The method as recited in claim 6, wherein at least one of (i) in the first MEMS substrate at least one first MEMS through-contact is produced as an electrical connection between the first MEMS substrate and the ASIC substrate, and (ii) in the second MEMS substrate at least one second MEMS through-contact is produced as an electrical connection between the second MEMS substrate and the ASIC substrate.

14. The method as recited in claim 6, wherein at least one of the first cap wafer and the second cap wafer is preprocessed, prior to the mounting, to produce at least one cap through-contact for external electrical contacting.