REPLACEMENT GATE ELECTRODE FILL AT REDUCED TEMPERATURES
First Claim
1. A method, comprising:
- forming a sacrificial gate structure above a semiconductor layer, said sacrificial gate structure comprising a dummy gate electrode;
forming a gate cavity by removing at least said dummy gate electrode from above said semiconductor layer;
forming a work-function material of a replacement metal gate electrode in said gate cavity; and
forming a conductive metal fill material in said gate cavity and above said work-function material, wherein forming said conductive metal fill material comprises performing a physical vapor deposition process at a temperature below approximately 450°
C.
2 Assignments
0 Petitions
Accused Products
Abstract
Generally, the present disclosure is directed to forming conductive metal fill materials in replacement gate electrodes using reduced deposition temperatures. One illustrative method disclosed herein includes, among other things, forming a sacrificial gate structure above a semiconductor layer, the sacrificial gate structure including a dummy gate electrode, and forming a gate cavity by removing at least the dummy gate electrode from above the semiconductor layer. The disclosed method further includes forming a work-function material of a replacement metal gate electrode in the gate cavity, and forming a conductive metal fill material in the gate cavity and above the work-function material, wherein forming the conductive metal fill material includes performing a material deposition process at a temperature below approximately 450° C.
25 Citations
25 Claims
-
1. A method, comprising:
-
forming a sacrificial gate structure above a semiconductor layer, said sacrificial gate structure comprising a dummy gate electrode; forming a gate cavity by removing at least said dummy gate electrode from above said semiconductor layer; forming a work-function material of a replacement metal gate electrode in said gate cavity; and forming a conductive metal fill material in said gate cavity and above said work-function material, wherein forming said conductive metal fill material comprises performing a physical vapor deposition process at a temperature below approximately 450°
C. - View Dependent Claims (2, 3, 5, 6, 13, 14)
-
-
4. (canceled)
-
7-12. -12. (canceled)
-
15. A method for forming a replacement gate structure of a semiconductor device, the method comprising:
-
forming a sacrificial gate structure above a semiconductor layer of said semiconductor device; forming a gate cavity by selectively removing said sacrificial gate structure from above said semiconductor layer; partially filling said gate cavity by forming at least one layer of a metal gate electrode work-function material in said gate cavity; and filling a remaining portion of said gate cavity with a conductive metal fill material by performing a physical vapor deposition process at a temperature below approximately 450°
C. - View Dependent Claims (16, 17, 18, 19, 24, 25)
-
-
20-22. -22. (canceled)
-
23. A method for forming a replacement gate structure of a semiconductor device, the method comprising:
-
forming a sacrificial gate structure above a semiconductor layer of said semiconductor device; forming a gate cavity by selectively removing said sacrificial gate structure from above said semiconductor layer; partially filling said gate cavity by forming at least one layer of a metal gate electrode work-function material having an intrinsic internal stress level in said gate cavity; and performing a physical vapor deposition process at a temperature below approximately 450°
C. to fill a remaining portion of said gate cavity with a conductive metal fill material by depositing an aluminum-germanium material alloy having a germanium content of less than approximately 5% atomic weight above said at least one layer of metal gate electrode work-function material.
-
Specification