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SOLID-STATE IMAGING ELEMENT, METHOD OF DRIVING SOLID-STATE IMAGING ELEMENT, AND IMAGING DEVICE

  • US 20130313410A1
  • Filed: 07/19/2013
  • Published: 11/28/2013
  • Est. Priority Date: 01/20/2011
  • Status: Abandoned Application
First Claim
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1. A solid-state imaging element that has a photoelectric converting layer that is formed above a semiconductor substrate and made of an organic material, and an MOS type signal readout circuit that is formed on the semiconductor substrate and reads out signals according to electric charge generated in the photoelectric converting layer,wherein the signal readout circuit includes a first electric charge storage unit that stores electric charge generated in the photoelectric converting layer, a second electric charge storage unit to which the electric charge stored in the first electric charge storage unit is transferred, a transfer transistor that transfers the electric charge stored in the first electric charge storage unit to the second electric charge storage unit, a reset transistor that resets a potential of the second electric charge storage unit, and an output transistor that outputs a signal according to the potential of the second electric charge storage unit, andwherein the solid-state imaging element comprises:

  • a control unit that performs, in each frame, driving to inject electric charge into the first electric charge storage unit from a semiconductor region by changing a potential of the semiconductor region in which a power source of the reset transistor is connected from a deep state to a shallow state, and to discharge the electric charge that has been injected into the first electric charge storage unit to the semiconductor region by changing, from this state, the potential of the semiconductor region from the shallow state to a deep state.

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