LIGHT-EMITTING DEVICE AND METHOD FOR MANUFACTURING THE SAME

• US 20130306947A1
• Filed: 07/25/2013
• Published: 11/21/2013
• Est. Priority Date: 09/04/2009
• Status: Active Grant

• Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Original Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Inventors: YAMAZAKI, Shunpei, SAKATA, Junichiro, SAKAKURA, Masayuki, OIKAWA, Yoshiaki, OKAZAKI, Kenichi, MARUYAMA, Hotaka
• Granted Patent: US 8,957,411 B2
• Time in Patent Office: Days
• US Class Current: 257/40
• CPC Class Codes: H01L 27/1225 with semiconductor materials not belonging to the group IV of the periodic table, e.g. InGaZnO
• CPC Class Codes: H01L 27/124 with a particular composition, shape or layout of the wiring layers specially adapted to the circuit arrangement, e.g. scanning lines in LCD pixel circuits wiring structures per se H01L23/52
• CPC Class Codes: H01L 27/127 with a particular formation, treatment or patterning of the active layer specially adapted to the circuit arrangement
• CPC Class Codes: H01L 29/247 Amorphous materials
• CPC Class Codes: H01L 29/78618 characterised by the drain or the source properties, e.g. the doping structure, the composition, the sectional shape or the contact structure silicide contacts, electrodes in general H01L29/458
• CPC Class Codes: H01L 29/78648 arranged on opposing sides of the channel
• CPC Class Codes: H01L 29/7869 having a semiconductor body comprising an oxide semiconductor material, e.g. zinc oxide, copper aluminium oxide, cadmium stannate
• CPC Class Codes: H01L 29/78693 the semiconducting oxide being amorphous
• CPC Class Codes: H01L 29/78696 characterised by the structure of the channel, e.g. multichannel, transverse or longitudinal shape, length or width, doping structure, or the overlap or alignment between the channel and the gate, the source or the drain, or the contacting structure of the channel H01L29/78612 takes precedence; transistors having a drain offset region or a lightly doped drain [LDD] H01L29/78621
• CPC Class Codes: H10K 50/80 Constructional details
• CPC Class Codes: H10K 59/12 Active-matrix OLED [AMOLED] displays
• CPC Class Codes: H10K 59/1201 Manufacture or treatment
• CPC Class Codes: H10K 59/1213 the pixel elements being TFTs
• CPC Class Codes: H10K 59/38 comprising colour filters or colour changing media [CCM]

Abstract

An object is to improve reliability of a light-emitting device. A light-emitting device has a driver circuit portion including a transistor for a driver circuit and a pixel portion including a transistor for a pixel over one substrate. The transistor for the driver circuit and the transistor for the pixel are inverted staggered transistors each including an oxide semiconductor layer in contact with part of an oxide insulating layer. In the pixel portion, a color filter layer and a light-emitting element are provided over the oxide insulating layer. In the transistor for the driver circuit, a conductive layer overlapping with a gate electrode layer and the oxide semiconductor layer is provided over the oxide insulating layer. The gate electrode layer, a source electrode layer, and a drain electrode layer are formed using metal conductive films.

Claims

1. (canceled)

2. A semiconductor device comprising:

a transistor comprising;

a first gate electrode layer;

a first insulating layer over the first gate electrode layer;

an oxide semiconductor layer including a channel formation region over the first insulating layer;

a source electrode layer and a drain electrode layer over the oxide semiconductor layer;

a second insulating layer over the oxide semiconductor layer, the source electrode layer and the drain electrode layer; and

a second gate electrode layer over the second insulating layer, wherein the second gate electrode layer overlaps with the channel formation region; and

a connection terminal comprising;

a first conductive layer;

the first insulating layer including a first contact hole over the first conductive layer;

a second conductive layer over and in contact with the first conductive layer through the first contact hole;

the second insulating layer including a second contact hole over the second conductive layer; and

a third conductive layer over and in contact with the second conductive layer through the second contact hole,

wherein the first conductive layer is formed from a same layer as the first gate electrode layer,

wherein the second conductive layer is formed from a same layer as the source electrode layer and the drain electrode layer, and

wherein the third conductive layer is formed from a same layer as the second gate electrode layer.

3. The semiconductor device according to claim 2, wherein the first gate electrode layer is electrically connected to the second gate electrode layer.

4. The semiconductor device according to claim 2, wherein the transistor is included in a driver circuit portion.

5. The semiconductor device according to claim 2, wherein the oxide semiconductor layer comprises indium, gallium, and zinc.

6. The semiconductor device according to claim 2, wherein the second insulating layer comprises stacked layers selected from a silicon oxide film, a silicon oxynitride film, a silicon nitride film, a silicon nitride oxide film, an aluminum oxide film, and an aluminum oxynitride film.

7. A light emitting device comprising:

a transistor comprising;

a first gate electrode layer;

a first insulating layer over the first gate electrode layer;

an oxide semiconductor layer including a channel formation region over the first insulating layer;

a source electrode layer and a drain electrode layer over the oxide semiconductor layer;

a second insulating layer over the oxide semiconductor layer, the source electrode layer and the drain electrode layer; and

a second gate electrode layer over the second insulating layer, wherein the second gate electrode layer overlaps with the channel formation region;

a connection terminal comprising;

a first conductive layer;

the first insulating layer including a first contact hole over the first conductive layer;

a second conductive layer over and in contact with the first conductive layer through the first contact hole;

the second insulating layer including a second contact hole over the second conductive layer; and

a third conductive layer over and in contact with the second conductive layer through the second contact hole; and

a light emitting portion comprising;

a color filter layer; and

a light emitting element over the color filter layer,

wherein the first conductive layer is formed from a same layer as the first gate electrode layer,

wherein the second conductive layer is formed from a same layer as the source electrode layer and the drain electrode layer, and

wherein the third conductive layer is formed from a same layer as the second gate electrode layer.

8. The light emitting device according to claim 7, wherein the first gate electrode layer is electrically connected to the second gate electrode layer.

9. The light emitting device according to claim 7, wherein the transistor is included in a driver circuit portion.

10. The light emitting device according to claim 7, wherein the oxide semiconductor layer comprises indium, gallium, and zinc.

11. The light emitting device according to claim 7, wherein the second insulating layer comprises stacked layers selected from a silicon oxide film, a silicon oxynitride film, a silicon nitride film, a silicon nitride oxide film, an aluminum oxide film, and an aluminum oxynitride film.

12. The light emitting device according to claim 7, wherein emission color of the light emitting element is white.

13. The light emitting device according to claim 7,

wherein the light emitting element comprises a first light emitting unit and a second light emitting unit, and

wherein a charge generation layer is formed between the first light emitting unit and the second light emitting unit.