Magnetoresistive random access memory cell design

• US 20130307097A1
• Filed: 05/15/2012
• Published: 11/21/2013
• Est. Priority Date: 05/15/2012
• Status: Abandoned Application

• Current Assignee: Dujiang Wan, Ge Yi, Shaoping Li, Yunjun Tang, Zongrong Liu
• Original Assignee: Yunjun Tang
• Inventors: Yi, Ge, Li, Shaoping, Tang, Yunjun, Liu, Zongrong, Wan, Dujiang
• Application Number:
  US13/472,085
• Publication Number:
  US 20130307097A1
• Time in Patent Office: Days
• US Class Current: 257/421
• CPC Class Codes: H10N 50/10 Magnetoresistive devices

Abstract

A magnetic memory cell comprises in-plane anisotropy tunneling magnetic junction (TMJ) and two fixed in-plane storage-stabilized layers, which splits on the both side of the data storage layer of the TMJ. The magnetizations of the said fixed in-plane storage-stabilized layers are all normal to that of the reference layer of TMJ but point to opposite direction. The existing of the storage-stabilized layers not only enhances the stability of the data storage, but also can reduce the critical current needed to flip the data storage layer via some specially added features.

Claims

1. A magnetic memory device, comprising:

a magnetic tunneling junction (MTJ), which comprises a fixed magnetic reference layer with in-plane-anisotropy;

an in-plane-anisotropy magnetic data storage layer, whose magnetization can rotate, and a dielectric tunneling barrier;

a fixed in-plane-anisotropy magnetic layer 1 magnetically separated away from the data storage layer of MTJ and locates on one side of said data storage layer. The magnetization of the layer 1 is normal to the magnetization of the reference layer of MTJ;

a fixed in-plane-anisotropy magnetic layer 2 magnetically separated away from said storage layer of MTJ and locates on the other side of said data storage layer. The magnetization of the layer 2 is also normal to the magnetization of said reference layer of MTJ and is opposite to the magnetization of said layer 1;

Said layer 1 and said layer 2 assist to stabilize said data storage layer of MTJ.

2. The magnetic memory device of claim 1, wherein said reference layer comprises a balanced or closely balanced synthetic antiferromagnetic layers.

3. The magnetic memory device of claim 1, wherein the coercivity of said layer 1 and said layer 2 should be distinctively different and have predetermined large separation so that the magnetization of said layer and said layer 2 can be set by external magnetic field independently.

4. The magnetic memory device of claim 1, wherein either said layer 1 or said layer 2 is separated away from said data storage layer only by a single non-magnetic metallic layer, whose spin diffusion length is relatively long, for example, Cu, Ag, Al, Au or their combinations.

5. The magnetic memory device of claim 4, wherein said layer 1 and said layer 2, can be made of hard magnetic layer such as CoPt, CoCr or the combination of hard magnetic layer and high moment soft magnetic layer, which locates adjacent to the non-magnetic metallic layer and have capability of high spin polarization, for example CoPt/CoFe, CoCrPt/Co Fe.

6. The magnetic memory device of claim 4, wherein the magnitude of the magnetic moment of said layer 1, said layer 2 and said data storage layer prefer to be the same or very close.

7. The magnetic memory device of claim 1, wherein the layer among said layer 1 and said layer 2, which locates on the same side as said data storage layer relative to said dielectric tunneling barrier, can be separated away from said data storage layer by a space layer, a fixed magnetic layer over the space layer and a metallic spacer.

8. The magnetic memory device of claim 7, wherein said space layer is adjacent to said data storage layer and can be made of MgO, TiOx, AIOx or CrOx or combination of dielectric with metal such as Cu, Al, Ag such as MgO/Cu, with product of resistance and area (RA) being significant lower than that of said dielectric tunneling barrier.

9. The magnetic memory device of claim 7, wherein said metallic spacer separates said fixed magnetic layer over said space layer from said layer among said layer 1 and said layer 2.

10. The magnetic memory device of claim 7, wherein said metallic spacer can be made of heavy metal layer with short spin diffusion length such as Ta.

11. The magnetic memory device of claim 7, wherein said fixed magnetic layer over said space layer can be made of the combination of hard magnetic layer and high moment soft magnetic layer such as CoPt/CoFe, CoCrPt/CoFe, CoCr/CoFe, whose magnetization is opposite to that of said layer among said layer 1 and said layer 2.

12. The magnetic memory device of claim 7, wherein the coercivity of said fixed magnetic layer over said space layer should be distinctively different and have pre-determined large separation from that of said layer among said layer 1 and said layer 2.

13. The magnetic memory device of claim 1, wherein the layer among said layer 1 and said layer 2, which locates on the same side as said data storage layer relative to said dielectric tunneling barrier, can be separated away from said data storage layer by a space layer, a fixed synthetic antiferromagnetic layer over the space layer and a metallic spacer.

14. The magnetic memory device of claim 13, wherein said space layer is adjacent to said data storage layer and can be made of MgO, TiOx, AIOx or CrOx or combination of dielectric with metal such as Cu, Al, Ag such as MgO/Cu, with product of resistance and area (RA) being significant lower than that of said dielectric tunneling barrier.

15. The magnetic memory device of claim 13, wherein said metallic spacer separates said fixed synthetic antiferromagnetic layer over the space layer from said layer among said layer 1 and said layer 2.

16. The magnetic memory device of claim 13, wherein said metallic spacer can be made of heavy metal layer with short spin diffusion length such as Ta.

17. The magnetic memory device of claim 13, wherein said fixed synthetic antiferromagnetic layer over said space layer is made of a metal layer sandwiched between two moment balanced or closely balanced magnetic layers, whose magnetization are normal to that of said reference layer of MTJ.

18. The magnetic memory device of claim 17, wherein said metal layer can introduce RKKY coupling between the magnetic layers on both sides.

19. The magnetic memory device of claim 17, wherein one of the magnetic layers comprises hard magnetic layer such as CoCrPt, CoCr or CrPt.

20. The magnetic memory device of claim 17, wherein an example of said fixed synthetic antiferromagnetic layer over said space layer can be CoFe/Ru/CoFe/CoPt.

21. The magnetic memory device of claim 17, one of the magnetic layer of said fixed synthetic antiferromagnetic layer is adjacent to an antiferromagnetic layer such as IrMn and its magnetization is pinned by said antiferromagnetic layer.