SEMICONDUCTOR DEVICE AND PRODUCTION METHOD THEREOF

• US 20130306985A1
• Filed: 12/03/2012
• Published: 11/21/2013
• Est. Priority Date: 05/17/2012
• Status: Active Grant

• Current Assignee: New Japan Radio Company Limited (Nisshinbo Holdings Incorporated)
• Original Assignee: New Japan Radio Company Limited (Nisshinbo Holdings Incorporated)
• Inventors: FUJII, Yoshio
• Granted Patent: US 9,245,954 B2
• Time in Patent Office: Days
• US Class Current: 257/77
• CPC Class Codes: H01L 21/02697 Forming conducting materials on a substrate
• CPC Class Codes: H01L 2224/02166 Collar structures
• CPC Class Codes: H01L 2224/04042 Bonding areas specifically adapted for wire connectors, e.g. wirebond pads
• CPC Class Codes: H01L 2224/05624 Aluminium [Al] as principal constituent
• CPC Class Codes: H01L 2224/32245 the item being metallic
• CPC Class Codes: H01L 2224/45015 being circular
• CPC Class Codes: H01L 2224/45124 Aluminium (Al) as principal constituent
• CPC Class Codes: H01L 2224/45147 Copper (Cu) as principal constituent
• CPC Class Codes: H01L 2224/48247 connecting the wire to a bond pad of the item
• CPC Class Codes: H01L 2224/48458 of the interface with the bonding area
• CPC Class Codes: H01L 2224/4847 the connecting portion on the bonding area of the semiconductor or solid-state body being a wedge bond
• CPC Class Codes: H01L 2224/48472 the other connecting portion not on the bonding area also being a wedge bond, i.e. wedge-to-wedge
• CPC Class Codes: H01L 2224/48505 at the bonding interface
• CPC Class Codes: H01L 2224/48724 Aluminium (Al) as principal constituent
• CPC Class Codes: H01L 2224/48824 Aluminium (Al) as principal constituent
• CPC Class Codes: H01L 2224/73265 Layer and wire connectors
• CPC Class Codes: H01L 24/05 of an individual bonding area
• CPC Class Codes: H01L 24/45 of an individual wire connector
• CPC Class Codes: H01L 24/48 of an individual wire connector
• CPC Class Codes: H01L 29/1608 Silicon carbide
• CPC Class Codes: H01L 2924/00 : Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/00012 : Relevant to the scope of the group, the symbol of which is combined with the symbol of this group
• CPC Class Codes: H01L 2924/00014 : the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
• CPC Class Codes: H01L 2924/00015 : the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed as prior art
• CPC Class Codes: H01L 2924/10272 : Silicon Carbide [SiC]
• CPC Class Codes: H01L 2924/181 : Encapsulation
• CPC Class Codes: H01L 2924/20757 : larger or equal to 70 microns less than 80 microns

Abstract

An aluminum material can be used on a surface of the electrode of a semiconductor element, this aluminum layer need not be formed thick unnecessarily, a copper wire is bonded strongly to the semiconductor element irrespective of a diameter of the wire, and high heat resistance can be achieved. Silicon carbide (SiC) is used as a substrate of the semiconductor element 10, the titanium layer 20 and the aluminum layer 21 are formed as the electrode 15 on the silicon carbide substrate, and by a ball bonding or a wedge bonding of the copper wire 16 to the aluminum layer 21 of the electrode 15 while applying ultrasonic wave, the copper-aluminum compound layer 23 (Al₄Cu₉, AlCu or the like) is formed between the copper wire 16 and the titanium layer 20.

Claims

1. A semiconductor device having an aluminum layer formed on a surface of an electrode of a semiconductor element and a copper wire connected to the electrode by wire bonding, wherein a compound comprising copper and aluminum is formed between the copper wire and a metal layer which is provided under the aluminum layer of the electrode.

2. The semiconductor device of claim 1, wherein the compound comprises at least one selected from the group consisting of Al₂Cu₃, Al₄Cu₉, AlCu₃ and AlCu₄.

3. The semiconductor device of claim 1, wherein titanium is used as the metal layer under the aluminum layer of the electrode.

4. The semiconductor device of claim 1, wherein silicon carbide is used as a substrate of the semiconductor element.

5. A method for producing a semiconductor device having an aluminum layer formed on a surface of an electrode of a semiconductor element and a copper wire connected to the electrode by wire bonding, comprising:

forming the aluminum layer on a surface of the electrode of the semiconductor element, and

connecting the copper wire to the electrode by bonding the copper wire on the aluminum layer of the electrode while applying ultrasonic vibration, whereby a compound comprising copper and aluminum is formed between the copper wire and a metal layer which is a layer provided under the aluminum layer of the electrode.