Hall Effect Device

• US 20130307609A1
• Filed: 05/15/2012
• Published: 11/21/2013
• Est. Priority Date: 05/15/2012
• Status: Active Grant

• Current Assignee: Infineon Technologies AG
• Original Assignee: Infineon Technologies AG
• Inventors: Ausserlechner, Udo
• Granted Patent: US 9,484,525 B2
• Time in Patent Office: Days
• US Class Current: 327/511
• CPC Class Codes: G01R 33/07 Hall effect devices
• CPC Class Codes: H03K 17/90 by the use, as active elements, of galvano-magnetic devices, e.g. Hall-effect devices H03K17/95, H03K17/97 take precedence
• CPC Class Codes: H10N 52/01 Manufacture or treatment
• CPC Class Codes: H10N 52/101 Semiconductor Hall-effect devices
• CPC Class Codes: H10N 52/80 Constructional details

Abstract

Embodiments of the present invention provide a Hall effect device that includes a Hall effect region of a first semiconductive type, at least three contacts and a lateral conductive structure. The Hall effect region is formed in or on top of a substrate, wherein the substrate includes an isolation arrangement to isolate the Hall effect region in a lateral direction and in a depth direction from the substrate or other electronic devices in the substrate. The at least three contacts are arranged at a top of the Hall effect region to supply the Hall effect device with electric energy and to provide a Hall effect signal indicative of the magnetic field, wherein the Hall effect signal is generated in a portion of the Hall effect region defined by the at least three contacts. The lateral conductive structure is located between the Hall effect region and the isolation arrangement.

Claims

1. A Hall effect device indicative of a magnetic field, wherein the Hall effect device comprises:

a Hall effect region of a first semiconductive type formed in or on top of a substrate, wherein the substrate comprises an isolation arrangement to isolate the Hall effect region in a lateral direction and in a depth direction from the substrate or other electronic devices in the substrate;

at least three contacts arranged at a top of the Hall effect region to supply the Hall effect device with electric energy and to provide a Hall effect signal indicative of the magnetic field, wherein the Hall effect signal is generated in a portion of the Hall effect region defined by the at least three contacts; and

a lateral conductive structure of the first semiconductive type located between the Hall effect region and the isolation arrangement, wherein a doping concentration of the lateral conductive structure is higher than a doping concentration of the Hall effect region.

2. The Hall effect device according to claim 1, wherein the Hall effect device comprises a buried layer of the first semiconductive type formed in the substrate at a bottom of the Hall effect region, wherein a doping concentration of the buried layer is higher than a doping concentration of the Hall effect region.

3. The Hall effect device according to claim 1, wherein the lateral conductive structure is formed in the Hall effect region from the top of the Hall effect region in the depth direction towards a bottom of the Hall effect region.

4. The Hall effect device according to claim 1, wherein an electric conductivity of the lateral conductive structure is at least by a factor of 10 higher than an electric conductivity of the Hall effect region.

5. The Hall effect device according to claim 1, wherein the Hall effect device comprises a top plate arranged adjacent to the top of the Hall effect region and a dielectric top plate isolation arranged between the top plate and the top of the Hall effect region to isolate the top plate from the Hall effect region.

6. The Hall effect device according to claim 5, wherein the top plate comprises poly-silicon or metal.

7. The Hall effect device according to claim 5, wherein the dielectric top plate isolation comprises field oxide.

8. The Hall effect device according to claim 5, wherein a product of a relative permittivity of the dielectric top plate isolation and a thickness of the dielectric top plate isolation is equal to or greater than 1 μ

m.

9. The Hall effect device according to claim 1, wherein the isolation arrangement comprises an isolation region and a dielectric layer arranged between the isolation region and the Hall effect region, wherein the isolation arrangement is adapted to provide in an operation mode a homogenous potential over the isolation region.

10. The Hall effect device according to claim 1, wherein the substrate is of a second semiconductive type, wherein the isolation arrangement is adapted to provide in an operation mode a reverse biased semiconductor junction between the Hall effect region and the substrate.

11. The Hall effect device according to claim 1, wherein the Hall effect region comprises a doping concentration of at least 10̂

15/cm³.

15. The Hall effect device according to claim 11, wherein the Hall effect device comprises a top plate arranged adjacent to the top of the Hall effect region and a dielectric top plate isolation arranged between the top plate and the top of the Hall effect region to isolate the top plate from the Hall effect region.

12. A Hall effect device indicative of a magnetic field, wherein the Hall effect device comprises:

a Hall effect region of a first semiconductive type formed in or on top of a substrate, wherein the substrate comprises an isolation arrangement to isolate the Hall effect region in a lateral direction and in a depth direction from the substrate or other electronic devices in the substrate;

at least three contacts arranged at a top of the Hall effect region to supply the Hall effect device with electric energy and to provide a Hall effect signal indicative of the magnetic field, wherein the Hall effect signal is generated in a portion of the Hall effect region defined by the at least three contacts; and

a lateral conductive structure of the first semiconductive type located between the Hall effect region and the isolation arrangement;

wherein the at least three contacts are arranged at the top of the Hall effect region such that a vertical distance between the isolation arrangement and each contact of the at least three contacts is equal to or greater than a lateral distance between each contact and its neighbor contact.

13. The Hall effect device according to claim 12, wherein the Hall effect device comprises a buried layer of the first semiconductive type formed in the substrate at a bottom of the Hall effect region, wherein a doping concentration of the buried layer is higher than a doping concentration of the Hall effect region.

14. The Hall effect device according to claim 12, wherein the lateral conductive structure is formed in the Hall effect region from the top of the Hall effect region in the depth direction towards the bottom of the Hall effect region.

16. A Hall effect device indicative of a magnetic field, wherein the Hall effect device comprises:

a Hall effect region of a first semiconductive type formed in or on top of a substrate, wherein the substrate comprises an isolation arrangement to isolate the Hall effect region in a lateral direction and in a depth direction from the substrate or other electronic devices in the substrate;

at least three contacts arranged at a top of the Hall effect region to supply the Hall effect device with electric energy and to provide a Hall effect signal indicative of the magnetic field, wherein the Hall effect signal is generated in a portion of the Hall effect region defined by the at least three contacts; and

a buried layer of the first semiconductive type formed in the substrate at a bottom of the Hall effect region, wherein a doping concentration of the buried layer is higher than a doping concentration of the Hall effect region;

wherein the at least three contacts are arranged at the top of the Hall effect region such that a lateral distance between the isolation arrangement and each contact of the at least three contacts is equal to or greater than a lateral distance between each contact and its neighbor contact.

17. The Hall effect device according to claim 16, wherein the Hall effect device comprises a lateral conductive structure of the first semiconductive type located between the Hall effect region and the isolation arrangement.

18. The Hall effect device according to claim 16, wherein the lateral conductive structure is formed in the Hall effect region from the top of the Hall effect region in the depth direction towards the bottom of the Hall effect region.

19. The Hall effect device according to claim 16, wherein the Hall effect device comprises a top plate arranged adjacent to the top of the Hall effect region and a dielectric top plate isolation arranged between the top plate and the top of the Hall effect region to isolate the top plate from the Hall effect region.

20. A Method for manufacturing a Hall effect device indicative of a magnetic field, wherein the method comprises:

providing a Hall effect region of a first semiconductive type formed in or on top of a substrate, wherein the substrate comprises an isolation arrangement to isolate the Hall effect region in lateral direction and in a depth direction from the substrate or other electronic devices in the substrate;

providing at least three contacts arranged at a top of the Hall effect region to supply the Hall effect device with electric energy and to provide a Hall effect signal indicative of the magnetic field, wherein the Hall effect signal is generated in a portion of the Hall effect region defined by the at least three contacts; and

providing a lateral conductive structure of the first semiconductive type located between the Hall effect region and the isolation arrangement.

21. A Method for manufacturing a Hall effect device indicative of a magnetic field, wherein the method comprises:

providing a Hall effect region of a first semiconductive type formed in or on top of a substrate, wherein the substrate comprises an isolation arrangement to isolate the Hall effect region in lateral direction and in a depth direction from the substrate or other electronic devices in the substrate;

providing at least three contacts arranged at a top of the Hall effect region to supply the Hall effect device with electric energy and to provide a Hall effect signal indicative of the magnetic field, wherein the Hall effect signal is generated in a portion of the Hall effect region defined by the at least three contacts; and

providing a lateral conductive structure of the first semiconductive type located between the Hall effect region and the isolation arrangement, wherein a doping concentration of the lateral conductive structure is higher than a doping concentration of the Hall effect region;

wherein the at least three contacts are arranged at the top of the Hall effect region such that a vertical distance between the isolation arrangement and each contact of the at least three contacts is equal to or greater than a lateral distance between each contact and its neighbor contact.

22. A Method for manufacturing a Hall effect device indicative of a magnetic field, wherein the method comprises:

providing a Hall effect region of a first semiconductive type formed in or on top of a substrate, wherein the substrate comprises an isolation arrangement to isolate the Hall effect region in lateral direction and in a depth direction from the substrate or other electronic devices in the substrate;

providing at least three contacts arranged at a top of the Hall effect region to supply the Hall effect device with electric energy and to provide a Hall effect signal indicative of the magnetic field, wherein the Hall effect signal is generated in a portion of the Hall effect region defined by the at least three contacts; and

providing a buried layer of the first semiconductive type formed in the substrate at a bottom of the Hall effect region, wherein a doping concentration of the buried layer is higher than a doping concentration of the Hall effect region;

wherein the at least three contacts are arranged at the top of the Hall effect region such that a lateral distance between the isolation arrangement and each contact of the at least three contacts is equal to or greater than a lateral distance between each contact and its neighbor contact.

23. A Method for operating a Hall effect device indicative of a magnetic field, wherein the Hall effect device comprises a Hall effect region of a first semiconductive type formed in or on top of a substrate, wherein the substrate comprises an isolation arrangement to isolate the Hall effect region in a lateral direction and in a depth direction from the substrate or other electronic devices in the substrate;

at least three contacts arranged at a top of the Hall effect region to supply the Hall effect device with electric energy and to provide a Hall effect signal indicative of the magnetic field, wherein the Hall effect signal is generated in a portion of the Hall effect region defined by the at least three contacts; and

a lateral conductive structure located between the Hall effect region and the isolation arrangement;

wherein the method comprises;

applying the electric energy to a first contact of the at least three contacts and a third contact of the at least three contacts, and providing the Hall effect signal with a second contact of the at least three contacts and the third contact in a first phase;

applying the electric energy to the second contact and the third contact, and providing the Hall effect signal with the first contact and the third contact in a second phase; and

combining the Hall effect signal of the first phase and the Hall effect signal of the second phase in order to obtain an output signal indicative of the magnetic field.

24. A Method for operating a Hall effect device indicative of a magnetic field, wherein the Hall effect device comprises a Hall effect region of a first semiconductive type formed in or on top of a substrate, wherein the substrate comprises an isolation arrangement to isolate the Hall effect region in a lateral direction and in a depth direction from the substrate or other electronic devices in the substrate;

at least three contacts arranged at a top of the Hall effect region to supply the Hall effect device with electric energy and to provide a Hall effect signal indicative of the magnetic field, wherein the Hall effect signal is generated in a portion of the Hall effect region defined by the at least three contacts; and

a lateral conductive structure of the first semiconductive type located between the Hall effect region and the isolation arrangement, wherein a doping concentration of the lateral conductive structure is higher than a doping concentration of the Hall effect region;

wherein the at least three contacts are arranged at the top of the Hall effect region such that a vertical distance between the isolation arrangement and each contact of the at least three contacts is equal to or greater than a lateral distance between each contact and its neighbor contact;

wherein the method comprises;

applying the electric energy to a first contact of the at least three contacts and a third contact of the at least three contacts, and providing the Hall effect signal with a second contact of the at least three contacts and the third contact in a first phase;

applying the electric energy to the second contact and the third contact, and providing the Hall effect signal with the first contact and the third contact in a second phase; and

combining the Hall effect signal of the first phase and the Hall effect signal of the second phase in order to obtain an output signal indicative of the magnetic field.

25. A Method for operating a Hall effect device indicative of a magnetic field, wherein the Hall effect device comprises a Hall effect region of a first semiconductive type formed in or on top of a substrate, wherein the substrate comprises an isolation arrangement to isolate the Hall effect region in a lateral direction and in a depth direction from the substrate or other electronic devices in the substrate;

at least three contacts arranged at a top of the Hall effect region to supply the Hall effect device with electric energy and to provide a Hall effect signal indicative of the magnetic field, wherein the Hall effect signal is generated in a portion of the Hall effect region defined by the at least three contacts; and

a buried layer of the first semiconductive type formed in the substrate at a bottom of the Hall effect region, wherein a doping concentration of the buried layer is higher than a doping concentration of the Hall effect region;

wherein the at least three contacts are arranged at the top of the Hall effect region such that a lateral distance between the isolation arrangement and each contact of the at least three contacts is equal to or greater than a lateral distance between each contact and its neighbor contact;

wherein the method comprises;

applying the electric energy to a first contact of the at least three contacts and a third contact of the at least three contacts, and providing the Hall effect signal with a second contact of the at least three contacts and the third contact in a first phase;

applying the electric energy to the second contact and the third contact, and providing the Hall effect signal with the first contact and the third contact in a second phase;

combining the Hall effect signal of the first phase and the Hall effect signal of the second phase in order to obtain an output signal indicative of the magnetic field.