MANUFACTURING APPARATUS OF SiC SINGLE CRYSTAL, JIG FOR USE IN THE MANUFACTURING APPARATUS, AND METHOD FOR MANUFACTURING SiC SINGLE CRYSTAL

• US 20130305981A1
• Filed: 12/26/2011
• Published: 11/21/2013
• Est. Priority Date: 12/27/2010
• Status: Active Grant

• Current Assignee: Toyota Jidosha Kabushiki Kaisha (Toyota Motor Corporation)
• Original Assignee: Nippon Steel & Sumitomo Metal Corporation (Nippon Steel Corporation), Toyota Jidosha Kabushiki Kaisha (Toyota Motor Corporation)
• Inventors: Kamei, Kazuhito, Kusunoki, Kazuhiko, Yashiro, Nobuyoshi, Okada, Nobuhiro, Kado, Motohisa, Sakamoto, Hidemitsu, Daikoku, Hironori
• Granted Patent: US 9,388,508 B2
• Time in Patent Office: Days
• US Class Current: 117/13
• CPC Class Codes: C30B 15/32 Seed holders, e.g. chucks
• CPC Class Codes: C30B 19/06 Reaction chambers; Boats for supporting the melt; Substrate holders
• CPC Class Codes: C30B 29/36 Carbides
• CPC Class Codes: Y10T 117/1032 Seed pulling
• CPC Class Codes: Y10T 117/1072 including details of means providing product movement [e.g., shaft guides, servo means]

Abstract

A manufacturing apparatus of a SiC single crystal which can suppress the generation of a polycrystal is provided. A jig (41) and a crucible (6) are accommodated in a chamber (1). A SiC solution (8) is housed in the crucible (6). The jig (41) includes a seed shaft (411) and a cover member (412). The seed shaft (411) can move up and down, and a SiC seed crystal (9) is attached to the lower surface thereof. The cover member (412) is attached to the lower end portion of the seed shaft (411). The cover member (412) is a housing which has an opening at its lower end, wherein the lower end portion of the seed shaft (411) is disposed in the cover member (412).

Claims

1. A manufacturing apparatus of a SiC single crystal, comprising:

a chamber capable of accommodating a crucible for housing a SiC solution;

a vertical seed shaft which has a lower end surface to which a SiC seed crystal can be attached; and

a cover member which is a housing having an open lower end and can be housed in the crucible, wherein a lower end portion of the seed shaft is disposed inside the cover member.

2. The manufacturing apparatus according to claim 1, wherein

the cover member comprises:

a skirt portion which surrounds the lower end portion of the seed shaft leaving a gap therebetween; and

an upper cover portion through which the seed shaft penetrates and which is connected to an upper end of the skirt portion.

3. The manufacturing apparatus according to claim 1, wherein

the cover member has a vent hole.

4. The manufacturing apparatus according to claim 1, wherein

the cover member is fixed to the seed shaft.

5. The manufacturing apparatus according to claim 1, further comprising:

a fixing member fixing the cover member at a predetermined position in the chamber;

wherein

the seed shaft is rotatable around an axis of the seed shaft with respect to the cover member.

6. The manufacturing apparatus according to claim 5, wherein

the fixing member can move up and down in the up-and-down direction of the manufacturing apparatus.

7. The manufacturing apparatus according to claim 1, wherein

the lower end of the cover member is to be brought into contact with the SiC solution in the crucible.

8. A jig for use in a manufacturing apparatus of a SiC single crystal by a solution growth method, the jig comprising:

a bar-shaped seed shaft having a lower end surface to which a SiC seed crystal is to be attached; and

a cover member which is a housing having an open lower end, wherein the lower end portion of the seed shaft is disposed inside the cover member.

9. The jig according to claim 8, wherein

the cover member comprises:

a skirt portion which surrounds the lower end portion of the seed shaft leaving a gap therebetween; and

an upper cover portion through which the seed shaft penetrates and which is connected to an upper end of the skirt portion.

10. The jig according to claim 8, wherein

the cover member has a vent hole.

11. The jig according to claim 8, wherein

the cover member is fixed to the seed shaft.

12. The jig according to claim 8, wherein

the seed shaft is rotatable around an axis of the seed shaft with respect to the cover member.

13. A method for manufacturing a SiC single crystal by a solution growth method, comprising the steps of:

providing a jig including a vertical seed shaft which has a lower end surface, and a cover member which is a housing having an open lower end and inside which a lower end portion of the seed shaft is disposed;

attaching a SiC seed crystal to the lower end surface of the seed shaft;

heating a crucible which houses a starting material containing Si to produce a SiC solution;

bringing the SiC seed crystal attached to the jig into contact with the SiC solution in the crucible; and

growing the SiC single crystal on the SiC seed crystal.

14. The method for manufacturing the SiC single crystal according to claim 13, wherein

the step of growing the SiC single crystal further includes immersing a lower end of the cover member in the SiC solution in the crucible.