METHOD AND APPARATUS FOR PROGRAMMING DATA IN NON-VOLATILE MEMORY DEVICE

• US 20130308390A1
• Filed: 05/15/2013
• Published: 11/21/2013
• Est. Priority Date: 05/15/2012
• Status: Active Grant

• Current Assignee: Samsung Electronics Co. Ltd.
• Original Assignee: Samsung Electronics Co. Ltd.
• Inventors: Lee, Jun-Woo
• Granted Patent: US 9,159,405 B2
• Time in Patent Office: Days
• US Class Current: 365/185.22
• CPC Class Codes: G11C 11/5621 using charge storage in a floating gate
• CPC Class Codes: G11C 11/5628 Programming or writing circuits; Data input circuits
• CPC Class Codes: G11C 16/10 Programming or data input circuits
• CPC Class Codes: G11C 16/3481 Circuits or methods to verify correct programming of nonvolatile memory cells whilst programming is in progress, e.g. by detecting onset or cessation of current flow in cells and using the detector output to terminate programming

Abstract

A method and an apparatus for programming data, and a method and an apparatus for setting a data programming mode used for the same are provided. The method for programming data in a non-volatile memory device includes determining a programming mode to be used for data programming among at least two programming modes prescribing different verify voltages for cells to be programmed, based on set mode information, and programming data according to the determined programming mode. Consequently, the loss of programmed data is prevented through an SMD reflow process.

Claims

1. A method for programming data in a non-volatile memory device, the method comprising:

determining a programming mode to be used for data programming among at least two programming modes prescribing different verify voltages for cells to be programmed, based on set mode information; and

programming data into the cells according to the determined programming mode.

2. The method as claimed in claim 1, wherein the programming modes comprises:

a first programming mode with a first verify voltage; and

a second programming mode with a second verify voltage higher by a set value than the first verify voltage.

3. The method as claimed in claim 2, wherein the set value corresponds to an amount of a measured change in a threshold voltage during a surface mount device reflow process which is to be performed after the programming of data by using the second programming mode.

4. The method as claimed in claim 3, wherein the amount of the change corresponds to an amount of a change in a threshold voltage of the cells to be programmed under time and temperature conditions which are set.

5. The method as claimed in claim 1, wherein the mode information comprises:

information used to determine a programming mode; and

verify voltages matched to each programming mode.

6. A method for setting a data programming mode for a non-volatile memory device, the method comprising:

setting at least two programming modes prescribing different verify voltages for cells to be programmed; and

storing mode information on each of the at least two set programming modes in the non-volatile memory device.

7. The method as claimed in claim 6, wherein the programming modes comprises:

a first programming mode with a first verify voltage; and

a second programming mode prescribing a second verify voltage higher by a set value than the first verify voltage.

8. The method as claimed in claim 7, wherein the set value corresponds to an amount of a measured change in a threshold voltage during a surface mount device reflow process which is to be performed after programming data by using the second programming mode.

9. The method as claimed in claim 8, wherein the amount of the change corresponds to an amount of a change in a threshold voltage of the cells to be programmed under time and temperature conditions that are set.

10. The method as claimed in claim 6, wherein the mode information comprises:

information used to determine a programming mode; and

verify voltages matched to each programming mode.

11. An apparatus for programming data in a non-volatile memory device, the apparatus comprising:

a controller configured to determine a programming mode to be used for data programming among at least two programming modes prescribing different verify voltages for cells be programmed, based on set mode information, and to generate a control signal according to the determined programming mode; and

a voltage generator configured to apply a programming voltage to at least one cell based on the control signal received from the controller.

12. The apparatus as claimed in claim 11, wherein the programming modes comprise:

a first programming mode with a first verify voltage; and

a second programming mode prescribing a second verify voltage higher by a set value than the verify voltage.

13. The apparatus as claimed in claim 12, wherein the set value corresponds to an amount of a measured change in a threshold voltage during a surface mount device reflow process which is to be performed after programming data by using the second programming mode.

14. The apparatus as claimed in claim 13, wherein the amount of the change corresponds to an amount of a change in a threshold voltage of the cells to be programmed under time and temperature conditions which are set.

15. The apparatus as claimed in claim 11, wherein the mode information comprises:

information used to determine a programming mode; and

a verify voltage matched to each programming mode.

16. An apparatus for setting a data programming mode for a non-volatile memory device, the apparatus comprising:

a mode setter configured to set at least two programming modes prescribing different verify voltages for cells to be programmed, and to store mode information on each of the at least two set programming modes in the non-volatile memory device.

17. The apparatus as claimed in claim 16, wherein the programming modes comprise:

a first programming mode with a first verify voltage; and

a second programming mode prescribing a second verify voltage higher by a set value than the first verify voltage.

18. The apparatus as claimed in claim 17, further comprising a verify voltage determiner configured to measure an amount of a change in a threshold voltage during a surface mount device reflow process which is to be performed after programming data by using the second programming mode, and to determine the second verify voltage obtained by compensating for the measured amount of the change.

19. The apparatus as claimed in claim 18, wherein the verify voltage determiner is configured to measure an amount of a change in a threshold voltage of the cells to be programmed under time and temperature conditions which are set.

20. The apparatus as claimed in claim 17, wherein the mode information comprises:

information used to determine a programming mode; and

verify voltages matched to each programming mode.

21. A method for setting a data programming mode for a non-volatile memory device, the method comprising:

setting a default mode to a second programming mode in the non-volatile memory device storing information on a first programming mode prescribing a first verify voltage for cells to be programmed, the second programming mode prescribing a second verify voltage higher by a set value than the first verify voltage; and

transmitting data to the non-volatile memory device.

22. The method as claimed in claim 21, wherein the set value corresponds to a value obtained by measuring a change in a threshold voltage during a surface mount device reflow process which is to be performed after programming data by using the second programming mode.

23. The method as claimed in claim 21, further comprising setting a default mode to the first programming mode in the non-volatile memory device when programming data by using the second programming mode is completed.

24. An apparatus for setting a data programming mode for a non-volatile memory device, the apparatus comprising:

a mode setter configured to set a default mode to a second programming mode in the non-volatile memory device storing information on a first programming mode prescribing first verify voltage for cells to be programmed, and the second programming mode prescribing a second verify voltage higher by a set value than the first verify voltage; and

a data input unit configured to transmit data to the non-volatile memory device.

25. The apparatus as claimed in claim 24, wherein the set value corresponds to a measured change in a threshold voltage during a surface mount device reflow process which is to be performed after programming data by using the second programming mode.

26. The apparatus as claimed in claim 24, wherein the mode setter sets a default mode to the first programming mode in the non-volatile memory device when programming data by using the second programming mode is completed.