SEMICONDUCTOR DEVICE

• US 20130313446A1
• Filed: 04/11/2013
• Published: 11/28/2013
• Est. Priority Date: 05/22/2012
• Status: Active Grant

• Current Assignee: Renesas Electronics Corporation
• Original Assignee: Renesas Electronics Corporation
• Inventors: YAMAZAKI, Hiroaki
• Granted Patent: US 9,363,023 B2
• Time in Patent Office: Days
• US Class Current: 250/551
• CPC Class Codes: H01L 2224/05554 being square
• CPC Class Codes: H01L 2224/48091 Arched
• CPC Class Codes: H01L 2224/48137 the bodies being arranged next to each other, e.g. on a common substrate
• CPC Class Codes: H01L 2224/48247 connecting the wire to a bond pad of the item
• CPC Class Codes: H01L 2924/00012 Relevant to the scope of the group, the symbol of which is combined with the symbol of this group
• CPC Class Codes: H01L 2924/00014 the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
• CPC Class Codes: H01L 2924/181 Encapsulation
• CPC Class Codes: H01L 31/02016 Circuit arrangements of general character for the devices
• CPC Class Codes: H04B 10/802 for isolation, e.g. using optocouplers

Abstract

A semiconductor device including: a filter circuit to subdivide and output the received signal as a first signal with a relatively low frequency and a second signal with a relatively high frequency; a first channel containing a photocoupler to convey the first signal output from the filter circuit; a second channel containing an isolator to convey the second signal from the filter circuit; and a signal synthesis circuit to sum and output the first signal conveyed by way of a first channel and a second signal conveyed by way of a second channel.

Claims

1. A semiconductor device comprising:

a filter circuit to sub-divide and output a received signal as a relatively low frequency first signal and a relatively high frequency second signal;

a first channel containing a photocoupler to convey the first signal output from the filter circuit;

a second channel containing an isolator to convey the second signal output from the filter circuit; and

a signal synthesis circuit to sum and output the first signal conveyed by way of a first channel and a second signal conveyed by way of a second channel.

2. The semiconductor device according to claim 1,

wherein the isolator mounted in the second channel is a capacitive coupling type isolator.

3. The semiconductor device according to claim 2,

wherein the photocoupler mounted in the first channel contains a light emitting diode to emit light according to a first signal, and a photodiode to receive light from the light emitting diode, and

wherein the isolator mounted in the second channel contains a capacitor.

4. The semiconductor device according to claim 3, comprising:

a first semiconductor chip including the filter circuit;

a second semiconductor chip including the light emitting diode; and

a third semiconductor chip including the photodiode, the capacitor, and the signal synthesis circuit.

5. The semiconductor device according to claim 4,

wherein the photodiode and the capacitor are formed over a single substrate in the third semiconductor chip.

6. The semiconductor device according to claim 5,

wherein the photodiode, the capacitor, and the signal synthesis circuit are formed over a single substrate in the third semiconductor chip.

7. The semiconductor device according to claim 1,

wherein the isolator mounted in the second channel is an inductive coupling type isolator.

8. A semiconductor device comprising:

a first filter circuit to sub-divide and output a signal received from a first input terminal into a relatively low frequency first signal and a relatively high frequency second signal;

a second filter circuit to sub-divide and output a signal received from a second input terminal into a relatively low frequency third signal and a relatively high frequency fourth signal;

a first channel including a first photocoupler to convey a first signal output from the first filter circuit;

a second channel including a first isolator to convey a second signal output from the first filter circuit;

a third channel including a second photocoupler to convey a third signal output from the second filter circuit;

a fourth channel including a second isolator to convey a fourth signal output from the second filter circuit;

a first signal synthesis circuit to sum and output the first signal conveyed by way of the first channel and a second signal conveyed by way of the second channel; and

a second signal synthesis circuit to sum and output the third signal conveyed by way of a third channel and the fourth signal conveyed by way of the fourth channel.

9. The semiconductor device according to claim 8,

wherein a first photocoupler mounted in the first channel includes a first light emitting diode to emit light according to a first signal, and a first photodiode to receive the light from the first light emitting diode,

wherein a first isolator mounted in the second channel includes a first capacitor,

wherein a third photocoupler mounted in a third channel includes a second light emitting diode to emit light according to the third signal, and a second photodiode to receive the light of the second light emitting diode, and

wherein a second isolator mounted in the fourth channel includes a second capacitor.

10. The semiconductor device according to claim 9, comprising:

a first semiconductor chip including the first filter circuit, the second signal synthesis circuit, the second photodiode, and the second capacitor;

a second semiconductor chip including the first light emitting diode;

a third semiconductor chip including the second filter circuit, the first signal synthesis circuit, a first photodiode, and the first capacitor; and

a fourth semiconductor chip including a second light emitting diode.

11. The semiconductor device according to claim 10,

wherein the second photodiode and the second capacitor are formed over a single substrate in the first semiconductor chip, and

wherein the first photodiode and the first capacitor are formed over a single substrate in the third semiconductor chip.

12. The semiconductor device according to claim 11,

wherein the first filter circuit, the second signal synthesis circuit, the second photodiode, and the second capacitor are formed over a single substrate in the first semiconductor chip, and

wherein the second filter circuit, the first signal synthesis circuit, the first photodiode, and the first capacitor are formed over a single substrate in the third semiconductor chip.

13. The semiconductor device according to claim 8,

wherein the first isolator mounted in the second channel, and the second isolator mounted in the fourth channel, are a capacitive coupling type isolator or an inductive coupling type isolator.